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| PTF 10112 60 Watts, 1.8-2.0 GHz GOLDMOSTM Field Effect Transistor Description The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * * * * * * INTERNALLY MATCHED Guaranteed Performance at 1.93, 1.99 GHz, 28 V - Output Power = 60 Watts Min - Power Gain = 12 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 80 Output Power (Watts) 60 A-12 40 1011 3456 2 98 37 VCC = 28 V 20 IDQ = 580 mA f = 2000 MHz 0 1 2 3 4 5 6 0 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 15 W, IDQ = 580 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 580 mA, f = 1.99 GHz) Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.99 GHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gps P-1dB hD Y Min 11 60 -- -- Typ 12 -- 41 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10112 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 100 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 150 mA VDS = 10 V, ID = 2 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 4.0 Max -- 5.0 5.0 -- Units Volts mA Volts Siemens Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 237 1.35 -40 to +150 0.74 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Power (W) 13 70 Gain (dB) 60 50 Output Power & Efficiency 14 80 13 Gain (dB) 12 60 50 40 Gain (dB) Gain (dB) 12 11 10 11 IDQ = 580mA POUT = 20 W -10 20 -20 10 Return Loss (dB) VCC = 28 V IDQ = 580 mA Efficiency (%) 1950 10 40 30 2050 9 1750 1850 9 1930 1940 1950 1960 1970 1980 -30 0 1990 Frequency (MHz) Frequency (MHz) 2 Return Loss (dB) VDD = 28 V Efficiency (%) @P-1dB 0 30 Efficiency (%) Broadband Test Fixture Performance e Output Power vs. Supply Voltage 80 -15 PTF 10112 Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) VDD = 28 V Output Power (Watts) 70 -25 IDQ = 580 mA f1 = 1959 MHz f2 = 1960 MHz IM3 IMD (dBc) -35 -45 -55 -65 60 IM5 50 IDQ = 580 mA f = 2000 MHz 22 24 26 28 30 32 34 IM7 40 0 10 20 30 40 50 60 70 Supply Voltage (Volts) Output Power (Watts-PEP) Power Gain vs. Output Power 14 13 240 IDQ = 580 mA Capacitance vs. Supply Voltage * 24 200 160 120 80 40 0 Power Gain (dB) 12 11 10 9 8 7 0.1 Cds and Cgs (pF) VGS = 0 V f = 1 MHz 18 12 IDQ = 290 mA Cds 6 IDQ = 145 mA 1.0 VDD = 28 V f = 2000 MHz 10.0 100.0 Crss 0 0 10 20 30 40 Output Power (Watts) Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results. Bias Voltage vs. Temperature 1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 Temp. (C) 80 130 0.400 1.383 2.367 3.350 4.333 5.317 Voltage normalized to 1.0 V Series show current (A) 3 Crss Cgs PTF 10112 Impedance Data VDD = 28 V, POUT = 60 W, IDQ = 580 mA D e Z Source Z Load Z0 = 50 W G S Frequency GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 R Z Source W jX -4.50 -4.80 -5.10 -5.50 -6.10 -4.60 -1.70 R 3.74 3.80 3.96 4.90 7.90 9.00 10.00 Z Load W jX 0.25 -0.20 -0.50 -0.80 -0.60 -0.45 -0.30 1.48 1.56 1.66 1.32 1.16 1.10 1.18 4 e Test Circuit PTF 10112 Test Circuit Block Diagram for f = 1.93-1.99 GHz Q1 PTF 10112 .10 l @ 2.0 GHz .08 l @ 2.0 GHz .162 l @ 2.0 GHz .22 l @ 2 GHz 10 pF Chip Cap 0.1 mF Chip Cap 10 mF SMT Tantalum LDMOS RF Transistor Microstrip 50 W Microstrip 9.4 W Microstrip 70 W Microstrip 5.8 W Microstrip 65 W ATC 100 B L1 L2 R1, R2 R3 R4 R5 Circuit Board 2.7 nh SMT Coil 4mm SMT Ferrite Bead 220 W Chip Resistor K1206 2K SMT Potentiometer 10 W Chip Resistor K1206 1W Chip Resistor K1206 .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper l1, l6 l2 l3 l4 l5 C1, C2, C5, C8 C3, C7 C4, C6 10112 Parts Layout (not to scale) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA e Artwork (1 inch ) 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1998 Ericsson Inc. EUS/KR 1301-PTF 10112 Uen Rev. A 01-08-2000 5 e Notes: 6 |
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