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| Preliminary data SPD10N10 SPU10N10 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 100 V 100 V ID 10 A 10 A RDS(on) 0.2 0.2 Package Ordering Code SPD10N10 SPU10N10 P-TO252 P-TO251 C67078-S. . . - . . C67078-S. . . - . . Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 C ID A 10 Pulsed drain current TC = 25 C IDpuls 40 EAS Avalanche energy, single pulse ID = 10 A, V DD = 25 V, RGS = 25 L = 1.18 mH, Tj = 25 C mJ 59 VGS Ptot Gate source voltage Power dissipation TC = 25 C 20 40 V W Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA RthJA -55 ... + 150 -55 ... + 150 C 3.1 50 100 55 / 150 / 56 K/W ** when mounted on 1 " square PCB ( FR4 );for recommended footprint Semiconductor Group 1 23/Jan/1998 Preliminary data SPD10N10 SPU10N10 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 100 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 A Zero gate voltage drain current V DS = 100 V, V GS = 0 V, Tj = 25 C V DS = 100 V, V GS = 0 V, Tj = 125 C IGSS 0.1 10 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 6 A 0.15 0.2 Semiconductor Group 2 23/Jan/1998 Preliminary data SPD10N10 SPU10N10 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS 2 * ID * RDS(on)max, ID = 6 A gfs S 3 4.3 pF 400 530 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 120 180 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 70 105 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 3 A RG = 50 tr 10 15 Rise time V DD = 30 V, VGS = 10 V, ID = 3 A RG = 50 td(off) 45 70 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 3 A RG = 50 tf 55 75 Fall time V DD = 30 V, VGS = 10 V, ID = 3 A RG = 50 - 40 55 Semiconductor Group 3 23/Jan/1998 Preliminary data SPD10N10 SPU10N10 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 C IS A 10 Inverse diode direct current,pulsed TC = 25 C ISM V SD - 40 V Inverse diode forward voltage V GS = 0 V, IF = 20 A trr 1.4 1.6 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/s Qrr 170 C Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/s - 0.3 - Semiconductor Group 4 23/Jan/1998 Preliminary data SPD10N10 SPU10N10 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 11 A ID 9 8 45 W Ptot 35 30 7 25 20 15 10 2 5 0 0 20 40 60 80 100 120 C 160 1 0 0 20 40 60 80 100 120 C 160 6 5 4 3 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 t = 43.0s p Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W ZthJC A = /I D ID R V DS 100 s 10 1 DS (o n) 10 0 1 ms 10 -1 10 ms D = 0.50 0.20 10 0 10 -2 DC single pulse 0.10 0.05 0.02 0.01 10 -1 0 10 10 1 V 10 2 VDS 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Semiconductor Group 5 23/Jan/1998 Preliminary data SPD10N10 SPU10N10 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 24 A 20 ID 18 16 14 12 f g i Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.65 Ptot = 40W l k j VGS [V] a b c 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 0.55 RDS (on) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 b a a b c d e f g h hd e f g h i 10 e 8 d j k 10.0 l 20.0 i j k VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 k h i j 8.0 9.0 10.0 20.0 6 c 4 2 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.05 0.00 V 8.0 0 2 4 6 8 10 12 14 16 A 20 VDS ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 24 A 20 I D parameter: tp = 80 s, V DS2 x ID x RDS(on)max 6.0 S 5.0 g fs 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 V VGS 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 0 4 8 12 16 A ID 22 Semiconductor Group 6 23/Jan/1998 Preliminary data SPD10N10 SPU10N10 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 6 A, VGS = 10 V 0.65 Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 VGS(th) 3.6 3.2 2.8 2.4 2% typ 98% 0.55 RDS (on) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -20 20 60 100 C 160 typ 98% 2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 nF C A IF 10 0 10 1 Ciss 10 -1 Coss C rss 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 23/Jan/1998 Preliminary data SPD10N10 SPU10N10 Avalanche energy EAS = (Tj) parameter: ID = 10 A, VDD = 25 V RGS = 25 , L = 1.18 mH 60 mJ 50 EAS 45 40 35 30 25 20 15 10 5 0 20 40 60 80 100 120 C 160 Drain-source breakdown voltage V(BR)DSS = (Tj) 120 V 116 114 V(BR)DSS 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 C 160 Tj Tj Semiconductor Group 8 23/Jan/1998 Preliminary data SPD10N10 SPU10N10 Package Outlines P-TO252 Dimension in mm P-TO251 Dimension in mm Semiconductor Group 9 23/Jan/1998 |
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