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| Final data SPW20N60S5 VDS RDS(on) ID 600 0.19 20 P-TO247 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved noise immunity V A Type SPW20N60S5 Package P-TO247 Ordering Code Q67040-S4238 Marking 20N60S5 Maximum Ratings, at TC = 25C, unless otherwise specified Parameter Continuous drain current TC = 25 C TC = 100 C Symbol ID Value 20 13 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =-A, VDD=50V ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg 40 690 1 20 6 20 208 -55... +150 A V/ns V W C mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =20A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS =20A, VDS < VDD, di/dt=100A/s, Tjmax =150C Gate source voltage Power dissipation, TC = 25C Operating and storage temperature Page 1 2002-11-22 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj = 25 C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPW20N60S5 Symbol min. RthJC RthJA Tsold - Values typ. 1/0.6 max. 0.6 50 260 Unit K/W W/K C V(BR)DSS V(BR)DS VGS(th) IDSS 600 3.5 700 4.5 5.5 V Drain-source avalanche breakdown voltage VGS =0V, ID =20A Gate threshold voltage, VGS = VDS ID =1mA Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 C VDS = 600 V, VGS = 0 V, Tj = 150 C A 0.5 0.16 12 5 250 100 0.19 nA Gate-source leakage current VGS =20V, VDS=0V IGSS RDS(on) RG - Drain-source on-state resistance VGS =10V, ID=13A, Tj =25C Gate input resistance f = 1 MHz, open drain 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR Page 2 2002-11-22 Final data Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 2) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =350V, ID =20A, VGS =0 to 10V VDD =350V, ID =20A SPW20N60S5 Symbol Conditions min. Values typ. 12 3000 1170 28 83 160 120 25 130 30 max. 195 45 Unit g fs Ciss Coss Crss V DS2*I D*R DS(on)max, ID=13A V GS=0V, V DS=25V, f=1MHz - S pF Effective output capacitance, 1) Co(er) V GS=0V, V DS=0V to 480V pF t d(on) tr t d(off) tf V DD=350V, V GS=0/10V, ID=20A, R G=3.6 - ns - 21 47 79 8 103 - nC V(plateau) VDD =350V, ID =20A V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-11-22 Final data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Characteristics Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr V GS=0V, I F=IS V R=350V, I F=I S , diF/dt=100A/s SPW20N60S5 Symbol Conditions min. Values typ. 1 610 12 max. 20 40 1.2 - Unit IS ISM TC=25C - A V ns C Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.007416 0.016 0.021 0.06 0.083 0.038 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0004409 0.001462 0.0024 0.003031 0.02 0.146 Ws/K Unit Symbol Value typ. Unit Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2002-11-22 Final data 1 Power dissipation Ptot = f (TC ) 240 SPW20N60S5 SPW20N60S5 2 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC =25C 10 2 W 200 180 A 10 1 Ptot 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 10 -1 10 0 ID 160 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (tp ) parameter: D = tp/T 10 0 4 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 10 s, VGS A 75 K/W 10 -1 60 55 20V 15V 12V 11V ZthJC ID 50 45 10V 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 40 35 30 25 20 15 10 5 7V 8V 9V 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 0 s 10 tp 0 0 5 10 15 20 V VDS 30 Page 5 2002-11-22 Final data 5 Typ. output characteristic ID = f (VDS ); Tj=150C parameter: tp = 10 s, VGS 35 SPW20N60S5 6 Typ. drain-source on resistance RDS(on) =f(ID ) parameter: Tj =150C, VGS 1.5 m A 20V 12V 10V 1.3 9V 25 RDS(on) 1.2 1.1 1 ID 8.5V 20 8V 6V 6.5V 7V 7.5V 8V 8.5V 9V 10V 12V 20V 0.9 0.8 0.7 15 7.5V 10 7V 6.5V 0.6 0.5 0.4 5 6V 0 0 5 10 15 V VDS 25 0.3 0 5 10 15 20 25 30 A ID 40 7 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 13 A, VGS = 10 V 1.1 SPW20N60S5 8 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 70 0.9 A 60 55 RDS(on) 0.8 50 25C 150C ID 98% typ -20 20 60 100 C 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -60 180 45 40 35 30 25 20 15 10 5 0 0 5 10 V 20 Tj Page 6 VGS 2002-11-22 Final data 9 Typ. gate charge VGS = f (QGate ) parameter: ID = 20 A pulsed 16 V 0.2 VDS max SPW20N60S5 SPW20N60S5 10 Forward characteristics of body diode IF = f (VSD ) parameter: Tj , tp = 10 s 10 2 SPW20N60S5 A 12 0.8 VDS max VGS 10 1 10 8 6 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 nC 4 2 0 0 20 40 60 80 120 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR ) par.: Tj 150 C 20 12 Avalanche energy EAS = f (Tj ) par.: ID = - A, VDD = 50 V 750 mJ A 600 550 E AS 10 Tj(START)=25C I AR 500 450 400 350 300 250 5 Tj(START)=125C 200 150 100 50 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 4 s 10 tAR 0 20 40 60 80 100 120 C 160 Tj Page 7 2002-11-22 Final data 13 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPW20N60S5 SPW20N60S5 14 Avalanche power losses PAR = f (f ) parameter: EAR =1mJ 500 720 V W V(BR)DSS 680 660 640 620 200 600 580 560 540 -60 04 10 P AR 300 100 -20 20 60 100 C 180 10 5 Hz f 10 6 Tj 15 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 5 16 Typ. Coss stored energy Eoss=f(VDS ) 14 pF 10 4 Ciss J 12 11 E oss Coss Crss 10 9 8 7 10 3 C 10 2 6 5 4 10 1 3 2 1 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Page 8 2002-11-22 Final data SPW20N60S5 Definition of diodes switching characteristics Page 9 2002-11-22 Final data P-TO-247-3-1 SPW20N60S5 Page 10 2002-11-22 Final data 15.9 6.35 o3.61 5.03 2.03 SPW20N60S5 4.37 20.9 9.91 6.17 D 7 D 1.75 1.14 0.243 1.2 2 2.92 5.46 16 0.762 MAX. 2.4 +0.05 General tolerance unless otherwise specified: Leadframe parts: 0.05 Package parts: 0.12 41.22 2.97 x 0.127 5 5.94 20 Page 11 2002-11-22 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPW20N60S5 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 12 2002-11-22 |
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