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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2461 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES * Low On-Resistance RDS(on)1 = 80 m MAX. (@ VGS = 10 V, ID = 10 A) 15.0 0.3 3 0.1 4 0.2 12.0 0.2 13.5MIN. RDS(on)2 = 0.1 MAX. (@ VGS = 4 V, ID = 10 A) * Low Ciss Ciss = 1400 pF TYP. * Built-in G-S Gate Protection Diodes * High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* VDSS VGSS ID(DC) ID(pulse) 100 20 20 80 35 2.0 150 20 40 V V A A W W C A mJ 0.7 0.1 2.54 1.3 0.2 1.5 0.2 2.54 2.5 0.1 0.65 0.1 Total Power Dissipation (Tc = 25 C) PT1 Total Power Dissipation (TA = 25 C) PT2 Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % Tch Tstg IAS EAS 1. Gate 2. Drain 3. Source 123 -55 to +150 C MP-45F (ISOLATED TO-220) Drain ** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 Body Diode Gate Gate Protection Diode Source Document No. TC-2529 (O. D. No. TC-8078) Date Published April 1995 P Printed in Japan (c) 1995 2SK2461 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source On-Resistance Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 1400 470 150 21 110 140 110 51 4.9 15 1.1 170 770 1.0 12 MIN. TYP. 58 70 1.7 19 10 10 MAX. 80 100 2.0 UNIT m m V S TEST CONDITIONS VGS = 10 V, ID = 10 A VGS = 4 V, ID = 10 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 10 A VDS = 100 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 10 A VGS(on) = 10 V VDD = 50 V RG = 10 ID = 20 A VDD = 80 V VGS = 10 V IF = 20 A, VGS = 0 IF = 20 A, VGS = 0 di/dt = 100 A/s A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Avalanche Capability D.U.T. RG = 25 PG. VGS = 20 0 V 50 Test Circuit 2 Switching Time D.U.T. L VDD PG. RG RG = 10 RL VGS Wave Form VGS 0 10 % VGS (on) 90 % VDD ID 90 % 90 % ID BVDSS IAS ID VDD VDS VGS 0 t t = 1 s Duty Cycle 1 % ID Wave Form 0 10 % td (on) ton tr td (off) toff 10 % tf Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2461 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 70 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 80 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160 60 40 20 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 50 FORWARD BIAS SAFE OPERATING AREA ID(pulse) 100 d PW ite V) im 0 10 =1 )L=1 n 0 0 (o S S s s RD t VG ID(DC) (a 1 m s 10 10 20 m Po s 0 w m er s DC Di ss ipa tio 1 n Lim ite d TC = 25 C Single Pulse 0.1 1 10 100 1000 ID - Drain Current - A ID - Drain Current - A VGS = 10 V 40 30 VGS = 6 V VGS = 4 V 20 10 0 2 4 6 8 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed ID - Drain Current - A 100 10 TA = -25 C 25 C 125 C VDS = 10 V 1 0 5 10 15 VGS - Gate to Source Voltage - V 3 2SK2461 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W Rth(ch-a) = 62.5 C/W 100 10 1 Rth(ch-c) = 3.57 C/W 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 1000 TA =-25 C 25 C 75 C 125 C VDS=10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 140 120 100 80 ID = 8.0 A 60 40 20 0 10 20 30 Pulsed 100 10 1 0.1 1 10 100 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 160 RDS(on) - Drain to Source On-State Resistance - m VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V Pulsed 2.0 VDS = 10 V ID = 1 mA 120 1.5 80 VGS = 4 V VGS = 10 V 1.0 40 0.5 0 1 10 ID - Drain Current - A 100 0 -50 0 50 100 150 Tch - Channel Temperature - C 4 2SK2461 RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 120 VGS = 4 V 80 VGS = 10 V 40 ID = 10 A -50 0 50 100 150 ISD - Diode Forward Current - A 160 1000 100 4V 10 VGS = 0 1 0 1.0 2.0 3.0 0 Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VSD - Source to Drain Voltage - V SWITCHING CHARACTERISTICS 1 000 10 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1 MHz Ciss td(off) 100 tf tr td(on) 1 000 Coss Crss 100 10 10 1 10 100 1 000 VDS - Drain to Source Voltage - V 1.0 0.1 1.0 10 VDD = 50 V VGS =10 V RG =10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 000 di/dt = 50 A/ s VGS = 0 80 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns VDD = 80 V ID = 20 A 16 60 VDS 40 VGS 12 10 8 6 1 000 100 20 4 2 10 0.1 1.0 10 100 0 20 40 60 0 80 ID - Drain Current - A Qg - Gate Charge - nC 5 VGS - Gate to Source Voltage - V 14 2SK2461 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 160 SINGLE AVALANCHE ENERGY DERATING FACTOR IAS - Single Avalanche Energy - mJ Energy Derating Factor - % IAS = 20 A 10 140 120 100 80 60 40 20 VDD = 50 V RG = 25 VGS = 20 V 0 IAS 20 A EAS =4 0m J 1.0 VDD = 50 V VGS = 20 V 0 RG = 25 10 100 1m 10 m 0 25 50 75 100 125 150 175 L - Inductive Load - H Starting Tch - Starting Channel Temperature - C 6 2SK2461 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7 2SK2461 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
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