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| TH416 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TH416 is a 28 V epitaxial planar transistor primarily designed for SSB communications. PACKAGE STYLE .500 4L FLG .112x45 A FULL R L FEATURES: * PG = 12 dB min. at 130 W/30 MHz * IMD = -30 dBc max. at 130 W(PEP) * OmnigoldTM Metalization System * Emitter Ballasting C B E C O.125 NOM. B D G F E E H IJ K MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 12 A 70 V 35 V 4.0 V 175 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 1.0 C/W DIM A B C D E F G H I J K L .980 / 24.89 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .245 / 6.22 .720 / 18.28 .125 / 3.18 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICES hFE Cob GP IMD IC = 50 mA IE = 20 mA VCE = 35 V VCE = 5.0 V VCB = 28 V VCE = 28 TC = 25 C NONETEST CONDITIONS IC = 100 mA MINIMUM TYPICAL MAXIMUM 35 70 4.0 20 UNITS V V V mA --pF dB IC = 7.0 A f = 1.0 MHz PPUT = 130 W ICQ = 150 mA 20 --12 220 50 --- f = 30.000 MHz -30 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1 |
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