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| Low-Drop Voltage Tracker Target Data Features * * * * * * * * * * * Output tracking tolerance 0.5% Low drop voltage Wide operation range: up to 40 V Wide temperature range: - 40 C Tj 150 C Output protected against short circuit Overtemperature protection Reverse polarity proof SCT-595 Combined Tracking/Enable input Very small SMD-Package SCT 595 Very low current consumption in stand-by (disable) mode Suitable for use in automotive electronics Ordering Code Q67006-A9351 Package TLE 4250 G Type w TLE 4250 G w New type Functional Description SCT-595 (SMD) The TLE 4250 G is a monolithic integrated low-drop voltage tracker in the very small SMD package SCT 595. It is designed to supply e.g. sensors under the severe conditions of automotive applications. Therefore the device is equipped with additional protection functions against over load, short circuit and reverse polarity. At over temperature. Supply voltages up to 40 V are tracked to a reference voltage at the adjust input. Therefore the Adjust/Enable pin has to be connected to the reference voltage via an external resistor controlled by an n-channel open drain or direct by a micro-controller port. The output is able to drive a load up to 50 mA while it follows e.g. the 5 V output of a main voltage regulator within an accuracy of 0.5%. The TLE 4250 G can be switched in stand-by mode via the adjust/enable input which causes the current consumption to drop to very low values. This feature makes the IC suitable for low power battery applications. Semiconductor Group 1 1998-11-01 TLE 4250 G Pin Configuration (top view) ADJ/EN 1 5 GND GND 2 3 4 Q AEP02581 Pin Definitions and Functions Pin No. 1 2 3 4 5 Symbol ADJ/EN GND I Q GND Function Adjust/Enable input; connect to the reference voltage via ext. resistor or micro-controller port; high active input Ground; internally connected to pin 5 Input voltage Output voltage; must be blocked by a capacitor CQ 1 F, ESR 10 to GND Ground Semiconductor Group 2 1998-11-01 TLE 4250 G TLE 4250G 3 4 Q 2, 5 AEB02582 Figure 1 Block Diagram Semiconductor Group 3 + - 1 ADJ/EN 1998-11-01 TLE 4250 G Absolute Maximum Ratings - 40 C < Tj < 150 C Parameter Symbol Limit Values min. Input Voltage Current Output Voltage Current Adjust/Enable Voltage Current Temperatures Junction temperature Storage temperature Thermal Resistances Junction pin Junction ambient 1) 1) Unit Remarks max. VI II - 42 - 45 - V mA - internally limited VQ IQ -1 - 40 - V mA - internally limited VADJ/EN IADJ/EN - 0.3 - 40 - V A - internally limited Tj Tstg - 40 - 50 150 150 C C - - Rthj-pin Rthja - - 30 55 K/W K/W measured to pin 5 1) Package mounted on PCB 40 mm x 40 mm x 1.5 mm/6 cm2 Cu Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Semiconductor Group 4 1998-11-01 TLE 4250 G Operating Range Parameter Input voltage Adjust/Enable input voltage Junction temperature Symbol Limit Values min. max. 40 36 150 V V C - - - 4 2.8 - 40 Unit Remarks VI VADJ/EN Tj Semiconductor Group 5 1998-11-01 TLE 4250 G Electrical Characteristics VI = 13.5 V; VADJ/EN > 2.8 V; - 40 C < Tj < 150 C; unless otherwise specified Parameter Symbol Limit Values min. Output Output voltage tracking accuracy DVQ = VADJ/EN - VQ Output voltage tracking accuracy Output voltage tracking accuracy Drop voltage typ. max. Unit Test Condition DVQ - 25 - 25 mV Rext = 500 k 6 V < VI < 28 V 1 mA < IQ < 50 mA Rext = 500 k 6 V < VI < 40 V 1 mA < IQ < 10 mA Rext = 500 k 6 V < VI < 16 V 1 mA < IQ < 10 mA DVQ - 25 - 25 mV DVQ -5 - 5 mV Vdr - 100 300 mV IQ = 10 mA; VADJ/EN > 4 V; see note 2) see note 2) ESR 10 at 10 kHz Output current Output capacitor Current consumption Iq = II - IQ Current consumption Iq = II - IQ Quiescent current (stand-by) Iq = II - IQ IQ CQ Iq Iq Iq 50 1 - - - 70 - 2.5 80 10 - - 3.0 150 20 mA F mA A A IQ < 30 mA IQ < 1 mA VDIS < VDIS, low; Tj < 85 C note 2) Measured when the output voltage VQ has dropped 100 mV from the nominal value. Regulator Performance Load regulation Line regulation DVQ DVQ - 15 - 10 - - 15 10 mV mV 1 mA < IQ < 30 mA; Tj = 25 C 6 V < VI < 40 V IQ = 10mA; Tj = 25 C Semiconductor Group 6 1998-11-01 TLE 4250 G Electrical Characteristics (cont'd) VI = 13.5 V; VADJ/EN > 2.8 V; - 40 C < Tj < 150 C; unless otherwise specified Parameter Power-Supply-RippleRejection Adjust/Disable Input Input biasing current Adjust low threshold to disable Symbol Limit Values min. typ. 60 max. - dB - Unit Test Condition PSRR fr = 100 Hz; Vr = 0.5 VSS IADJ VADJ/EN - 0.8 0.1 2.2 0.5 2.8 A V - VADJ/EN - VQ > 25 mV Semiconductor Group 7 1998-11-01 TLE 4250 G Di 6 ... 40 V V e.g. TLE 4470 TLE 4270 TLE 4478 GND VQ VREF 5V VCC C 100 nF I/O TLE 4250G 3 4Q 5V e.g. to sensor C 100 nF CQ 1 F 2, 5 AES02583 Figure 2 Application Circuit Semiconductor Group + - 1 ADJ/EN 8 1998-11-01 TLE 4250 G Package Outlines SCT-595 (Special Package) 2.9 0.2 (2.2) 1.2 +0.1 -0.05 (0.3) A +0.2 acc. to DIN 6784 1.1 max 0.1 max B 2.6 max 0.25 min 0.3 +0.1 -0.05 0.6 +0.1 -0.05 0.95 1.9 0.25 M 0.15 +0.1 -0.06 0.20 M A B GPW05997 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Semiconductor Group 9 10max 1.6 0.1 10max Dimensions in mm 1998-11-01 |
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