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TELEFUNKEN Semiconductors
TLMD310.
High Intensity SMD LED
Color Double hetero red Type TLMD3100 Technology GaAlAs on GaAs Angle of Half Intensity o 60
Description
These new devices have been designed to meet the increasing demand for surface mounting technology. This device is used for outdoor or for low power applications. The package of the TLMD310. is the PL-CC-2 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is surrounded with a white thermoplast. The reflector inside this package is filled up with clear epoxy.
Features
D D D D D
SMD LEDs with exceptional brightness Luminous intensity categorized Compatible with automatic placement equipment EIA and ICE standard package Compatible with infrared, vapor phase and wave solder processes according to CECC
94 8553
D Available in 8 mm tape D Low profile package D Non-diffused lens: excellent for coupling to light
pipes and backlighting
D Low power consumption D Luminous intensity ratio in one packaging unit
IVmax/IVmin
x 2.0
Applications
Automotive: backlighting in dashboards and switches Telecommunication: indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight for battery driven equipment Small indicator for outdoor applications Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols General use
Rev. A1: 01.06.1995
1 (7)
TLMD310.
Absolute Maximum Ratings
Tamb = 25C, unless otherwise specified TLMD3100 Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Test Conditions Type
TELEFUNKEN Semiconductors
tp 10 ms Tamb 60C
t5s mounted on PC board (pad size > 16 mm2)
Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA
Value 6 30 0.5 100 100 -40 to +100 -55 to +100 260 400
Unit V mA A mW C C C C K/W
Optical and Electrical Characteristics
Tamb = 25C, unless otherwise specified Double hetero red (TLMD3100 ) Parameter Luminous intensity y Test Conditions IF = 10 mA IF = 1 mA Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0 V, f = 1 MHz Type Symbol IV IV ld lp VF VR Cj Min 10 Typ 20 2 648 650 60 1.8 15 15 Max Unit mcd mcd nm nm deg V V pF
2.2
6
2 (7)
Rev. A1: 01.06.1995
TELEFUNKEN Semiconductors
TLMD310.
0 Iv rel - Relative Luminous Intensity 10 20 30
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
125 PV - Power Dissipation ( mW )
100
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
75
50 25 0 0 20 40 60 80 100
95 10904
Tamb - Ambient Temperature ( C )
95 10319
Figure 1. Power Dissipation vs. Ambient Temperature
60 IF - Forward Current ( mA )
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
100 DH Red IF - Forward Current ( mA )
50 40 30 20 10 0 0 20 40 60 80 100
10
1 1
95 10014
1.5
2
2.5
3
95 10905
Tamb - Ambient Temperature ( C )
VF - Forward Voltage ( V )
Figure 2. Forward Current vs. Ambient Temperature
10000 Tamb IF - Forward Current ( mA ) tp/T=0.005 1000 0.01 0.02 0.05 100 0.2 0.5 DC 10 0.1
Figure 5. Forward Current vs. Forward Voltage
2.0 Iv rel - Relative Luminous Intensity DH Red 1.6
v60C
1.2
0.8 0.4 0
1 0.01
95 9985
0.1
1
10
100
95 10015
0
20
40
60
80
100
tp - Pulse Length ( ms )
Tamb - Ambient Temperature ( C )
Figure 3. Forward Current vs. Pulse Length
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Rev. A1: 01.06.1995
3 (7)
TLMD310.
2.4 Iv rel - Relative Luminous Intensity DH Red 2.0 1.6 1.2 0.8 0.4 IFAV=10mA, const. 0 10
95 10262
TELEFUNKEN Semiconductors
1.2 Iv rel - Relative Luminous Intensity DH Red 1.0 0.8 0.6 0.4 0.2 0 600
95 10018
20 0.5
50 0.2
100 0.1
200 0.05
500 0.02
IF(mA) tp/T
620
640
660
680
700
1
l - Wavelength ( nm )
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10 Iv rel - Relative Luminous Intensity DH Red
Figure 9. Relative Luminous Intensity vs. Wavelength
1
0.1
0.01 0.1
95 10016
1
10
100
IF - Forward Current ( mA )
Figure 8. Relative Luminous Intensity vs. Forward Current
4 (7)
Rev. A1: 01.06.1995
TELEFUNKEN Semiconductors
TLMD310.
95 11315
Dimensions in mm
Rev. A1: 01.06.1995
5 (7)
TLMD310.
PCB Layout in mm
TELEFUNKEN Semiconductors
95 10966
6 (7)
Rev. A1: 01.06.1995
TELEFUNKEN Semiconductors
TLMD310.
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Rev. A1: 01.06.1995
7 (7)

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