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U2891B
2.5-GHz Quadrature Up-Converter
Description
The U2891B is a silicon monolithic IC made with TEMIC Semiconductors' advanced UHF process. The IC consists of a 500-MHz I/Q quadrature modulator and a 2.5-GHz mixer. Both parts can be connected via an external filter in order to suppress harmonics and spurious products. The device features 3-V operation, low-current consumption and furthermore two separate power-down functions for modulator and mixer. The RF ports are single-ended and the device can be operated adjustment free. These features and the double-conversion concept of U2891B make this device perfectly suited for all digital radio applications from 900 MHz up to 2.5 GHz (e.g., GSM, DCS 1800, JDC, PHP and WLAN). Electrostatic sensitive device. Observe precautions for handling.
Features
D Low power consumption: 25 mA / 3 V (typical at -8 dBm output level) D 2.5 GHz output frequency D Excellent sideband suppression by means of duty cycle regeneration and 90 phase control D Separate power-down mode for modulator and mixer D Low LO input level: -10 dBm (typical) D LO and RF port 50-W single-ended
Benefits
D Extended talk time due to increased battery life D Few external components results in cost and board space saving D Adjustment free, hence saves time and cost D One TX platform for different systems D Reduced costs and space for battery (3-V operation)
Block Diagram
GND 24 BBAi BBAi LO 1 2 3 GND 1 6 SIF PDIF PDRF VS 14 13 Voltage regulator 8, 21, 20
4 5 22 23
Lo - Reg. f/2f
0 90
o Control
RFO 16
50
LO 1 BBBi BBBi
10,17 GND
19 LP 1
18 LP 2 IFO
7
11 IFi
12 IFi
9 LO2
15 SRF
Figure 1. Block diagram
Rev. A4, 17-Mar-00
1 (6)
U2891B
Ordering Information
Extended Type Number U2891B-MFS U2891B-MFSG3 Package SSO24 SSO24 Remarks Tube, MOQ 690 pcs. Taped and reeled, MOQ 4000 pcs.
Pin Description
GND BBAi BBAi LO 1 LO 1 SIF IFO VS LO 2 GND IFi IFi 1 2 3 4 5 6 7 8 9 10 11 12
94 8581 e
24 GND 23 BBBi 22 BBBi 21 VS 20 VS 19 LP 1 18 LP 2 17 GND 16 RFO 15 SRF 14 PDIF 13 PDRF
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Symbol GND BBAi BBAi LO 1 LO 1 SIF IFO VS LO 2 GND IFi IFi PDRF PDIF SRF RFO GND LP 2 LP 1 VS VS BBBi BBBi GND
Function Ground Baseband input A inverse Baseband input A LO 1 input LO 1 input inverse Output symmetry IF IF output Supply voltage LO 2 input Ground IF input IF input inverse Power-down RF Power-down IF Output symmetry RF RF output Ground Filter and IF level adjustment Filter and IF level adjustment Supply voltage Supply voltage Baseband input B Baseband input B inverse Ground
Absolute Maximum Ratings
Supply voltage Input voltage Junction temperature Storage temperature range Parameters Pins 8, 20 and 21 Pins 2, 3, 4, 5, 9, 11, 12, 22 and 23 Symbol VS, VSRF Vi Tj Tstg Value 6 0 to VS 125 -40 to +125 Unit V V C C
Operating Range
Parameters Supply voltage Pins 8, 20 and 21 Ambient temperature range Symbol VS, VSRF Tamb Value 2.7 to 5.5 -40 to +85 Unit V C
2 (6)
Rev. A4, 17-Mar-00
U2891B
Thermal Resistance
Junction ambient Parameters SSO24 Symbol RthJA Value 140 Unit K/W
Electrical Characteristics: General Data
Parameters Power supply Supply voltage range Supply current Test Conditions / Pin Pin 8, 20 and 21 Pin 8, 20 and 21, VS = 3 V Symbol VS, VSRF IS, ISRF Min. 2.7 25 Typ. Max. 5.5 Unit V mA
Electrical Characteristics: I/Q Modulator
Test conditions (unless otherwise specified): VS = 3 V, Tamb = 25C, referred to test circuit. System impedance Zo = 50 W, fLO1 = 100 MHz, PLO1 = -10 dBm. Parameters Test Conditions / Pin Symbol IF output Pin 7 Output level RLP = R PIFo LO1 suppression LORFo Voltage standing wave ratio VSWRIFo Sideband suppression SBSIFo Baseband inputs Pins 2, 3, 22 and 23 Input voltage range VBBi (differential) Input impedance ZBBi Input frequency fBBi LO1 input Pins 4 and 5 Frequency range fLOi 1) Input level PLOi Input impedance ZiLO Duty cycle range DCRLO1 Power-down mode Supply current VPD v 0.5 V Pin 14 IPD Settling time CSPD 100 pF, tS CLO = 100 pF, CRFo = 1 nF Power down voltage Pin 14 "Power on" VS = 3.5 to 5.5 V VPON VS = 2.7 to 3.5 V "Power down" VPDN Power down current Power on IPON Power down IPDN Note: 1) Required LO level is a function of the LO frequency Min. Typ. -8 40 1.4 45 500 150 200 30 -10 tbd. 0.4 <5 10 500 -2 0.6 mA ms Max. Unit dBm dB 2 dB 900 mVpp kW MHz MHz dBm W
VS - 0.5 VS 0.15 <1
VS +0.5 VS +0.5 1
V V V mA mA
Rev. A4, 17-Mar-00
3 (6)
U2891B
Electrical Characteristics: Mixer
VS = 3 V, fLO2 = 800 MHz, fIF = 100 MHz, PLO2 = - 10dBm, system impedance Zo = 50 W, Tamb = 25 C, reference point Pin 10, unless otherwise specified Parameters Operating frequencies RFO frequency LO2 frequency Isolation LO2 spurious at RFo Test Conditions / Pin Pin 16 Pin 9 Pin 9-16 PiLO = -10 to 0 dBm Pin 16-9 Symbol RFO fLO2 ISLO2-RFo Min. 50 50 -30 tbd. -7 -15 -10 -6 Typ. Max. 2500 2500 Unit MHz MHz dBm dB dBm dBm dBm dBm
RFo to LO2 ISRFo-LO2 Output level Output compression point Pin 16 RPo = R CPo - 1 dB Input level Input compression point 1) Pins 11 and 12 CPi - 1dB Input LO2 Pin 9 PLO2 Third order input Pins 11 and 12 PiIIP3 intercept point 1) Voltage standing wave ratio (VSWR) Input IF Pins 11 and 12 VSWRIFi Input LO2 Pin 9 VSWRLO2 Output RF Pin 16 VSWRRF Conversion power gain RL = 50 W PGC Noise Figure (SSB) 2) PiLO = - 6 dBm NF50 Power-down mode Supply current VPD v 0.5 V Pin 13 IPD Settling time CSPD 100 pF, tS CLO = 100 pF, CRFo = 1 nF Power down voltage Pin 13 "Power on" VS = 3.5 to 5.5 V VPON VS - 0.5 VS = 2.7 to 3.5 V VS "Power down" VPDN Power down current Power on IPON Power down IPDN Note: 1) with 50 W termination resistor at Pin 11 2) without termination resistor
tbd. tbd. tbd. 9 13 <5 10
dB dB mA ms
VS +0.5 VS +0.5 1 0.15 <1
V V V mA mA
4 (6)
Rev. A4, 17-Mar-00
U2891B
Packing Information
Package SSO24
Dimensions in mm
8.05 7.80 5.7 5.3 4.5 4.3
1.30 0.25 0.65 7.15 24 13 0.15 0.05 0.15 6.6 6.3
technical drawings according to DIN specifications 13017
1
12
Rev. A4, 17-Mar-00
5 (6)
U2891B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
23.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Data sheets can also be retrieved from the Internet: http://www.temic-semi.com
TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423
6 (6)
Rev. A4, 17-Mar-00

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