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| Matched N Channel JFET Pairs Product Summary Part Number U440 U441 Siliconix U440/441 VGS(off) (V) -1 to -6 -1 to -6 V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) -25 -25 4.5 4.5 -1 -1 jVGS1 - VGS2j Typ (mV) 10 20 Features D D D D D D Two Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 1 pA Low Noise High CMRR: 85 dB. Benefits D Minimum Parasitics Ensuring Maximum High Frequency Performance D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal Applications D Wideband Differential Amps D High Speed, Temp Compensated, Single Ended Input Amps D High Speed Comparators D Impedance Converters Description The U440/441 are matched pairs of JFETs mounted in a single TO 71 package. This two chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. TO 71 S1 1 D1 2 3 G1 Top View 4 S2 6 5 D2 G2 The hermetically sealed TO 71 package is available with full military screening per MIL S 19500 (see Military Information). For similar products in SO 8 packaging see the SST440/SST441 data sheet. For low noise opions, see the SST/U401 series data sheet. For low leakage alternatives, see the U421/423 data sheet. Absolute Maximum Ratings Gate Drain, Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C P-37405--Rev. C (07/04/94) Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2 mW/_C above 25_C b. Derate 4 mW/_C above 25_C 1 U440/441 Specificationsa Limits U440 Siliconix U441 Parameter Static Gate Source Breakdown Voltage Gate Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current Gate Source Forward Voltage Symbol Test Conditions Typb Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS(F) IG = -1 mA, VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 5 mA TA = 125_C IG = 1 mA , VDS = 0 V -35 -3.5 15 -1 -2 -1 -0.3 0.7 -25 -1 6 -6 30 -500 -500 -25 V -1 6 -6 30 -500 -500 mA pA nA pA nA V Dynamic Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos Ciss Crss en , VDS = 10 V, ID = 5 mA kHz f = 1 kH 6 70 3 pF 1 4 nV Hz 4.5 9 200 4.5 9 200 mS mS , VDS = 10 V, ID = 5 mA f = 1 MHz MH VDS = 10 V, ID = 5 mA f = 10 kHz Matching Differential Gate Source Voltage Gate Source Voltage Differential Change with Temperature Saturation Drain Current Ratiod Transconductance Ratiod Common Mode Rejection Ratio |VGS1 VGS2| VDG = 10 V, ID = 5 mA VDG = 10 V, ID = 5 mA TA = -55 to 125_C VDS = 10 V, VGS = 0 V VDS = 10 V, ID = 5 mA f = 1 kHz VDG = 5 to 10 V, ID = 5 mA 6 20 0.97 0.97 85 dB NZFD 10 20 mV mV/_C D|VGS1 VGS2| DT I DSS1 I DSS2 gfs1 gfs2 CMRR Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. Assumes smaller value in the numerator. 2 P-37405--Rev. C (07/04/94) Siliconix U440/441 20 gfs - Forward Transconductance (mS) 100 nA 10 nA I G - Gate Leakage 1 nA 100 pA 10 pA 1 pA 0.1 pA TA = 25_C IGSS @ 25_C 0 4 8 12 16 20 Typical Characteristics 50 I DSS - Saturation Drain Current (mA) Drain Current and Transconductance vs. Gate Source Cutoff Voltage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz Gate Leakage Current IG(on) @ ID TA = 125_C IGSS @ 125_C 1 mA 10 mA 1 mA 40 16 12 ID = 10 mA 30 20 gfs 8 10 0 0 IDSS 4 0 -10 -2 -4 -6 -8 VGS(off) - Gate Source Cutoff Voltage (V) VDG - Drain Gate Voltage (V) 10 Output Characteristics VGS(off) = -2 V 30 Output Characteristics VGS(off) = -5 V VGS = 0 V -0.5 V -1.0 V I D - Drain Current (mA) VGS = 0 V -0.2 V -0.4 V -0.6 V -0.8 V -1.0 V -1.2 V 0 2 4 6 8 10 6 I D - Drain Current (mA) 8 24 18 -1.5 V -2.0 V 4 12 -2.5 V -3.0 V -3.5 V 2 0 6 0 0 2 4 6 8 10 VDS - Drain Source Voltage (V) VDS - Drain Source Voltage (V) 5 Output Characteristics VGS(off) = -2 V VGS = 0 V I D - Drain Current (mA) -0.2 V -0.4 V -0.6 V 15 Output Characteristics VGS(off) = -5 V VGS = 0 V -0.5 V I D - Drain Current (mA) 4 12 -1.0 V -1.5 V -2.0 V 3 2 9 -0.8 V -1.0 V -1.2 V 6 -2.5 V -3.0 V -3.5 V 1 0 3 0 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 VDS - Drain Source Voltage (V) P-37405--Rev. C (07/04/94) VDS - Drain Source Voltage (V) 3 U440/441 Typical Characteristics (Cont'd) 10 Siliconix Transfer Characteristics VGS(off) = -2 V VDS = 10 V I D - Drain Current (mA) 30 Transfer Characteristics VGS(off) = -5 V VDS = 10 V I D - Drain Current (mA) 8 TA = -55_C 6 25_C 24 TA = -55_C 25_C 125_C 18 4 125_C 12 2 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate Source Voltage (V) 6 0 0 -1 -2 -3 -4 -5 VGS - Gate Source Voltage (V) 10 g fs - Forward Transconductance (mS) Transconductance vs. Gate Source Voltage g fs - Forward Transconductance (mS) VGS(off) = -2 V VDS = 10 V f = 1 kHz 10 Transconductance vs. Gate Source Voltage VGS(off) = -5 V 8 TA = -55_C 25_C 125_C 8 25_C TA = -55_C 6 6 4 4 125_C 2 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate Source Voltage (V) 2 0 0 VDS = 10 V f = 1 kHz -1 -2 -3 -4 -5 VGS - Gate Source Voltage (V) 40 A V - Voltage Gain g fs RL AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 10 V ID VGS(off) = -2 V rDS(on) - Drain Source On Resistance ( W ) 50 Circuit Voltage Gain vs. Drain Current 200 On Resistance vs. Drain Current 160 VGS(off) = -2 V 30 120 VGS(off) = -5 V 20 VGS(off) = -5 V 80 10 0 40 TA = 25_C 0 1 10 ID - Drain Current (mA) P-37405--Rev. C (07/04/94) 100 0.1 1 ID - Drain Current (mA) 10 4 Siliconix U440/441 Crss - Reverse Feedback Capacitance (pF) 5 Typical Characteristics (Cont'd) 10 Ciss - Input Capacitance (pF) Common Source Input Capacitance vs. Gate Source Voltage f = 1 MHz Common Source Reverse Feedback Capacitance vs. Gate Source Voltage f = 1 MHz 8 4 6 VDS = 5 V 4 2 VDS = 0 V VDS = 10 V 3 VDS = 5 V 2 VDS = 0 V VDS = 10 V 1 0 0 -4 -8 -12 -16 -20 0 0 -4 -8 -12 -16 -20 VGS - Gate Source Voltage (V) VGS - Gate Source Voltage (V) 100 Input Admittance TA = 25_C VDS = 10 V ID = 10 mA gig bis (mS) 100 Forward Admittance TA = 25_C VDS = 10 V ID = 10 mA 10 (mS) 10 -bfs 1 bfg -gfg gfs 1 big gis 0.1 100 200 500 1000 f - Frequency (MHz) 0.1 100 200 500 1000 f - Frequency (MHz) 10 Reverse Admittance TA = 25_C VDS = 10 V ID = 10 mA -brs (mS) 100 Output Admittance TA = 25_C VDS = 10 V ID = 10 mA 1 (mS) 10 -brg 0.1 -grg 0.01 100 200 500 1000 f - Frequency (MHz) -grs grg bog, bos 1 gog, gos 0.1 100 200 500 1000 f - Frequency (MHz) P-37405--Rev. C (07/04/94) 5 U440/441 Typical Characteristics (Cont'd) 50 en - Noise Voltage (nV Hz) Siliconix Equivalent Input Noise Voltage vs. Frequency VDS = 10 V g os - Output Conductance (mS) 150 Output Conductance vs. Drain Current VGS(off) = -5 V VDS = 10 V f = 1 kHz 40 30 20 ID = 10 mA 120 ID = 1 mA 90 25_C 60 TA = -55_C 10 0 30 125_C 10 100 1k f - Frequency (Hz) 10 k 100 k 0 0.1 1 ID - Drain Current (mA) 10 rDS(on) - Drain Source On Resistance ( W ) 200 On Resistance and Output Conductance vs. Gate Source Cutoff Voltage gos 200 g fs - Forward Transconductance (mS) 10 Common Source Forward Transconductance vs. Drain Current VGS(off) = -5 V VDS = 10 V f = 1 kHz gos - Output Conductance (mS) 160 160 8 TA = -55_C 25_C 4 125_C 120 120 6 80 rDS rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 -2 -4 -6 -8 80 40 0 40 0 -10 2 0 0.1 1 ID - Drain Current (mA) 10 VGS(off) - Gate Source Cutoff Voltage (V) 6 P-37405--Rev. C (07/04/94) |
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