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VBO 20 Single Phase Rectifier Bridge Standard and Avalanche Types VRSM VBRminx V 900 1300 1700 V 1230 1630 VRRM V 800 1200 1600 Standard Type VBO 20-08NO2 VBO 20-12NO2 VBO 20-16NO2 Avalanche Type VBO 20-12AO2 VBO 20-16AO2 + IdAV = 31 A VRRM = 800-1600 V ~ - ~ ~ + - ~ x For Avalanche Types only Symbol IdAV y IdAVM PRSM IFSM Test Conditions TC = 85C, module module TVJ = TVJM t = 10 ms TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 31 40 3.4 300 315 250 265 450 420 312 290 -40...+150 150 -40...+125 A A kW A A A A A2s A2s A2s A2s C C C V~ V~ Nm lb.in. g Features Avalanche rated parts available Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Low forward voltage drop 1/4" fast-on terminals UL registered E 72873 q q q q q q q I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors q q q q TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthJK dS dA a 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s q q q 3000 3600 1.5-2 13-18 15 Advantages Easy to mount with one screw Space and weight savings Improved temperature and power cycling Mounting torque (M5) (10-32 UNF) typ. Test Conditions VR = VRRM; VR = VRRM; IF = 55 A; TVJ = 25C TVJ = TVJM TVJ = 25C Characteristic Values 0.3 5 1.6 0.85 14 3.0 0.75 3.4 0.85 13 9.5 50 mA mA V V mW K/W K/W K/W K/W mm mm m/s2 Dimensions in mm (1 mm = 0.0394") For power-loss calculations only TVJ = TVJM per diode, DC current per module per diode, DC current per module Creeping distance on surface Creepage distance in air z Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated y for resistive load at bridge output, z with isolated fast-on tabs IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 VBO 20 Fig. 1 Surge overload current per diode IFSM: Crest value, t: duration Fig. 2 I2t versus time (1-10 ms) per diode Fig. 3 Max. forward current at case temperature Fig. 4 Power dissipation versus direct output current and ambient temperature Constants for ZthJK calculation: i 1 2 3 Rthi (K/W) 0.775 1.390 1.255 ti (s) 0.0788 0.504 3.701 Fig. 5 Transient thermal impedance junction to heatsink per diode (c) 2000 IXYS All rights reserved 2-2 |
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