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| VHB40-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28S is an epitaxial plana transistor, designed for 28 V, FM, Calss C RF amplifiers utilized in base stations. PACKAGE STYLE .380 4L STUD .112x45 A FEATURES: * Common Emitter * PG = 7.0 dB at 40 W/175 MHz * OmnigoldTM Metalization System * Emitter Ballast resistors B C E OC E B H I J D MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 5.0 A DIM #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm 65 V 35 V 4.0 V 60 W -65 C to +200 C -65 C to +150 C 2.9 C/W A B C D E F G H I J .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10727 CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICES ICBO hFE Cob TC = 25 C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IC = 10 mA IE = 10 mA VCE = 30 V VCB = 30 V VCE = 5.0 V VCB = 30 V IC = 500 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 35 65 65 4.0 10 1.0 5.0 200 65 UNITS V V V V mA mA --pF A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 VHB40-28S ERROR! REFERENCE SOURCE NOT FOUND. PG C POUT VCE = 28 V PIN = 7.0 W f = 175 MHz 7.6 60 40 dB % W .112x45 A C B E E OC B D H I J #8-32 UNC-2A F E G DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2 |
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