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AOL1408 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1408 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1408 is Pb-free (meets ROHS & Sony 259 specifications). AOL1408L is a Green Product ordering option. AOL1408 and AOL1408L are electrically identical.
Features
VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4m (VGS = 10V) RDS(ON) < 6m (VGS = 4.5V)
Ultra SO-8TM Top View D
Fits SOIC8 footprint !
D
Bottom tab connected to drain
S
G S
G
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G
G TC=25C
Maximum 30 20 85 73 200 18 14 30 45 100 50 2.1 1.3 -55 to 175
Units V V
TC=100C
B
Pulsed Drain Current Continuous Drain TA=25C G Current TA=70C C Avalanche Current Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation B Power Dissipation
A
ID IDM IDSM IAR EAR PD PDSM
A
A mJ W W C Max 25 60 1.5 Units C/W C/W C/W
TC=100C TA=25C TA=70C
TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case C
Symbol RJA RJC
Typ 19.6 48 1
Alpha & Omega Semiconductor, Ltd.
AOL1408
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A VDS=5V, ID=20A Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 1 200 1.8 3.2 4.3 4.9 85 0.7 Min 30 0.005 1 5 100 3 4 5.2 6 1 85 7000 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Crss Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime tD(on) Turn-On Rise Time tr Turn-Off DelayTime tD(off) Turn-Off Fall Time tf trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
6060 638 355 0.45 96.4 46.4 13.6 15.6 15.7 14.2 55.5 14 31 24
0.6 115 55
VGS=4.5V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s IF=20A, dI/dt=100A/s
21 21 75 21 38 29
A: The value of RJA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev1. Dec. 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOL1408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 50 40 ID(A) 30 20 10 0 0 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 1 5 10V 4.5V 3.5V ID(A) VGS=3V 60 VDS=5V 50 40 125C 30 20 10 0 1 1.5 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 2 4
25C
6.0 Normalized On-Resistance 5.5 5.0 RDS(ON) (m) 4.5 4.0 3.5 3.0 2.5 2.0 0 20 40 60 80 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 14 ID=20A 12 10 RDS(ON) (m) 8 6 4 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VGS=10V VGS=4.5V
1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 125C 1.0E+00 ID=20A
VGS=4.5V VGS=10V
TC=100C TA=25C 125C
25C
IS (A)
1.0E-01 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 0.0 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 0.2 0.4 1.2
-55 to 175
Alpha & Omega Semiconductor, Ltd.
AOL1408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 8000 VDS=15V ID=20A Capacitance (pF) 7000 6000 5000 4000 3000 2000 1000 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Crss Ciss
1000 10s 100 ID (Amps) 100s Power (W) RDS(ON) limited TJ(Max)=175C TC=25C 1ms 10ms
1000 800 600 400 200 0 0.0001 0.001
TJ(Max)=175C TC=25C
10
DC
1
0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=1.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
TC=100C TA=25C
0.1 PD
-55 to 175
Ton Single Pulse T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOL1408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 ID(A), Peak Avalanche Current TA=25C 80 60 40 20 0 0.00001 120 100 80 60 40 20 0 0.0001 0.001 0.01 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B)
Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability
100 80 Current rating ID(A) 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
Power Dissipation (W)
100 80 Power (W) 60 40 20 0 0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 PD 0.01 Single Pulse 0.001 0.00001 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W 0.001 0.01 0.1 1 Ton
T
0.0001
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.

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