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| AP07N70CF-A Pb Free Plating Product Advanced Power Electronics Corp. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirement RoHS Compliant G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 1.2 7A Description AP07N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220FM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220FM package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching G D S TO-220FM Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 650 30 7 4.4 18 37 0.3 2 Units V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 140 7 7 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 65 Units /W /W 200705052-1/6 Data & specifications subject to change without notice AP07N70CF-A Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 650 2 - Typ. 0.6 4.5 32 8.6 9 17 15 35 18 2075 120 8 Max. Units 1.2 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=3.5A VDS=VGS, ID=250uA VDS=10V, ID=3.5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=30V ID=7A VDS=480V VGS=10V VDD=300V ID=7A RG=10,VGS=10V RD=43 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=5mH , RG=25 , IAS=7A. 3.Pulse width <300us , duty cycle <2%. Parameter Pulsed Source Current ( Body Diode ) Forward On Voltage 3 1 Test Conditions Min. - Typ. - Max. Units 7 18 1.5 A A V Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V Tj=25, IS=7A, VGS=0V 2/4 AP07N70CF-A 12 9 T C =25 o C ID , Drain Current (A) 8 10V 6.0V 5.5V ID , Drain Current (A) 6 T C =150 o C 10V 6.0V 5.5V 5.0V 5.0V 4 3 V G =4.0V V G =4.0V 0 0 5 10 15 20 25 0 0 10 20 30 40 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 I D =3.5A V G =10V 1.1 Normalized BVDSS (V) Normalized RDS(ON) 2 1 1 0.9 0.8 0 -50 0 50 100 150 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Temperature 100 5 Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 4 1 VGS(th) (V) 1.3 T j = 150 o C IS (A) T j = 25 o C 3 0.1 2 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP07N70CF-A 16 10000 f=1.0MHz I D =7A VGS , Gate to Source Voltage (V) 12 C iss V DS =320V V DS =400V V DS =480V C (pF) 8 100 C oss 4 C rss 0 0 10 20 30 40 50 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 10 10us ID (A) 0.1 0.1 0.05 100us 1 PDM 0.02 1ms T c =25 C Single Pluse 0 1 10 100 1000 t T o 0.01 10ms 100ms 10000 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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