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| SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - OCTOBER 1995 FEATURES * 400 Volt VCEO * Low saturation voltage FZT658 C E COMPLEMENTARY TYPE PARTMARKING DETAIL FZT758 FZT658 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Breakdown Voltage SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff 50 50 40 50 10 130 3300 MHz pF ns ns 400 400 5 100 100 0.3 0.25 0.5 0.9 1.0 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MAX. UNIT V V V nA nA V V V V V VALUE 400 400 5 1 0.5 2 -55 to +150 CONDITIONS. IC=100A IC=10mA* IE=100A VCB=320V VEB=4V IC=20mA, IB=1mA* IC=50mA, IB=5mA* IC=100mA, IB=10mA IC=100mA, IB=10mA* IC=100mA, VCE=5V* IC=1mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz IC=100mA, VCC=100V IB1=10mA, IB2=-20mA UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 215 FZT658 TYPICAL CHARACTERISTICS 1.6 IC/IB=10 IC/IB=20 IC/IB=50 Tamb=25C 1.6 1.4 -55C +25C +100C +175C IC/IB=10 - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 0 V 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 0.001 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100C +25C -55C VCE=10V 300 1.6 1.4 -55C +25C +100C +175C IC/IB=10 - Typical gain - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 200 100 h 0.01 0.1 1 10 20 I+ - Collector Current (Amps) h I+ - Collector Current (Amps) hFE v IC 1 VBE(sat) v IC 1.6 1.4 -55C +25C +100C +175C VCE=10V - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 0.1 DC 1s 100ms 10ms 1ms 100s V 0.01 0.001 1 10 100 1000 I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 216 |
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