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| S T G 2507 S amHop Microelectronics C orp. May,10 2005 Dual P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( mW ) Max ID 6.2A R DS (ON) S uper high dense cell design for low R DS (ON). 17 @ V G S = -4.5V 25 @ V G S = -2.5V R ugged and reliable. S urface Mount P ackage. D2 8 S2 7 S2 6 G2 5 T S S OP 1 (T OP V IE W) 1 2 3 4 D1 S1 S1 G1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit -20 12 -6.2 -25 -1.7 1.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 85 C /W 1 S T G 2507 E LE CTR ICAL CHAR ACTE R IS TICS (TA = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS c S ymbol Condition VGS = 0V, ID = 250uA VDS = -16V, VGS = 0V VGS = 12V,VDS = 0V VDS = VGS, ID = 250uA VGS = -4.5V,ID = - 6 A VGS =-2.5V,ID =- 4 A VDS =-5V,VGS =-4.5V VDS = -5V, ID = -6 A Min Typ C Max Unit -20 -1 V uA 100 nA -0.5 -0.8 -1.5 15 17 20 25 22 1782 488 77 V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance -20 S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance CISS COSS CRSS c VDS =-10V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = -10V, ID = 1A, VGEN = -4.5V, R L = 10 ohm R GE N = 6 ohm VDS =-10V, ID = 6A, VGS =-4.5V 6.1 14.8 59 29.7 30.3 4.5 6.5 ns ns ns ns nC nC nC 2 S T G 2507 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =1.7A Min Typ Max Unit -0.76 -1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 V G S =-2V 16 12 V G S =-4.5,-4,-3.5,V 15 -55 C T j=125 C 9 25 C ID, Drain C urrent(A) 12 ID, Drain C urrent (A) 8 V G S =-1.5V 4 V G S =-1V 0 0 2 4 6 8 10 12 6 3 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 2.2 2000 1600 1200 800 C os s 400 C rs s 0 0 4 8 12 16 20 24 0 C is s 1.8 F igure 2. Trans fer C haracteris tics V G S =-4.5V ID=6A RDS(ON), On-Resistance (Normalized) C , C apacitance (pF ) 1.4 1.0 0.6 0.2 -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T G 2507 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 36 F igure 6. B reakdown V oltage V ariation with T emperature 20 10 gFS , T rans conductance (S ) 24 18 12 6 0 0 3 6 9 V DS =5V 12 15 Is , S ource-drain current (A) 30 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 5 ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 m it 10 0m s V G S , G ate to S ource V oltage (V ) 4 3 2 1 0 0 VDS =-10V ID=6A 10 R DS (O N ) Li 10 ms 11 1s DC 0.1 0.03 VGS =4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 4 8 12 16 20 24 28 32 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T G 2507 DD -V ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T G 2507 6 S T G 2507 TSSOP-8 Tape and Reel Data TSSOP-8 Carrier Tape UNIT : P PACKAGE TSSOP 8 A0 6.08 B0 4.40 K0 1.60 D0 r1.50 + 0.1 - 0.0 D1 r1.50 + 0.1 - 0.0 E 12.00 O 0.3 E1 1.75 E2 5.50 O 0.05 P0 8.00 P1 4.00 P2 2.00 O0.05 T 0.30 O0.05 TSSOP-8 Reel UNIT : P TAPE SIZE 12 P REEL SIZE r330 M 330 N 100 W 12.5 W1 16.0 H r13.0 + 0.5 - 0.2 K 10.6 S 2.0 O0.5 G R V 7 |
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