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| AP4953M Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching D1 G2 S2 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 53m -5A SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 30 20 -5 -4 - 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 20020513 AP4953M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -30 -1 -0.1 53 90 -3 -1 -25 - V V/ m m V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A 6 20 3.5 2 12 20 45 27 800 425 110 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-5A VDS=-15V VGS=-10V VDS=-15V ID=-1A RG=6,VGS=-10V RD=15 VGS=0V VDS=-15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V Tj=25, IS=-1.7A, VGS=0V Min. Typ. Max. Units -1.67 -1.2 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on Min. copper pad. AP4953M 20 20 -10V -8.0V -6.0V 15 -10V -8.0V -6.0V 15 -ID , Drain Current (A) V GS =-4.0V 10 -ID , Drain Current (A) V GS =-4.0V 10 5 5 T C =25 o C 0 0 1 2 3 4 T C =150 o C 0 0 1 2 3 4 5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 1.8 I D =-5A T C =25 70 I D =5A 1.6 V GS =10V RDS(ON) (m ) 60 Normalized R DS(ON) 1.4 1.2 50 1.0 40 0.8 30 3 4 5 6 7 8 9 10 11 0.6 -50 0 50 100 150 -V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP4953M 6 3 5 2.5 -ID , Drain Current (A) 4 2 PD (W) 25 50 75 100 125 150 3 1.5 2 1 1 0.5 0 0 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( C) o Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 10 Normalized Thermal Response (R thja) 0.2 1ms -ID (A) 10ms 1 0.1 0.1 0.05 0.02 100ms 1s 0.1 0.01 PDM 0.01 Single Pulse t T Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=135 oC/W 10s T C =25 C Single Pulse o DC 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP4953M 14 10000 f=1.0MHz 12 I D = -5A V DS = -15V -VGS , Gate to Source Voltage (V) 10 1000 Ciss 8 C (pF) Coss 6 100 Crss 4 2 0 0 5 10 15 20 25 30 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100.00 3 10.00 2 1.00 VGS(th) (V) 1 0 T j =150 C -IS(A) o T j =25 C o 0.10 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 -V SD (V) T j , Junction Temperature ( C) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP4953M VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5 x RATED VDS RG G 10% S -10 V VGS VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG -10V D 0.5 x RATED VDS G S VGS QGS QGD I G ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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