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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF248 VHF push-pull power MOS transistor
Product specification September 1992
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Gold metallization ensures excellent reliability. DESCRIPTION
5 5 3
Top view
BLF248
PIN CONFIGURATION
1
halfpage
2
d2 g2 g1 d1
MBB157
s
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING - SOT262 A1 PIN 1 2 3 4 5 DESCRIPTION drain 1 drain 2 gate 1 gate 2 source
4
MSB008
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a push-pull common source test circuit. MODE OF OPERATION class-AB f (MHz) 225 175 VDS (V) 28 28 PL (W) 300 300 GP (dB) > 10 typ. 13 D (%) > 55 typ. 67
September 1992
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL VDS VGS ID Ptot Tstg PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature CONDITIONS - - - up to Tmb = 25 C total device; - both sections equally loaded -65 MIN.
BLF248
MAX. 65 20 25 500 150
UNIT V V A W C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS total device; both sections equally loaded. total device; both sections equally loaded. THERMAL RESISTANCE 0.35 K/W 0.15 K/W
102 handbook, halfpage ID (A)
(1) (2)
MRA933
MGP203
handbook, halfpage
600
Ptot (W) 400
(1) (2)
10
200
1 1 10 VDS (V) 102
0 0 50 100 Th (C) 150
(1) Current is this area may be limited by RDS(on). (2) Tmb = 25 C. Total device; both sections equally loaded.
(1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
CHARACTERISTICS (per section) Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) VGS gfs gfs1/gfs2 RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of both transistor sections forward transconductance forward transconductance ratio of both transistor sections drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 100 mA VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 100 mA; VDS = 10 V ID = 100 mA; VDS = 10 V ID = 8 A; VDS = 10 V ID = 8 A; VDS = 10 V ID = 8 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 2 - 5 0.9 - - - - -
BLF248
TYP. MAX. UNIT - - - - - 7.5 - 0.1 37 500 360 46 - 5 1 4.5 100 - 1.1 0.15 - - - - A pF pF pF V mA A V mV S
handbook, halfpage
0
MGP204
MGP205
T.C. (mV/K) -1
handbook, halfpage
60
ID (A) 40
-2
-3 20 -4
-5 10-1
1
ID (A)
10
0 0 5 10 15 VGS (V) 20
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values per section.
Fig.5
Drain current as a function of gate-source voltage, typical values per section.
September 1992
4
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
MGP207 MGP206
handbook, halfpage
200
handbook, halfpage
1500
RDS(on) (m)
C (pF)
1000
100 500 Cis Cos
0 0 0 50 100 Tj (C) 150 0 10 20 30 VDS (V) 40
ID = 8 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values per section.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values per section.
MGP208
handbook, halfpage
600
Crs (pF)
400
200
0 0 10 20 30 VDS (V) 40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values per section.
September 1992
5
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25 C; Rth mb-h = 0.15 K/W, unless otherwise specified. RF performance in a linear amplifier in a common source class-AB circuit. RGS = 536 per section; optimum load impedance per section = 0.79 - j0.11 . MODE OF OPERATION class-AB f (MHz) 225 175 Ruggedness in class-AB operation The BLF248 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 28 V; f = 225 MHz at rated output power. VDS (V) 28 28 PL (W) 300 300 GP (dB) > 10 typ. 11.5 typ. 13
BLF248
D (%) > 55 typ. 65 typ. 67
MGP209
MGP210
handbook, halfpage
20
80 D Th = 25 C 70 C D (%) 60
handbook, halfpage
400
Gp (dB) 15
PL (W) 300
Th = 25 C
Gp 10
25 C 70 C
70 C 40 200
5
20
100
0 0 100 200 300 PL (W)
0 400
0 0 10 20 30 PIN (W) 40
Class-AB operation; VDS = 28 V; IDQ = 2 x 250 mA; RGS = 536 (per section); ZL = 0.79 - j0.11 (per section); f = 225 MHz.
Class-AB operation; VDS = 28 V; IDQ = 2 x 250 mA; RGS = 536 (per section); ZL = 0.79 - j0.11 (per section); f = 225 MHz.
Fig.9
Power gain and efficiency as functions of load power, typical values.
Fig.10 Load power as a function of input power, typical values.
September 1992
6
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dbook, full pagewidth
September 1992
L1 C1 L4 50 input L2 C2 L3 L5
Philips Semiconductors
VHF push-pull power MOS transistor
VDD1 C16 C12 C17
R1
A
C8
R2 C9 C13 C6
R7
L12 C18
R3 D.U.T. L6 L8
L13 C25 L10 L16 L18 L20 C29 L22
C3
C4
C5
C22
C23
C24
C27
C28
L23
50 output
7
IC1 VDD1 R9 C34 f = 225 MHz.
L7
C30 L9 L11 R4 L17 C26 L14 C14 C19 L19 L21 L24
C7 C10
R5 A R8 C11 C20 C33 C15 L15
Product specification
R6 C32 C31
C21 VDD2
MGP211
BLF248
Fig.11 Test circuit for class-AB operation.
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
List of components (class-AB test circuit) COMPONENT C1, C2 DESCRIPTION multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor (note 1) electrolytic capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) stripline (note 2) semi-rigid cable (note 3) VALUE 2 x 56 pF + 18 pF in parallel, 500 V 2 to 9 pF 47 pF, 500 V 5 to 60 pF 1 nF, 500 V DIMENSIONS
BLF248
CATALOGUE NO.
C3 C4 C5 C6, C7, C9, C10, C12, C15, C31, C34 C8, C11, C16, C21, C32 C13, C14, C18, C19 C17, C20, C33 C22 C23 C24, C28 C25, C26 C27 C29, C30 L1, L3, L22, L24 L2, L23
2222 809 09005
2222 809 08003
100 nF, 50 V 510 pF, 500 V 10 F, 63 V 82 pF, 500 V 10 pF + 30 pF in parallel, 500 V 2 to 18 pF 39 pF + 47 pF in parallel, 500 V 18 pF, 500 V 3 x 100 pF in parallel, 500 V 50 50 4.8 x 80 mm ext. dia. 3.6 mm ext. conductor length 80 mm 6 x 32.5 mm 6 x 10.5 mm 6 x 3 mm
2222 852 47104
2222 809 09006
L4, L5 L6, L7, L10, L11 L8, L9 L12, L15 L13, L14
stripline (note 2) stripline (note 2) stripline (note 2) grade 3B Ferroxcube wide-band HF choke 2 turns enamelled 1.6 mm copper wire stripline (notes 2 and 4) stripline (notes 2 and 4) stripline (notes 2 and 4) 10 turns potentiometer 0.4 W metal film resistor
43 43 43 2 in parallel 25 nH
4312 020 36642 int. dia. 5 mm leads 2 x 7 mm space 2.5 mm 6 x 3 mm 6 x 35 mm 6 x 9 mm
L16, L17 L18, L19 L20, L21 R1, R6 R2, R5 September 1992
43 43 43 50 k 1 k 8
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
COMPONENT R3, R4 R7, R8 R9 IC1 Notes
DESCRIPTION 0.4 W metal film resistor 1 W metal film resistor 1 W metal film resistor 78L05 voltage regulator
VALUE 536 10 5% 3.16 k
DIMENSIONS
CATALOGUE NO.
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. L1, L3 - L11, L16 - L22 and L24 are micro-striplines on a double copper-clad printed circuit board, with glass microfibre PTFE dielectric (r = 2.2), thickness 116 inch, thickness of copper sheet 2 x 35 m. 3. L2 and L23 are soldered on striplines L1 and L24 respectively. 4. A copper strap, thickness 0.8 mm, is soldered on striplines L16 - L21.
September 1992
9
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
handbook, full pagewidth
119
130
100
R9 +VDD1 C34 L1 L2
IC1
to R1, R6 C31 C32 C33 slider R1 R2 C9
C13 C18 L12 R7 L12 L13 C6
C12
C16 C17 L22 +VDD1
C8 R3 L4 hollow rivets C3 C2 R5 C11 L5 C5
hollow rivet C1 L8 L6 C4 L7 R4 L9 L10 C25 L16 C23 C24 L17 C26 C29 L18 C27 L19 L20 C28 L21 C30 hollow rivets
C22
L11
C10 L14 C7 L15 R8 C19 L15 C14 C15
+VDD2 L24
L3
slider R6
L23 C20 C21 copper strap
copper strap
MGP213
The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets. Dimensions in mm.
Fig.12 Component layout for 225 MHz class-AB test circuit.
September 1992
10
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF248
MGP218
handbook, halfpage
5
handbook, halfpage
3
MGP217
Zi ()
ri
ZL () 2 RL
0 xi -5
1 -10 0 -15 XL
-20
-1 0 50 100 150 200 250 f (MHz) 0 50 100 150 200 250 f (MHz)
Class-AB operation; VDS = 28 V; ID = 2 x 250 mA; RGS = 536 (per section); PL = 300 W (total device); Th = 25 C.
Class-AB operation; VDS = 28 V; ID = 2 x 250 mA; RGS = 536 (per section); PL = 300 W (total device); Th = 25 C.
Fig.13 Input impedance as a function of frequency (series components), typical values per section.
Fig.14 Load impedance as a function of frequency (series components), typical values per section.
handbook, halfpage
40
MGP216
Gp (dB) 30
20
10
0 0 50 100 150 200 250 f (MHz)
Class-AB operation; VDS = 28 V; ID = 2 x 250 mA; RGS = 536 (per section); PL = 300 W (total device); Th = 25 C.
Fig.15 Power gain as a function of frequency, typical values per section.
September 1992
11
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads
BLF248
SOT262A1
D
A F
U1 q H1 C w2 M C
B
c
1
2
H
U2
p
E1 w1 M A B
E
5
A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.77 5.00 0.227 0.197 b 5.85 5.58 c 0.16 0.10 D e E E1 F 1.78 1.52 0.070 0.060 H 20.58 20.06 0.81 0.79 H1 17.02 16.51 0.67 0.65 p 3.28 3.02 0.129 0.119 Q 2.85 2.59 q 27.94 U1 34.17 33.90 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.51 0.02 w2 1.02 0.04 w3 0.25 0.01
21.98 10.27 10.29 11.05 21.71 10.05 10.03 0.865 0.404 0.405 0.435 0.855 0.396 0.395
0.230 0.006 0.220 0.004
0.112 1.100 0.102
OUTLINE VERSION SOT262A1
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1992
12
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF248
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1992
13

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