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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20030/D The RF Sub-Micron Bipolar Line RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-emitter class A and class AB amplifier applications. Suitable for frequency modulated, amplitude modulated and multi-carrier base station RF power amplifiers. * Specified 26 Volts, 2.0 GHz, Class AB, Two-Tones Characteristics Output Power -- 30 Watts (PEP) Power Gain -- 9.8 dB Efficiency -- 34% Intermodulation Distortion -- -28 dBc * Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics Output Power -- 30 Watts Power Gain -- 10.5 dB Efficiency -- 40% * Excellent Thermal Stability * Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP) Output Power * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Designed for FM, TDMA, CDMA, and Multi-Carrier Applications MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage (RBE = 100 ) Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VCBO VCER VEB IC PD Tstg TJ Rating Thermal Resistance, Junction to Case (1) (1) Thermal resistance is determined under specified RF operating condition. Symbol RJC MRF20030 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR CASE 395D-03, STYLE 1 Value 25 60 60 30 -3 4 125 0.71 - 65 to +150 200 Unit Vdc Vdc Vdc Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Max 1.4 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO 25 60 60 26 70 70 -- -- -- Vdc Vdc Vdc REV 1 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MRF20030 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Emitter-Base Breakdown Voltage (IB = 5 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) V(BR)EBO ICES 3 -- 3.8 -- -- 10 Vdc mAdc ON CHARACTERISTICS DC Current Gain (VCE = 5 Vdc, ICE = 1 Adc) hFE 20 40 80 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) Cob -- 28 -- pF FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts, ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Load Mismatch (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gpe 9.8 10.5 -- dB 34 38 -- % IMD -- - 33 - 28 dBc IRL 10 17 -- dB No Degradation in Output Power Gpe -- 10.5 -- dB -- 34 -- % IMD -- - 35 -- dBc IRL -- 14 -- dB GUARANTEED BUT NOT TESTED (In Motorola Test Fixture) Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts, ICQ = 125 mA, f = 1880 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz) Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz) Output Mismatch Stress (VCC = 25 Vdc, Pout = 30 Watts, ICQ = 125 mA, f = 1880 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test) (1) For Information Only. This Part Is Collector Matched. Gpe IRL -- -- -- 10.5 40 14 -- -- -- dB % dB Typically No Degradation in Output Power MRF20030 2 MOTOROLA RF DEVICE DATA VBB R1 R2 Q2 L1 B1 C6 Q1 C1 R3 R4 C2 + R5 R6 C7 C9 R7 R8 C13 C14 C8 + B2 L4 VCC D1 L4 L2 Z5 RF INPUT Z1 C3 Z2 C4 Z3 C5 Z4 DUT C10 C11 C12 Z6 Z7 Z8 RF OUT B1, B2 C1, C13 C2 C3, C5, C12 C4, C11 C6, C8 C7, C9 C10 C14 D1 L1, L4 L2, L3 Ferrite Bead, P/N 5659065/3B, Ferroxcube 0.1 F, Chip Capacitor, Kermet 100 F, 50 V, Electrolytic Capacitor, Mallory 0.6-4 pF, Variable Capacitor, Johanson, Gigatrim 10 pF, B Case Chip Capacitor, ATC 24 pF, B Case Chip Capacitor, ATC 75 pF, B Case Chip Capacitor, ATC 0.4-2.5 pF, Variable Capacitor, Johanson, Gigatrim 470 F, 63 V, Electrolytic Capacitor, Mallory Diode, Motorola (MUR3160T3) 12 Turns, 22 AWG, IDIA. 0.195 0.750 20 AWG N1, N2 R1, R2 R3, R4 R5, R8 R6, R7 Q1 Q2 Board Type N Flange Mount RF Connector MA/COM 3052-1648-10 130 , 1/8 W Chip Resistor, Rohm 100 , 1/8 W Chip Resistor, Rohm 10 , 1/2 W Resistor 10 , 1/8 W Chip Resistor, Rohm (10J) Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) 30 Mil Glass Teflon(R), Arlon GX-0300-55-22, r = 2.55 Figure 1. Class AB Test Fixture Electrical Schematic MOTOROLA RF DEVICE DATA MRF20030 3 Vsupply + R1 C2 R5 R2 Q1 R3 Q2 VCC VCC R4 R6 R8 B2 C8 C11 C12 R9 C14 + C15 + R7 B1 C6 C5 L1 N1 RF INPUT Z1 C1 Z2 Z3 C4 C3 C7 L2 C10 Z6 Z7 C9 Z8 Z9 Z10 C13 N2 RF OUTPUT Z4 Z5 DUT B1, B2 C1, C9, C13 C2, C8 C3, C10 C4 C5, C11 C6, C14 C7, C12 C15 L1, L2 N1, N2 Long Bead, Fair Rite 0.6-4 pF, Variable Capacitor, Johanson, Gigatrim 100 F, 50 V, Electrolytic Capacitor, Mallory 18 pF B Case Chip Capacitor, ATC 1.3 pF, B Case Chip Capacitor, ATC 24 pF, B Case Chip Capacitor, ATC 0.1 mF, Chip Capacitor, Kermet 75 pF, B Case Chip Capacitor, ATC 470 mF, 63 V, Electrolytic Capacitor, Mallory 0.75 in., 20 AWG Type N Flange Mount RF Connector, MA/COM Q1 Q2 R1 R2 R3 R4 R5 R6 R7, R9 R8 Board Transistor, NPN, Motorola (BD135) Transistor, PNP, Motorola (BD136) 250 W, Chip Resistor, 1/8 Watt, Rohm 500 W, 1/4 Watt, Potentiometer 4.7 kW, Chip Resistor, 1/8 Watt, Rohm 2 x 4.7 kW, Chip Resistor, 1/8 Watt, Rohm 1.0 W, 10 Watt, Resistor, DALE 39 W, 1 Watt, Resistor 4 x 39 W, Chip Resistors, 1/8 Watt, Rohm 75 W, Chip Resistor, 1/8 Watt, Rohm 30 Mil Glass Teflon(R), Arlon GX-0300-55-22, r = 2.55 Figure 2. Class A Test Fixture Electrical Schematic MRF20030 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 35 Pout , OUTPUT POWER (WATTS) 30 Pout 25 20 Gpe 15 10 5 0 0 1 3 2 Pin, INPUT POWER (WATTS) 4 VCC = 26 Vdc ICQ = 125 mA f = 2000 MHz Single Tone 10.5 G pe , GAIN (dB) 10 9.5 9 8.5 8 5 11.5 Pout , OUTPUT POWER (WATTS) 11 40 35 30 25 20 15 10 5 0 1800 1850 1900 f, FREQUENCY (MHz) VCC = 26 Vdc ICQ = 125 mA 1950 2000 1.5 W Pin = 3.5 W 2.5 W Figure 3. Output Power & Power Gain versus Input Power Figure 4. Output Power versus Frequency IMD, INTERMODULATION DISTORTION (dBc) 11 - 30 3rd Order 10.5 G pe , GAIN (dB) 5th Order 7th Order VCC = 26 Vdc ICQ = 125 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 0 5 30 15 25 20 Pout, OUTPUT POWER (WATTS) PEP 10 35 40 10 9.5 9 8.5 8 7.5 18 20 Pout = 30 W (PEP) ICQ = 125 mA f1 = 2000.0 MHz f2 = 2000.1 MHz IMD Gpe -10 -15 -20 -25 -30 -35 -40 -45 28 - 40 - 50 - 60 - 70 24 26 22 VCC, COLLECTOR SUPPLY VOLTAGE (Vdc) Figure 5. Intermodulation Distortion versus Output Power Figure 6. Power Gain and Intermodulation Distortion versus Supply Voltage IMD, INTERMODULATION DISTORTION (dBc) - 25 - 30 12 11 G pe , POWER GAIN (dB) ICQ = 75 mA 10 9 125 mA 8 7 6 10 100 5 0.01 75 mA 0.1 1.0 VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 10 100 ICQ = 400 mA 250 mA - 35 - 40 - 45 125 mA - 50 250 mA - 55 400 mA - 60 0.01 0.1 VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 1.0 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power Figure 8. Power Gain versus Output Power MOTOROLA RF DEVICE DATA MRF20030 5 IMD, INTERMODULATION DISTORTION (dBc) - 20 11.5 -5 4 IC, COLLECTOR CURRENT (Adc) 3.5 MTBF LIMITED 3 2.5 2 1.5 1 0.5 0 0 4 8 12 16 20 24 VCE, COLLECTOR SUPPLY VOLTAGE (Vdc) TJ = 175C Tflange = 100C BREAKDOWN LIMITED Tflange = 75C 11 Pout = 30 W (PEP) VCC = 26 Vdc ICQ = 125 mA 38 Gpe 36 10.5 G pe , GAIN (dB) COLLECTOR EFFICIENCY (%) INPUT VSWR 10 9.5 VSWR 34 1.7:1 32 28 9 1800 1850 1900 f, FREQUENCY (MHz) 1950 28 2000 1.1:1 Figure 9. DC Class A Safe Operating Area Figure 10. Performance in Broadband Circuit 60 MTBF FACTOR (HOURS x AMPS 2 ) 50 Pout , OUTPUT POWER (dBm) 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (C) 250 40 FUNDAMENTAL 20 0 3rd Order VCC = 24 Vdc ICQ = 1.8 Adc f1 = 2000.0 MHz f2 = 2000.1 MHz 40 - 20 - 40 0 10 20 30 Pin, INPUT POWER (dBm) Figure 11. Class A Third Order Intercept Point This above graph displays calculated MTBF in hours x ampere2 emitter current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by IC2 for MTBF in a particular application. Figure 12. MTBF Factor versus Junction Temperature MRF20030 6 MOTOROLA RF DEVICE DATA + j1 + j0.5 + j2 f = 1.8 GHz 1.85 GHz + j0.2 Zo = 10 + j3 Zin 1.95 GHz 2 GHz ZOL* 1.95 GHz 1.9 GHz 0.2 1.9 GHz f = 1.8 GHz 1.85 GHz 0.5 1 2 3 5 + j5 + j10 0.0 - j10 - j0.2 - j5 - j3 - j0.5 - j2 - j1 VCC = 26 V, ICQ = 125 mA, Pout = 30 W (PEP) f MHz 1800 1850 1900 1950 2000 Zin(1) 4.5 + j7.0 4.5 + j6.0 4.5 + j4.6 3.7 + j2.4 3.5 + j1.5 ZOL* 4.7 + j2.4 4.4 + j1.6 3.4 + j1.2 3.3 + j1.6 3.5 + j2.0 Zin(1)= Conjugate of fixture base impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 13. Series Equivalent Input and Output Impedence MOTOROLA RF DEVICE DATA MRF20030 7 Table 1. Common Emitter S-Parameters at VCE = 24 Vdc, IC = 1.8 Adc f GHz GH 1.5 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 2.35 2.4 2.45 2.5 S11 |S11| .964 .960 .952 .933 .892 .804 .727 .787 .873 .921 .941 .943 .940 .928 .917 .907 .888 .861 .853 .860 .880 f 158 156 155 153 149 149 157 163 163 160 157 155 153 151 150 150 148 148 149 146 146 S21 |S21| .65 .74 .87 1.05 1.32 1.64 1.78 1.50 1.14 .84 .62 .48 .38 .30 .24 .20 .17 .14 .11 .10 .10 f 74 68 60 50 35 13 -18 -50 -73 -89 -102 -109 -118 -127 -133 -140 -150 -159 -167 -176 156 S12 |S12| .046 .047 .049 .048 .047 .040 .026 .015 .020 .026 .031 .036 .040 .042 .049 .056 .066 .077 .087 .095 .119 f 60 56 53 46 40 29 21 54 81 88 93 93 92 97 99 101 100 98 92 89 84 S22 |S22| .859 .841 .815 .787 .744 .719 .778 .883 .937 .949 .950 .946 .942 .939 .935 .933 .926 .916 .909 .900 .880 f 161 161 160 161 163 168 175 174 171 168 165 164 163 162 161 160 159 157 157 155 155 MRF20030 8 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS -A- U 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.215 0.225 0.060 0.070 0.084 0.096 0.004 0.006 0.178 0.208 0.315 0.330 0.125 0.135 0.560 BSC 0.035 0.045 MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 5.46 5.72 1.52 1.78 2.13 2.44 0.10 0.15 4.52 5.28 8.00 8.38 3.18 3.42 14.23 BSC 0.89 1.14 W -B- 3 K 2 PL 2 D Q 2 PL 0.51 (0.020) M TA M B M DIM A B C D E H J K N Q U W N J H E C -T- SEATING PLANE STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 395D-03 ISSUE B MOTOROLA RF DEVICE DATA MRF20030 9 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps MRF20030 10 MRF20030/D MOTOROLA RF DEVICE DATA |
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