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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION BAV99 SMALL SIGNAL DIODE FEATURES * Silicon epitaxial planar diode * Fast switching * Surface mounting device SOT-23 .040 (1.02) .035 (0.88) .017 (0.42) .015 (0.38) MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 .110 (2.80) .079 (2.00) .118 (3.00) (C) (A) (B) * Weight : apporx. 0.008g .071 (1.80) (C) (A) .055 (1.40) .047 (1.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .045 (1.15) .033 (0.85) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) RATINGS Repetitive Peak Reverse Voltage Forward Continuous Current at T A=25 C Repetitive Peak Forward Current at T A=25 o C Surge Forward Current at tp < 1 S, at TA=25 oC Total Power Dissipation Junction Temperature Storage Temperature Range o SYMBOL VRRM IF IFRM IFSM PD TJ TSTG .006 (0.14) .003 (0.08) .102 (2.60) .094 (2.40) R0.05 (.002) .028 (0.70) .020 (0.50) BAV99 70 150 500 1000 250 125 -65 to + 150 UNITS Volts mA mA mA mW 0 C C 0 2001-12 ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Reverse Breakdown Voltage SYMBOL V(BR)R VF(1) VF(2) Forward Voltage VF(3) VF(4) Reverse Current Total Capacitance Reverse Recovery Time IR CT Trr 1000 1250 2.5 1.5 6 mV mV uA pF nS IF=50mA If=150mA Vr=70V Vr=0V,F=1MHZ If=Ir=10mA,RL=100 ohm, measured at ir=1mA Value 70 715 855 Unit V mV mV Ir=100uA If=1mA If=10mA Testing Condition CHARACTERISTIC CURVES FIG. 1 - FORWARD CURRENT & FORWARD VOLTAGE 500 200 FORWARD CURRENT, iF(mA) DIODE CAPACITANCE,Cd (pF) 400 300 100 60 40 20 10 6 4 2 1 .1 0 400 800 1200 1600 2000 FORWARD VOLTAGE,VF (mV ) .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE, ( V ) 40 100 FIG. 2 - DIODE CAPACITANCE 200 100 0 RECTRON |
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