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MITSUBISHI SEMICONDUCTOR
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION M54585KP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
NC
1 20
NC
IN1 2 IN2 3 IN3 4 IN4 5 INPUT IN5 6 IN6 7 IN7 8 IN8 9 GND
10
19 O1 18 O2 17 O3 16 O4 15 O5 14 O6 13 O7 12 O8 11 COM COMMON
OUTPUT
FEATURES q High breakdown voltage (BVCEO 50V) q High-current driving (IC(max) = 500mA) q With clamping diodes q Driving available with TTL output or with PMOS IC output q With shrink small outline package
NC : No connection
Package type 20P2E-A
CIRCUIT DIAGRAM
COM
APPLICATION Drives of relays and printers, digit drives of indication elements such as LEDs and lamps, and MOS-bipolar logic IC interfaces
OUTPUT 2.7k INPUT
7.2k
3k
GND
FUNCTION The M54585KP has eight circuits, which are NPN Darlington transistors. Input transistors have resistance of 2.7k between the base and input pin. A spike-killer clamping diode is provided between each output pin and GND. Output transistor emitters are all connected to the GND pin. Collector current is 500mA maximum. The maximum collector-emitter voltage is 50V.
The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current
(Unless otherwise noted, Ta = -20 ~ +75C)
Conditions Output, H Current per circuit output, L
Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board
Ratings -0.5 ~ +50 500 -0.5 ~ +30 500 50 0.68 -20 ~ +75 -55 ~ +125
Unit V mA V mA V W C C
Jan. 2000
MITSUBISHI SEMICONDUCTOR
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -20 ~ +75C)
Symbol VO Parameter Output voltage Collector current (Current per 1 cir- Duty Cycle 10% cuit when 8 circuits are coming on siDuty Cycle 50% multaneously) Ic 400mA "H" input voltage Ic 200mA "L" input voltage Limits min 0 0 0 3.85 3.4 0 typ -- -- -- -- -- -- max 50 200 mA 70 30 30 0.6 V V V Unit V
IC
VIH VIL
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = -20 ~ +75C)
Symbol V (BR) CEO VCE(sat) II VF IR hFE Parameter Collector-emitter breakdown voltage Test conditions min 50 -- -- -- -- -- -- 1000 Limits typ+ -- 1.3 1.0 0.95 8.7 1.5 -- 2500 max -- 2.4 1.6 1.8 18 2.4 100 -- Unit V V mA V A --
ICEO = 100A VI = 3.85V, IC = 400mA Collector-emitter saturation voltage VI = 3.4V, IC = 200mA II = 3.85V Input current VI = 25V Clamping diode forward voltage IF = 400mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 4V, IC = 350mA, Ta = 25C
+ : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C)
Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 12 240 max -- -- Unit ns ns
NOTE 1 TEST CIRCUIT
INPUT Vo
TIMING DIAGRAM
50%
50%
Measured device OPEN PG
RL OUTPUT
INPUT
OUTPUT
50
CL
50%
50%
ton
toff
(1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50, VI = 3.85V (2)Input-output conditions : RL = 25, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
Jan. 2000
MITSUBISHI SEMICONDUCTOR
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage Collector Current Characteristics 500
VI = 3.4V
Thermal Derating Factor Characteristics 1.0
Power dissipation Pd (W)
0.68
0.6
0.408
Collector current Ic (mA)
0.8
400
300
0.4 0.2
200
Ta = 25C
100
Ta = 75C
Ta = -20C
0
0
25
50
75
100
0
0
0.5
1.0
1.5
2.0
Ambient temperature Ta (C) Duty Cycle-Collector Characteristics 500 500
Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics
Collector current Ic (mA)
1
Collector current Ic (mA)
400
400
300 200
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit.
300
1
2 3 4 5 6 7 8
*Ta = 25C
200
2 3 45 67 8
100
100
0
0
20
40
60
80
100
0
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C
0
20
40
60
80
100
Duty cycle (%) DC Amplification Factor Collector Current Characteristics
VCE = 4V
Duty cycle (%)
Grounded Emitter Transfer Characteristics 500
VCE = 4V
104 DC amplification factor hFE
7 5 3 2
Ta = 75C
Collector current Ic (mA)
400
300
103
7 5 3 2 Ta = -20C Ta = 25C
200
Ta = 75C Ta = 25C Ta = -20C
100
102 101
2
3
5 7 102
2
3
5 7 103
0
0
1
2
3
4
Collector current Ic (mA)
Input voltage VI (V)
Jan. 2000
MITSUBISHI SEMICONDUCTOR
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Input Characteristics 10 500
Clamping Diode Characteristics
Forward bias current IF (mA)
Ta = -20C
8
400
Input current II (mA)
6
Ta = 25C Ta = 75C
300
4
200
Ta = 25C
2
100
Ta = 75C Ta = -20C
0
0
5
10
15
20
25
0 0 0.5 1.0 1.5 2.0
Input voltage VI (V)
Forward bias voltage VF (V)
Jan. 2000

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