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| 2SC5706 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features: * Large current capacitance * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(Ta=25C) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Base Current Total Device Disspation TA = 25C TC = 25C Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC(DC) IC(Pulse) IB PD Tj Tstg Value 80 80 50 6 5 7.5 1.2 0.8 15 +150 -55 to +150 Unit V V V V A A W C C Device Marking 2SC5706 = 5706 WEITRON http://www.weitron.com.tw 1/5 25-Aug-05 2SC5706 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=10A, IE=0 Collector-Emitter Breakdown Voltage IC=100A, RBE=0 Collector-Emitter Breakdown Voltage IC=1mA, RBE= Emitter-Base Breakdown Voltage IE=10A, IC=0 Collector Cut-Off Current VCB=40V, IE=0 Emitter-Cut-Off Current VEB=4V, IC=0 Symbol BVCBO BVCES BVCEO BVEBO ICBO IEBO Min 80 80 50 6 Max Max 1 1 Unit V V V V A A ON CHARACTERISTICS(1) DC Current Gain VCE=2V, IC=500mA Collector-Emitter Saturation Voltage IC=1A, IB=50mA IC=2A, IB=100mA Base-Emitter Saturation Voltage IC=2A, IB=100mA Note 1.Pulse Test : Pulse width < 300s, Duty cycle 20%. DYNAMIC CHARACTERISTICS Transition Frequency VCE=10V, IC=500 Output Capacitance VCB=10V, f=1MHz hFE VCE(sat) VBE(sat) 200 - - 560 135 240 1.2 mV V fT Cob - 400 15 - MHz pF SWITCHING TIMES See specified test circuit (Turn-On Time) See specified test circuit (Storage Time) See specified test circuit (Fall Time) ton tstg tf 35 300 20 ns WEITRON http://www.weitron.com.tw 2/5 25-Aug-05 2SC5706 Switching Time Test Circuit PW=20s D.C. 1% INPUT VR 50 100F 470F IB1 IB2 RB + + OUTPUT 25 VBE=-5V 10IB1 = -10IB2 = IC = 1A VCC=25V Characteristics Curve 5 Collector Current, IC(A) Collector Current, IC (A) 90m 4 3 8 A 0m 70mA 60mA 50mA 40mA 30mA 20mA 4.0 3.5 3.0 2.5 2.0 1.5 25C -25C Ta=7 5 VCE=2V A A 2 1 0 100m 10mA 5mA 1.0 0.5 0 0 0.2 0.4 IB=0 0 0.4 0.8 1.0 1.2 1.4 0.6 C 0.8 1.0 1.2 1.4 1000 Collector-to-Emitter Saturation Voltage, VCE(sat) (mV) Collector-to-Emitter Voltage, VCE(V) FIG.1 IC - VCE VCE=2V Base-to-Emitter Voltage, VBE (V) FIG.2 IC - VBE 1000 DC Current Gain, hFE Ta=75C 25C -25C IC / IB = 20 100 100 = Ta -25 75 C C 25 C 10 0.01 Collector Current, IC (A) FIG.3 hFE - IC 0.1 1.0 10 10 0.01 0.1 1.0 10 Collector Current, IC (A) FIG.4 VCE(sat) - IC Base-to-Emitter Saturation Voltage, VBE(sat) (V) 10 Collector-to-Emitter Saturation Voltage, VCE(sat) (mV) 10000 IC / IB = 50 IC / IB = 50 1000 1.0 Ta=-25C 100 7 Ta= 5C 75C 25C C -25 25C 10 0.01 Collector Current, IC (A) FIG.5 VCE(sat) - IC 0.1 1.0 10 0.1 0.01 Collector Current, IC (A) FIG.6 VBE(sat) - IC 0.1 1.0 10 WEITRON http://www.weitron.com.tw 3/5 25-Aug-05 2SC5706 Gain-Bandwidth Product, fT - MHz Output Capacitance, Cob (pF) 1000 f = 1MHz 100 1000 VCE=10V 100 100 10 0.1 0.1 10 100 10 0.01 0.1 1.0 10 Collector-to-Base Voltage, VCB (V) FIG.7 Cob - VCB 100ms Collector Current, IC (A) FIG.8 fT - IC Collector Current, IC (A) 10 ICP = 7.5A IC = 5A 1.0 DC 10ms 1ms 10 Collector Dissipation, PC (W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 No he at sin DC op 0 10 0 s s op er er at io ati n( on T (T c =2 a =2 5 0.1 TC = 25C Single Puls 0.01 0.1 1.0 5C C) k ) 10 100 Collector-to-Base Voltage, VCB (V) FIG.9 ASO 18 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta (C) FIG.9 PC - Ta Collector Dissipation, PC (W) Case Temperature, TC (C) FIG.10 PC - TC WEITRON http://www.weitron.com.tw 4/5 25-Aug-05 2SC5706 D-PAK Outline Dimensions D-PAK(TO-252) E A 4 unit:mm D-PAK G H J Dim A B C D E G H J K L M Min 1 2 3 B M D C L K 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 Max WEITRON http://www.weitron.com.tw 5/5 25-Aug-05 |
Price & Availability of 2SC5706
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