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| AP4500GM Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching D1 G2 S2 D2 D1 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 20V 30m 6A -20V 50m -5A SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 20 12 6 4.8 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -20 12 -5 -4 -20 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200609031 AP4500GM N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 20 0.5 0.037 30 45 1.2 1 25 15 480 - V V/ m m V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A 18.5 9 1.8 4.2 29 65 60 50 300 255 115 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VDS=16V, VGS=0V VGS=12V ID=6A VDS=10V VGS=4.5V VDS=10V ID=1A RG=6,VGS=4.5V RD=10 VGS=0V VDS=8V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.7A, VGS=0V IS=6A, VGS=0V, dI/dt=100A/s Min. Typ. Max. Units 26 17 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge AP4500GM P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=250uA 2 Min. Typ. Max. Units -20 -0.5 -0.037 50 90 -1 -1 -25 20 - V V/ m m V S uA uA nC nC nC ns ns ns ns pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-4.5V, ID=-2.2A VGS=-2.5V, ID=-1.8A VDS=VGS, ID=-250uA VDS=-10V, ID=-2.2A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= 12V ID=-5A VDS=-16V VGS=-4.5V VDS=-10V ID=-2.2A RG=6,VGS=-10V RD=4.5 VGS=0V VDS=-20V f=1.0MHz 2.5 14 2 5.6 10 11 58 38 400 160 Gate-Source Leakage Total Gate Charge 2 100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 940 1500 pF Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.8A, VGS=0V IS=-2.2A, VGS=0V, dI/dt=100A/s Min. Typ. Max. Units 25 21 -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on Min. copper pad. AP4500GM N-Channel 25 25 T A =25 o C ID , Drain Current (A) 20 ID , Drain Current (A) 4.5V 3.5V 3.0V 2.5V T A =150 o C 20 4.5V 3.5V 3.0V 2.5V 15 15 10 10 V GS =2.0V 5 V GS =2.0V 5 0 0 1 2 3 4 5 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 45 1.8 40 I D =6A T A =25 o C Normalized RDS(ON) 1.6 I D =6A V GS =4.5V 1.4 RDS(ON) (m ) 35 1.2 30 1.0 25 0.8 20 2 3 4 5 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 100.00 10.00 1 1.00 T j =150 o C T j =25 o C VGS(th) (V) 0.5 0 -50 IS(A) 0.10 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 V SD (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4500GM N-Channel f=1.0MHz 6 1000 5 VGS , Gate to Source Voltage (V) I D =6A V DS =10V 4 Ciss C (pF) Coss 100 3 2 Crss 1 0 10 0 2 4 6 8 10 12 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty Factor = 0.5 10 0.2 1ms ID (A) 10ms 1 0.1 0.1 0.05 100ms 1s 0.1 0.02 0.01 PDM 0.01 t T Single Pulse T A =25 C Single Pulse o 10s DC Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135o C/W 0.01 0.001 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP4500GM P-Channel 25 25 T A =25 o C 20 -ID , Drain Current (A) -ID , Drain Current (A) 4.5V 4.0V 3.5V 3.0V T A =150 o C 20 4.5V 4.0V 3.5V 3.0V 15 15 10 V GS =2. 5 V 10 V GS =2. 5 V 5 5 0 0 1 2 3 4 5 0 0 1 2 3 4 5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1.8 90 I D =-2.2A T A =25 Normalized RDS(ON) 1.6 I D =-2.2A V GS = -4.5V 80 1.4 RDS(ON) (m ) 70 1.2 60 1 50 0.8 40 30 0.6 2 3 4 5 -50 0 50 100 150 -V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 100.00 0.8 10.00 1.00 T j =150 o C T j =25 o C -VGS(th) (V) 1.3 1.5 0.6 -IS(A) 0.4 0.10 0.2 0.01 0 0.1 0.3 0.5 0.7 0.9 1.1 -50 0 50 100 150 -V SD (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4500GM P-Channel f=1.0MHz 6 10000 -VGS , Gate to Source Voltage (V) 5 I D =-5A V DS =-16V 1000 4 Ciss Coss Crss 3 C (pF) 100 10 1 2 1 0 0 4 8 12 16 20 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty Factor = 0.5 10 1ms 10ms Normalized Thermal Response (R thja) 0.2 0.1 0.1 -ID (A) 0.05 1 100ms 1s 0.02 0.01 PDM 0.01 t T Single Pulse 0.1 T A =25 C Single Pulse 0.01 o 10s DC Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W 0.001 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS (V) t , Pulse Width (s) Fig9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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