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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2206 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features * * * * * * 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 4LSL (M115) Epoxy Sealed DESCRIPTION: The MS2206 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol PDISS VCE TJ IC T STG Parameter Power Dissipation Collector-Emitter Bias Voltage Junction Temperature Device Current Storage Temperature Value 7.5 37 200 1.0 -65 to +200 Unit W V C A C Thermal Data RTH(J-C) Junction-case Thermal Resistance* 35 C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2206 ELECTRICAL SPECIFICATIONS (Tcase = 25 C) 25 Symbol BVCBO BVCEO BVEBO ICES HFE IC = 1 mA IC = 5 mA IE = 1.0 mA VCE = 35 V VCE = 5 V STATIC Test Conditions IE = 0 mA IB = 0mA IC = 0 mA IC = 100 mA Min. 45 20 3.5 --20 Value Typ. ----------- Max. ------1.0 120 Unit V V V mA --- DYNAMIC Symbol POUT GP Test Conditions f =1025 - 1150 MHz f =1025 - 1150 MHz PIN = 400mW PIN = 400mW VCE =35V VCE =35V Min. 4 10 Value Typ. ----- Max. ----- Unit W dB Conditions: Pulse Width = 10 s Duty Cycle = 1% Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2206 PACKAGE MECHANICAL DATA Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. |
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