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| VISHAY SFH601 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features * * * * * * * * Isolation Test Voltage (1.0 s), 5300 VRMS VCEsat 0.25 ( 0.4) V, IF = 10 mA, IC = 2.5 mA Built to conform to VDE Requirements Highest Quality Premium Device Long Term Stability Storage Temperature, - 55 to + 150 C Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A C NC 1 2 3 6B 5C 4E e3 i179004 Pb Pb-free Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * CSA 93751 * BSI IEC60950 IEC60065 Order Information Part SFH601-1 SFH601-2 SFH601-3 SFH601-4 SFH601-1X006 SFH601-1X007 SFH601-1X009 SFH601-2X006 SFH601-2X007 SFH601-2X009 SFH601-3X006 SFH601-3X007 SFH601-3X009 SFH601-4X006 SFH601-4X007 SFH601-4X009 Remarks CTR 40 - 80 %, DIP-6 CTR 63 - 125 %, DIP-6 CTR 100 - 200 %, DIP-6 CTR 160 - 320 %, DIP-6 CTR 40 - 80 %, DIP-6 400 mil (option 6) CTR 40 - 80 %, SMD-6 (option 7) CTR 40 - 80 %, SMD-6 (option 9) CTR 63 - 125 %, DIP-6 400 mil (option 6) CTR 63 - 125 %, SMD-6 (option 7) CTR 63 - 125 %, SMD-6 (option 9) CTR 100 - 200 %, DIP-6 400 mil (option 6) CTR 100 - 200 %, SMD-6 (option 7) CTR 100 - 200 %, SMD-6 (option 9) CTR 160 - 320 %, DIP-6 400 mil (option 6) CTR 160 - 320 %, SMD-6 (option 7) CTR 160 - 320 %, SMD-6 (option 9) Description The SFH601 is an optocoupler with a Gallium Arsenide LED emitter which is optically coupled with a silicon planar phototransistor detector. The component is packaged in a plastic plug-in case 20 AB DIN 41866. The coupler transmits signals between two electrically isolated circuits. For additional information on the available options refer to Option Information. Document Number 83663 Rev. 1.4, 26-Oct-04 www.vishay.com 1 SFH601 Vishay Semiconductors Absolute Maximum Ratings VISHAY Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage DC forward current Surge forward current Total power dissipation t =10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit V mA A mW Output Parameter Collector-emitter voltage Emitter-base voltage Collector current t = 1.0 ms Power dissipation Test condition Symbol VCE VEBO IC IC Pdiss Value 100 7.0 50 100 150 Unit V V mA mA mW Coupler Parameter Isolation test voltage 1) Creepage Clearance Isolation thickness between emitter and detector Comparative tracking 2) Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Junction temperature Soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tj Tsld t = 1.0 s Test condition Symbol VISO Value 5300 7.0 7.0 0.4 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260 C C C C Unit VRMS mm mm mm 1) 2) between emitter and detector referred to climate DIN 40046, part 2, Nov. 74 index per DIN IEC 60112/VDE0303, part 1 www.vishay.com 2 Document Number 83663 Rev. 1.4, 26-Oct-04 VISHAY Electrical Characteristics SFH601 Vishay Semiconductors Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Breakdown voltage Reverse current Capacitance Thermal resistance Test condition IF = 60 mA IR = 10 A VR = 6.0 V VF = 0 V, f = 1.0 MHz Symbol VF VBR IR CO Rthja 6.0 0.01 25 750 10 Min Typ. 1.25 Max 1.65 Unit V V A pF K/W Output Parameter Collector-emitter capacitance Collector - base capacitance Emitter - base capacitance Thermal resistance Collector-emitter leakage current VCE = 10 V SFH601-1 SFH601-2 SFH601-3 SFH601-4 Test condition f = 1.0 MHz, VCE = 5.0 V f = 1.0 MHz, VCB = 5.0 V f = 1.0 MHz, VEB = 5.0 V Part Symbol CCE CCB CEB RTHJamb ICEO ICEO ICEO ICEO Min Typ. 6.8 8.5 11 500 2.0 2.0 5.0 5.0 50 50 100 100 Max Unit pF pF pF K/W nA nA nA nA Coupler Parameter Saturation voltage, collectoremitter Capacitance (input-output) Test condition IF = 10 mA, IC = 2.5 mA VI-O = 0 , f = 1.0 MHz Symbol VCEsat CIO Min Typ. 0.25 0.6 Max 0.4 Unit V pF Current Transfer Ratio Current Transfer Ratio and Collector-Emitter Leakage Current by Dash Number Parameter IC/IF at VCE = 5.0 V Test condition IF = 10 mA Part SFH601-1 SFH601-2 SFH601-3 SFH601-4 IF = 1.0 mA SFH601-1 SFH601-2 SFH601-3 SFH601-4 Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min 40 63 100 160 13 22 34 56 30 45 70 90 Typ. Max 80 125 200 320 Unit % % % % % % % % Document Number 83663 Rev. 1.4, 26-Oct-04 www.vishay.com 3 SFH601 Vishay Semiconductors Switching Non-saturated Parameter Test condition Symbol Unit IF mA 10 2.0 tr s 2.0 Current Rise time Fall time VCC = 5.0 V, RL = 75 tf ton s 3.0 Turn-on time VISHAY Turn-off time toff s 2.3 Switching Saturated Parameter Test condition Symbol Unit SFH601-1 SFH601-2 SFH601-3 SFH601-4 IF mA 20 10 10 0.5 tr s 2.0 3.0 3.0 4.6 Current Rise time Fall time VCEsat = 0.25 ( 0.4) V tf s 11 14 14 15 ton s 3.0 4.2 4.2 6.0 toff s 18 23 23 25 Tutn-on time Turn-off time Typical Characteristics (Tamb = 25 C unless otherwise specified) (TA = -25C, VCE = 5.0 V) IC/IF = f (IF) IF RL = 75 IC VCC = 5 V 47 iSFH601_01 isfh600_03 Figure 1. Linear Operation ( without Saturation) Figure 3. Current Transfer Ratio vs. Diode Current DC Pulsbetrieb Pulse IF 1 K VCC = 5 V (TA = 0C, VCE = 5.0 V) IC/IF = f (IF) 47 iSFH601_02 iSFH601_04 Figure 2. Switching Operation (with Saturation) Figure 4. Current Transfer Ratio vs. Diode Current www.vishay.com 4 Document Number 83663 Rev. 1.4, 26-Oct-04 VISHAY SFH601 Vishay Semiconductors DC Pulsbetrieb Pulse DC Pulsbetrieb Pulse (VCE = 5.0 V) IC/IF = f (IF) (IF = 10 mA, VCE = 5.0 V) IC/IF = f (T) iSFH601_05 iSFH601_08 Figure 5. Current Transfer Ratio vs. Diode Current Figure 8. Current Transfer Ratio vs. Diode Current DC Pulsbetrieb Pulse (TA = 50C, VCE = 5.0 V) IC/IF = f (IF) DC Pulsbetrieb Pulse IC = f (VCE) (IF = 0) iSFH601_06 iSFH601_09 Figure 6. Current Transfer Ratio vs. Diode Current Figure 9. Transistor Characteristics DC Pulsbetrieb Pulse (TA = 75C, VCE = 5.0 V) IC/IF = f (IF) DC Pulsbetrieb Pulse IC=f(VCE) iSFH601_07 iSFH601_10 Figure 7. Current Transfer Ratio vs. Diode Current Figure 10. Output Characteristics Document Number 83663 Rev. 1.4, 26-Oct-04 www.vishay.com 5 SFH601 Vishay Semiconductors VISHAY VF = f (IF) VCEsat = f (IC) iSFH601_11 iSFH601_14 Figure 11. Forward Voltage Figure 14. Saturation Voltage vs. Collector Current and Modulation Depth SFH601-2 ICEO = f (V,T) (IF = 0) VCEsat = f (IC) iSFH601_12 iSFH601_15 Figure 12. Collector-Emitter Off-state Current Figure 15. Saturation Voltage vs. Collector Current and Modulation Depth SFH601-3 VCEsat VCEsat = f (IC) VCEsat = f (IC) mA iSFH601_13 iSFH601_16 Figure 13. Saturation Voltage vs. Collector Current and Modulation Depth SFH601-1 Figure 16. Saturation Voltage vs. Collector Current and Modulation Depth SFH601-4 www.vishay.com 6 Document Number 83663 Rev. 1.4, 26-Oct-04 VISHAY SFH601 Vishay Semiconductors D = parameter, IF = f (tp) iSFH601_17 Figure 17. Permissible Pulse Load Ptot = f (TA) iSFH601_18 Figure 18. Permissible Power Dissipation for Transistor and Diode Ptot = f (TA) iSFH601_19 Figure 19. Permissible Forward Current Diode Document Number 83663 Rev. 1.4, 26-Oct-04 www.vishay.com 7 SFH601 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID VISHAY 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN. Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18450 www.vishay.com 8 Document Number 83663 Rev. 1.4, 26-Oct-04 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. SFH601 Vishay Semiconductors 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83663 Rev. 1.4, 26-Oct-04 www.vishay.com 9 |
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