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| STD60N55-1 STD60N55 N-channel 55V - 8.0m - 65A - DPAK - IPAK MDmeshTM low voltage Power MOSFET PRELIMINARY DATA General features Type STD60N55 STD60N55-1 VDSS 55V 55V RDS(on) <10.5m <10.5m ID 65A 65A Pw 110W 110W 3 1 Standard threshold drive 100% avalanche tested DPAK 3 2 1 IPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique "Single Feature SizeTM" strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications Switching application Order codes Part number STD60N55 STD60N55-1 Marking D60N55 D60N55-1 Package DPAK IPAK Packaging Tape & reel Tube July 2006 Rev 1 1/12 www.st.com 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STD60N55 - STD60N55-1 Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/12 STD60N55 - STD60N55-1 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDM (1) PTOT Absolute maximum ratings Parameter Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 55 20 65 46 260 110 0.73 8 390 -55 to 175 Unit V V A A A W W/C V/ns mJ C dv/dt (2) EAS (3) Tj Tstg Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD <65A, di/dt <300A/s, VDD< V(BR)DSS. Tj < Tjmax 3. Starting Tj=25C, Id=32A, Vdd=40V Table 2. Symbol Rthj-case Thermal resistance Parameter Thermal resistance junction-case max Value 1.36 50 275 Unit C/W C/W C Rthj-pcb (1) Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose 1. When mounted on FR-4 board of 1inch, 2oz Cu 3/12 Electrical characteristics STD60N55 - STD60N55-1 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Static Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating,Tc = 125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 32A 2 8.0 Min. Typ. Max. Unit 55 10 100 200 V A A nA V m 4 10.5 Table 4. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =25V, ID=32A Min Typ. Max. Unit 50 2200 500 25 33.5 12.5 9.5 45 S pF pF pF nC nC nC VDS = 25V, f = 1MHz, VGS=0 VDD = 27V, ID = 65A VGS =10V (see Figure 2) 1. Pulsed: pulse duration = 300s, duty cycle 1.5% 4/12 STD60N55 - STD60N55-1 Electrical characteristics Table 5. Symbol td(on) tr td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Rise time Test conditions VDD = 27V, ID = 32A, RG = 4.7, VGS = 10V (see Figure 3) VDD = 27V, ID = 32A, RG = 4.7, VGS = 10V (see Figure 3) Min. Typ. 20 50 Max. Unit ns ns Turn-off delay time Fall time 35 11.5 ns ns Table 6. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 65A, VGS = 0 ISD = 65A, VDD = 30V di/dt = 100A/s, Tj = 150C(see Figure 5) 47 87 3.7 Test conditions Min. Typ. Max. 65 260 1.5 Unit A A V ns nC A VSD trr Qrr IRRM 1. Pulsed: pulse duration = 300s, duty cycle 1.5% 5/12 Test circuit STD60N55 - STD60N55-1 3 Figure 1. Test circuit Unclamped inductive load test circuit Figure 2. Unclamped inductive wafeform Figure 3. Switching times test circuit for resistive load Figure 4. Gate charge test circuit Figure 5. Test circuit for inductive load Figure 6. switching and diode recovery times Switching time waveform 6/12 STD60N55 - STD60N55-1 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/12 Package mechanical data STD60N55 - STD60N55-1 DPAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0 8 0 1 0.023 0.008 8 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch 0068772-F 8/12 STD60N55 - STD60N55-1 Package mechanical data TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 9/12 Packaging mechanical data STD60N55 - STD60N55-1 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 10/12 STD60N55 - STD60N55-1 Revision history 6 Revision history Table 7. Date 17-Jul-2005 Revision history Revision 1 First release Changes 11/12 STD60N55 - STD60N55-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 |
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