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2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3497
High Power Amplifier Application
Unit: mm High breakdown voltage Complementary to 2SJ618 : VDSS = 180V
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note ) Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 180 12 10 30 130 150 -55~150 Unit V V A A W C C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
Pulse (Note )
Drain power dissipation (Tc = 25C) Channel temperature Storage temperature range
Note :
Please use devices on condition that the channel temperature is below 150C.
JEDEC JEITA TOSHIBA
2-16C1B
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.96 50 Unit C / W C / W
Weight: 4.6 g (typ.)
2
1
3
1
2003-07-16
2SK3497
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Symbol IGSS IDSS V (BR) DSS Vth VDS (ON) |Yfs| Ciss Crss Coss VDS = 30 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 12 V, VDS = 0 V VDS = 180V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 7 V, ID = 5 A VDS = 10 V, ID = 5 A Min -- -- 180 1.1 -- 6.0 -- -- -- Typ. -- -- -- -- -- 12.0 2400 220 30 Max 10 100 -- 2.1 0.75 -- -- -- -- pF Unit A A V V V S
This transistor is an electrostatic sensitive device. Please handle with caution.
Marking
TOSHIBA K3497
TYPE
Lot Number Month (Starting from Alphabet A) Year (Last Number of the Christian Era)
2
2003-07-16
2SK3497
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
3
2003-07-16

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