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| 2SK3581-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Symbol Ratings Unit V VDS 500 A ID 16 A ID(puls] 64 V VGS 30 A IAR *2 16 mJ EAS *1 212.2 kV/s dVDS/dt *4 20 dV/dt *3 5 kV/s PD Ta=25C 1.67 W Tc=25C 225 +150 Operating and storage Tch C -55 to +150 temperature range Tstg C *1 L=1.52mH, Vcc=50V,Tch=25C, See to Avalanche Energy Graph *2 Tch < 150C = *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS < 500V = = = = Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=30V VDS=0V ID=7A VGS=10V ID=7A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=7A VGS=10V RGS=10 VCC=250V ID=14A VGS=10V L=2.27mH Tch=25C IF=14A VGS=0V Tch=25C IF=14A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C Min. 500 3.0 Typ. Max. 5.0 25 250 100 0.46 Units V V A nA S pF 7 10 0.35 14 1600 2400 160 240 7 10.5 18 27 16 24 35 50 8 15 33 50 12.5 19 10.5 16 1.00 0.65 6.0 ns nC 16 1.50 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.556 75.0 Units C/W C/W 1 2SK3581-01L,S,SJ Characteristics FUJI POWER MOSFET 250 Allowable Power Dissipation PD=f(Tc) 500 450 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=50V IAS=7A 200 400 350 150 300 IAS=10A EAS [mJ] 0 25 50 75 100 125 150 PD [W] 250 200 150 IAS=16A 100 50 100 50 0 0 0 25 50 75 100 125 150 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 30 28 26 24 22 20 20V 10V 8V 7.5V 10 Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID [A] 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 VGS=6.5V 7.0V ID[A] 1 0.1 0 18 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 1.0 0.9 VGS=6.5V 0.8 0.7 7.0V 7.5V RDS(on) [ ] 10 0.6 0.5 0.4 0.3 0.2 0.1 8V 10V 20V gfs [S] 1 0.1 0.1 1 10 0.0 0 5 10 15 20 25 30 ID [A] ID [A] 2 2SK3581-01L,S,SJ FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=7A,VGS=10V 1.2 1.1 1.0 0.9 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA max. VGS(th) [V] 0.8 RDS(on) [ ] 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 min. 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -50 -25 0 25 50 75 100 125 150 typ. max. -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics 24 22 20 18 250V 16 14 400V Vcc= 100V 1n VGS=f(Qg):ID=14A, Tch=25C 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss VGS [V] 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 C [F] 100p Coss 10p Crss 1p 10 -1 10 0 10 1 10 2 10 3 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode 100 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=10 IF=f(VSD):80s Pulse test,Tch=25C 10 10 2 tr td(off) IF [A] t [ns] td(on) 10 1 tf 1 10 0.1 0.00 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 0 10 1 VSD [V] ID [A] 3 2SK3581-01L,S,SJ Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25C,Vcc=50V FUJI POWER MOSFET 10 2 Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Outline Drawings (mm) Type(L) Type(S) Type(SJ) 4 1 23 1 42 3 1 23 1 2 3 http://www.fujielectric.co.jp/denshi/scd/ 4 |
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