 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| EMX26 Transistors General purpose transistors (dual transistors) EMX26 Features 1) Two 2SD2654 chips in a EMT package. 2) Mounting possible with EMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. External dimensions (Unit : mm) EMX26 0.22 (4) (5) (6) (3) (2) 1.2 1.6 (1) 0.13 Each lead has same dimensions ROHM : EMT6 Structure Epitaxial planar type NPN silicon transistor Abbreviated symbol : X26 The following characteristics apply to both Tr1 and Tr2. Equivalent circuit EMX26 (3) (2) (1) Tr1 Tr2 (4) (5) (6) Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 60 50 12 0.15 0.2 Unit V V V A (DC) A (Pulse) 1 mW C C 2 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature 150 (TOTAL) 150 -55 to +150 1 Single pulse Pw=100ms. 2 120mW per element must not be exceeded. 0.5 0.5 0.5 1.0 1.6 1/3 EMX26 Transistors Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 60 50 12 - - - 820 - - Typ. - - - - - - - 250 3.5 Max. - - - 0.3 0.3 0.3 2700 - - Unit V V V A A V - MHz pF IC=10A IC=1mA IE=10A VCB=50V VEB=12V Conditions IC/IB=50mA/5mA VCE/IC=5V/1mA VCE=5V, IE=-10mA, f=100MHz VCB=5V, IE=0A, f=1MHz Packaging specifications Package Code Type Taping T2R 8000 Basic ordering unit (pieces) EMX26 Electrical characteristic curves 2.0 COLLECTOR CURRENT : IC (mA) Ta=25C COLLECTOR CURRENT : IC (mA) 1.2A 200 500A 160 450A 400A 350A 300A 200 1.6 COLLECTOR CURRENT : IC (mA) A 250 A 200 150A 100A VCE=5V 100 50 0C Ta=10 1.2 0.8A 0.6A 120 10 5 2 1 0.5 0.2 0 0.2 0.8 0.4A 80 50A 0.4 0.2A IB=0 40 Ta=25C Measured using pulse current 4 8 IB=0 0 0 0.1 0.2 0.3 0.4 0.5 0 0 12 16 20 25C -25C 2.0A 1.8A 1.6A 1.4A 1.0A 20 0.4 0.6 0.8 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output characteristics ( ) Fig.2 Grounded emitter output characteristics ( ) Fig.3 Grounded emitter propagation characteristics 5000 DC CURRENT GAIN : hFE Ta=25C Measured using pulse current VCE=10V 5000 DC CURRENT GAIN : hFE Ta=100C 25C VCE=5V Measured using pulse current COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 10000 10000 1000 500 200 100 50 20 10 5 2 1 0.2 0.5 1 2 5 10 20 IC / IB=50 20 10 Ta=25C 2000 1000 500 5V 2000 1000 500 200 100 50 20 -25C 200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200 3V 10 0.2 0.5 1 2 5 10 20 50 100 200 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) 2/3 EMX26 Transistors COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) 1000 500 200 100 50 20 10 5 2 1 0.2 0.5 1 2 5 10 20 -25C Ta=100C 25C IC / IB=10 10000 5000 2000 1000 500 50 IC/IB=10 20 Ta=25C 10000 5000 2000 1000 500 100C Ta= -25C 25C IC/IB=10 200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200 200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Base-emitter saturation voltage vs. collector current ( ) Fig.9 Base-emitter saturation voltage vs. collector current ( ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 500 TRANSITION FREQUENCY : fT (MHz) 1000 500 200 100 100 Ta=25C f=1MHz IE=0A 50 20 10 Ta=25C f=1kHz Vi=100mV(rms) RL=1k 200 100 50 20 10 5 Ta=25C VCE=5V 2 Measured 1 using pulse current -1 -2 -5 -10 -20 Ron : () 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 -50 -100-200 -500 -1000 EMITTER CURRENT : IE (mA) COLLRCTOR TO BASE VOLTAGE : VCB (V) IB (mA) Fig.10 Gain bandwidth product vs. emitter current Fig.11 Collector output capacitance vs. collector-base voltage Fig.12 Output on resistance vs. base current 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
Price & Availability of EMX26
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |