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MJD44E3
Preferred Device
Darlington Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers.
Features
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* * * * * * *
Electrically Similar to Popular D44E3 Device High DC Gain - 1000 Min @ 5.0 Adc Low Sat. Voltage - 1.5 V @ 5.0 Adc Compatible With Existing Automatic Pick and Place Equipment Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Package is Available
NPN DARLINGTON SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS, 20 WATTS
4 12 3
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VEB IC PD 20 0.16 PD 1.75 0.014 TJ, Tstg -55 to +150 Max 80 7 10 Unit Vdc Vdc Adc W W/C W W/C C YWW J 44E3G DPAK CASE 369C STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) Lead Temperature for Soldering Symbol RqJC RqJA TL Max 6.25 71.4 260 Unit C/W C/W
Y WW J44E3 G
= Year = Work Week = Device Code = Pb-Free Package
ORDERING INFORMATION
C Device MJD44E3T4 MJD44E3T4G Package DPAK DPAK (Pb-Free) Shipping 2500/Tape & Reel 2500/Tape & Reel
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2005
1
December, 2005 - Rev. 4
Publication Order Number: MJD44E3/D
II I I II IIIII IIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I III II I IIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIII I III II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I III I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I III III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
SWITCHING TIMES DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Fall Time (IC = 10 Adc, IB1 = IB2 = 20 mAdc)
Storage Time (IC = 10 Adc, IB1 = IB2 = 20 mAdc)
Delay and Rise Times (IC = 10 Adc, IB1 = 20 mAdc)
Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz)
DC Current Gain (VCE = 5 Vdc, IC = 5 Adc)
Base-Emitter Saturation Voltage (IC = 5 Adc, IB = 10 mAdc)
Collector-Emitter Saturation Voltage (IC = 5 Adc, IB = 10 mAdc) (IC = 10 Adc, IB = 20 mAdc)
Emitter Cutoff Current (VEB = 7 Vdc)
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)
0.1
0.2
IC, COLLECTOR CURRENT (AMPS)
10
5
Characteristic
100 ms
PD, POWER DISSIPATION (WATTS)
0.3
0.5
1
2
3
1
2 3 5 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Maximum Forward Bias Safe Operating Area
BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
TC = 25C SINGLE PULSE
5 ms
1 ms
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MJD44E3
100
2 0.5 1.5 15 TA TC 2.5 25 0 1 10 2 20 0 5 25 Symbol VCE(sat) VBE(sat) td + tr IEBO ICES hFE Ccb ts tf TC 50
Figure 2. Power Derating
TA T, TEMPERATURE (C) 1000 Min - - - - - - - - - 75 2 - - - - - - - Typ 0.5 0.6IIII ms - 100 Max 130 2.5 1.5 2 10 - - - 1 125 Unit Vdc Vdc mA mA pF ms ms - 150
MJD44E3
PACKAGE DIMENSIONS
DPAK CASE 369C-01 ISSUE O
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 ---
-T- B V R
4
SEATING PLANE
C E
A S
1 2 3
Z U
K F L D 2 PL G 0.13 (0.005)
M
J H T
DIM A B C D E F G H J K L R S U V Z
STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
SOLDERING FOOTPRINT*
6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118
SCALE 3:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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3
MJD44E3/D

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