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LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors NPN Silicon 3 COLLECTOR MMBTA13LT1 MMBTA14LT1 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CES V CBO V EBO IC Value 30 30 10 300 Unit Vdc Vdc Vdc mAdc 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R JA PD 556 300 2.4 R JA T J , T stg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING MMBTA13LT1 = 1M; MMBTA14LT1 = 1N ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 100 Adc, V BE = 0) Collector Cutoff Current ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current ( V EB = 10Vdc, I C = 0) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. I EBO -- 100 nAdc V (BR)CEO 30 -- -- 100 Vdc nAdc I CBO M26-1/5 LESHAN RADIO COMPANY, LTD. MMBTA13LT1 MMBTA14LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE MMBTA13 MMBTA14 MMBTA13 MMBTA14 VCE(sat) V BE 5,000 10,000 10,000 20,000 -- -- -- -- -- -- 1.5 2.0 Vdc Vdc Min Max Unit -- ON CHARACTERISTICS (3) DC Current Gain (I C = 10 mAdc, V CE = 5.0 Vdc) (I C = 100mAdc, V CE = 5.0Vdc) Collector-Emitter Saturation Voltage (I C = 100 mAdc, I B = 0.1 mAdc) Base-Emitter On Voltage (I C = 100mAdc, V CE = 5.0Vdc) SMALL-SIGNAL CHARACTERISTICS Current - Gain-Bandwidth Product(4) (V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz) 3. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%. 4. f T = |h f e | *f test . fT 125 -- MHz RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model M26-2/5 LESHAN RADIO COMPANY, LTD. MMBTA13LT1 MMBTA14LT1 NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25C) 500 BANDWIDTH = 1.0 Hz R ~0 ~ 2.0 BANDWIDTH = 1.0 Hz e n , NOISE VOLTAGE (nV) I n , NOISE CURRENT (pA) 200 S 1.0 0.7 0.5 0.3 0.2 100 50 10 A 100A IC=1.0mA 20 0.1 0.07 0.05 0.03 100A 10A IC=1.0mA 10 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k 0.02 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 2. Noise Voltage V T, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 3. Noise Current 200 500 BANDWIDTH = 10 Hz TO 15.7 kHz NF, NOISE FIGURE (dB) 100 70 50 BANDWIDTH = 10 Hz TO 15.7 kHz I C = 10 A 200 100 50 10 A 100 A 30 20 100 A 20 10 I C = 1.0 mA 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 5.0 1.0 2.0 5.0 10 20 50 100 200 500 1.0k R S , SOURCE RESISTANCE (k) R S , SOURCE RESISTANCE (k) Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure M26-3/5 LESHAN RADIO COMPANY, LTD. MMBTA13LT1 SMALL-SIGNAL CHARACTERISTICS |h fe |, SMALL- SIGNAL CURRENT GAIN 20 4.0 MMBTA14LT1 C, CAPACITANCE (pF) T J =25C 10 7.0 5.0 V CE = 5.0 V f = 100 MHz 2.0 T J = 25C C ibo C obo 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.1 0.2 0.4 1.0 1.2 4.0 10 20 40 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 V R, REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 6. Capacitance V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS) Figure 7. High Frequency Current Gain 200k 3.0 T J= 125C 100k T J= 25C 2.5 h FE , DC CURRENT GAIN 70k 50k 30k 20k 10k 7.0k 5.0k 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 500 25C I C = 10mA 2.0 50 mA 250mA 500mA 1.5 -55C V CE= 5.0V 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 I C , COLLECTOR CURRENT (mA) I B , BASE CURRENT (A) Figure 8. DC Current Gain R V , TEMPERATURE COEFFICIENTS (mV/C) -1.0 Figure 9. Collector Saturation Region 1.6 T J = 25C 1.4 *APPLIES FOR I C /I B +25C TO +125C * R VC for V CE(sat) -55C TO +25C V, VOLTAGE ( VOLTS ) V BE(sat) @ I C /I B = 1000 1.2 -3.0 V BE(on) @ V CE = 5.0 V 1.0 +25C TO +125C -4.0 VB for V BE -5.0 0.8 V CE(sat) @ I C /I B = 1000 -55C TO +25C 0.6 5.0 7.0 10 20 30 50 70 100 200 300 500 -6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients M26-4/5 LESHAN RADIO COMPANY, LTD. MMBTA13LT1 r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED) 1.0 0.7 0.5 0.3 0.2 MMBTA14LT1 D = 0.5 0.2 SINGLE PULSE 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.05 SINGLE PULSE Z JC(t) = r(t) * R JC T J(pk) - T C = P (pk) Z JC(t) Z JA(t) = r(t) * R JA T J(pk) - T A = P (pk) Z JA(t) 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k t, TIME (ms) Figure 12. Thermal Response 1.0k I C , COLLECTOR CURRENT (mA) 700 500 300 200 1.0 ms FIGURE A T A = 25C T C = 25C 100s t PP P 1.0 s PP 100 70 50 30 20 t CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 1 1/f DUTY CYCLE =t 1 f = t1 tP 10 PEAK PULSE POWER = P P V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13.Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data M26-5/5 |
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