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| LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMVL105GT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical tuning methods. * Controlled and Uniform Tuning Ratio * Device Marking: M4E 30 VOLT VOLTAGEVARIABLE CAPACITANCE DIODES 1 2 ORDERING INFORMATION Device MMVL105GT1 Package SOD-323 Shipping 3000 / Tape & Reel PLASTIC, CASE 477 SOD- 323 1 CATHODE MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C RJA TJ, Tstg *FR-4 Minimum Pad Characteristic Reverse BreakdownVoltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 28 Vdc) Ct VR = 25 Vdc, f = 1.0 MHz pF Device Type MMVL105T1 Min 1.5 Max 2.8 Q VR = 3.0 Vdc f = 50 MHz Typ 250 Min 4.0 CR, C3/C25 f = 1.0 MHz Max 6.5 IR -- 50 nAdc Themal Resistance Junction toAmbient Junction and Storage Temperature 1.57 635 150 mW/C C/W C Value 30 200 Max 200 Unit Vdc mAdc Unit mW 2 ANODE THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol V(BR)R Min 30 Max -- Unit Vdc MMVL105GT1-1/2 LESHAN RADIO COMPANY, LTD. MMVL105GT1 TYPICAL CHARACTERISTICS 20 18 CT , DIODE CAPACITANCE (pF) Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 4.0 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 f = 1.0 MHz TA = 25C 1000 VR = 3 Vdc TA = 25C 100 10 10 100 f, FREQUENCY (MHz) 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT , DIODE CAPACITANCE (NORMALIZED) 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz TA, AMBIENT TEMPERATURE (C) Figure 3. Diode Capacitance MMVL105GT1-2/2 |
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