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 Product Description
Stanford Microdevices' SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 1800-2500 MHz cellular, ISM, WLL and Wideband CDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Typical IP3, P1dB, Gain
45 40 35 30 25 20 15 10 5 0 1960 MHz 2140 MHz
IP3 P1dB Gain
SXT-289
1800-2500 MHz Power Amplifier
Product Features * Patented High Reliability GaAs HBT Technology * High Output 3rd Order Intercept : +42 dBm typ. *
at 2450 MHz Surface-Mountable Power Plastic Package
Applications * PCS Systems * WLL, Wideband CDMA Systems * ISM Systems
2450 MHz
Symbol
Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25C Output Power at 1dB Compression f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz V s = 8V Rbias = 27 ohms Vdevice = 5 V typ.
Units dB m dB m dB m dB dB dB dB m dB m dB m dB dB dB mA C/W
Min.
Typ. 23.5 23.5 23.0
Max.
P 1dB
S 21
Small signal gain
13.5
15.0 15.0 13.8 1.4:1 1.6:1 1.6:1
16.6
S11
Input VSWR
IP3
Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
37.5
41.0 40.0 42.0 4.4 4.5 5.4
NF
Noise Figure
Id Rth, j-l
Device Current Thermal Resistance (junction - lead)
85
105 108
120
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101157 Rev D
1
SXT-289 1800-2500 MHz Power Amplifier
1960 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3 P1dB vs Frequency
26 25
dBm
Gain vs. Frequency
25C -40C 85C
dB
20 18 16 14 12 10 1930
25C -40C 85C
24 23 22 21 1930
1940
1950
1960
MHz
1970
1980
1990
1940
1950
1960
MHz
1970
1980
1990
Input/Output Return Loss, Isolation vs Frequency
0 -5 -10 -15 -20 -25 -30 -35 -40 1930
42
S11
dBm
Third Order Intercept vs. Frequency (POUT per tone = 11dBm)
41 40 39 38 37 1930
25C -40C 85C
dB
S22
S12
1940
1950
1960
MHz
1970
1980
1990
1940
1950
1960
MHz
1970
1980
1990
Third Order Intercept vs Tone Power
Device Current vs. Source Voltage
180 160 140 120 100 80 60 40 20 0 0 .0
25C -40C 85C
42
Device Current (mA)
41
dBm
40 39 38 37 0 2 4 6 8 10 12 14 16
POUT per tone (dBm)
25C -40C 85C
2 .0
4 .0
VS (V)
6.0
8 .0
10 .0
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101157 Rev D
2
SXT-289 1800-2500 MHz Power Amplifier
2140 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3 P1dB vs Frequency Gain vs. Frequency
26 25
dBm
20 18 16
dB
25C -40C 85C
24 23 22 21 2110
25C -40C 85C
14 12 10 2110
2120
2130
2140
MHz
2150
2160
2170
2120
2130
2140
MHz
2150
2160
2170
Input/Output Return Loss, Isolation vs Frequency
5 0 -5 -10 -15 -20 -25 -30 -35 2110
45 43
dBm
Third Order Intercept vs. Frequency (POUT per tone = 11dBm)
25C -40C 85C
dB
S11 S22 S12
41 39 37 35 2110
2120
2130
2140
MHz
2150
2160
2170
2120
2130
2140
MHz
2150
2160
2170
Third Order Intercept vs Tone Power
Device Current vs. Source Voltage
180 160 140 120 100 80 60 40 20 0 0 .0
25C -40C 85C
45 43
dBm
41 39 37 35 0 2 4 6 8 10 12 14 16
POUT per tone (dBm)
Device Current (mA)
25C -40C 85C
2 .0
4 .0
VS (V)
6 .0
8 .0
1 0 .0
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101157 Rev D
3
SXT-289 1800-2500 MHz Power Amplifier
2450 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3 P1dB vs Frequency Gain vs. Frequency
26 25 24
dBm
20 18 16
dB
25C -40C 85C
23 22 21 20 2400
25C -40C 85C
14 12 10 2400
2420
2440
MHz
2460
2480
2500
2420
2440
2460
MHz
2480
2500
Input/Output Return Loss, Isolation vs Frequency
5 0 -5 -10 -15 -20 -25 S12 -30 -35 2400 2420
dB
46 44
S22
dBm
Third Order Intercept vs. Frequency (POUT per tone = 11dBm)
S11
42 40 38
25C -40C 85C
2440
MHz
2460
2480
2500
36 2400
2420
2440
MHz
2460
2480
2500
Third Order Intercept vs Tone Power
Device Current vs. Source Voltage
180 160 140 120 100 80 60 40 20 0 0 .0
25C -40C 85C
46 44
dBm
42 40 38 36 0 2 4 6 8 10 12 14 16
POUT per tone (dBm)
25C -40C 85C
Device Current (mA)
2 .0
4 .0
VS (V)
6 .0
8 .0
1 0 .0
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101157 Rev D
4
1960 MHz Application Circuit
Note: Circuit tuned for Output IP3
SXT-289 1800-2500 MHz Power Amplifier
Voltage Feed Resistor Bias Circuit (for > 7V supply)
Recommended Bias Resistor Values
Vs
Supply Voltage(Vs)
7V 18 0.5W
8V 27 1.0W
10V 47 1.5W
12V 62 2.0W
Rbias 0.1 F (SIZE A) 390
Rbias (Ohms) Power Rating
18pF
Rbias
1000pF 180 15 nH
15 nH
Z=50 , 8.8
390 Ohms 180 Ohms
RFin
0.1uF 1000pF 18pF
RFout
2.7 nH
39pF
39pF
15nH 2.7nH
15nH 1.0pF
39pF
39pF
0.5pF
0.5 pF
SXT-289
Z=50 , 19
SXT-289
1.0 pF
STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A
Z=50 , 13.5
1960 MHz Schematic
1960 MHz Evaluation Board Layout
Active Current Feedback Bias Circuit (for 5V supply)
Frequency
Vs = 5V
1960 MHz 15.3 39.7* 23.8
Small Signal Gain (dB) Output IP3 (dBm)
0.1 F (SIZE A)
22 pF
P1dB (dBm)
220
2 6 1 (Rohm) UMZ1N
1000 pF
4 5 3
4.3
*Note: IP3 performance degraded due to lower (4.5V) device voltage.
0.1 uF
22pF 4.3
15 nH 39pF
Z=50 , 35.5
39pF
220
1.8K 750 39pF 0.5 pF
1000pF 1.8K 15nH
UMZ1N
1
750
39pF 0.5p F 1.0p F
SXT-289
1.0 pF
Z=50 , 13.5
1960 MHz Schematic
STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-101872 Rev A SOT-89
NOTE: Reference Application Note AN-026 for more information on Active Current Feedback Bias Circuit.
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE
1960 MHz Evaluation Board Layout
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101157 Rev D
5
2140 MHz Application Circuit
Note: Circuit tuned for Output IP3
SXT-289 1800-2500 MHz Power Amplifier
Voltage Feed Resistor Bias Circuit (for > 7V supply)
Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (Ohms) 7V 18 0.5W 8V 27 1.0W 10V 47 1.5W 12V 62 2.0W
Vs
Rbias 0.1 F (SIZE A) 390
Power Rating
18pF
Rbias 390 Ohms 180 Ohms
1000pF 180 15 nH
15 nH 39pF
Z=50 , 56.7
RFin
0.1uF 1000pF 18pF
RFout
39pF
15nH
15nH
39pF
39pF
SXT-289
SXT-289
1.0pF
1.0 pF
STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A
2140 MHz Schematic
2140 MHz Evaluation Board Layout
Active Current Feedback Bias Circuit (for 5V supply)
Frequency
Vs = 5V
2140 MHz 15.0 39.2* 23.0
Small Signal Gain (dB) Output IP3 (dBm)
0.1 F (SIZE A)
22 pF
P1dB (dBm)
220
2 6 1 (Rohm) UMZ1N
1000 pF
4 5 3
4.3
*Note: IP3 performance degraded due to lower (4.5V) device voltage.
0.1 uF
22pF 4.3
15 nH 39pF
Z=50 , 49.8
39pF 750
220
1.8K 750 39pF
1000pF 1.8K 15nH
UMZ1N
1
39pF 1.0p F
SXT-289
1.0 pF
2140 MHz Schematic
NOTE: Reference Application Note AN-026 for more information on Active Current Feedback Bias Circuit.
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE
STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-101872 Rev A SOT-89
2140 MHz Evaluation Board Layout
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101157 Rev D
6
2450 MHz Application Circuit
Note: Circuit tuned for Output IP3
SXT-289 1800-2500 MHz Power Amplifier
Voltage Feed Resistor Bias Circuit (for > 7V supply)
Recommended Bias Resistor Values
Vs
Supply Voltage(Vs)
7V 18 0.5W
8V 27 1.0W
10V 47 1.5W
12V 62 2.0W
Rbias 0.1 F (SIZE A) 390
Rbias (Ohms) Power Rating
18pF
RbiaS
1000pF 180 15 nH
15 nH 39pF
Z=50 , 56
390 Ohms 180 Ohms
RFin
0.1uF 1000pF 18pF
RFout
39pF
15nH
15nH
39pF
39pF
SXT-289
1.0pF
SXT-289
1.0 pF
STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A
2450 MHz Schematic
2450 MHz Evaluation Board Layout
Active Current Feedback Bias Circuit (for 5V supply)
Frequency
Vs = 5V
2450 MHz 14.6 39.7* 23.7
Small Signal Gain (dB) Output IP3 (dBm)
0.1 F (SIZE A)
22 pF
P1dB (dBm)
*Note: IP3 performance degraded due to lower (4.5V) device voltage.
220
2 6 1 (Rohm) UMZ1N
1000 pF
4 5 3
4.3
0.1 uF
22pF 4.3
15 nH 39pF
Z=50 , 40.9
39pF 750
220
1000pF
1.8K 750 39pF
1.8K
UMZ1N
15nH
1
39pF 1.0p F
SXT-289
1.0 pF
STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-101872 Rev A SOT-89
2450 MHz Schematic
NOTE: Reference Application Note AN-026 for more information on Active Current Feedback Bias Circuit.
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE
2450 MHz Evaluation Board Layout
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101157 Rev D
7
Absolute Maximum Ratings
Parameter
Device Voltage Device Current Power Dissipation RF Input Power Junction Temperature Operating Temperature Storage Temperature
SXT-289 1800-2500 MHz Power Amplifier
Part Number Ordering Information
Part Number Devices Per Reel Reel Siz e
SXT-289 1000 7"
Absolute Maximum
6V 200mA 1500mW 100mW +150C -40C to +85C -65C to +150C
Pin # 1 2 3 4
Part Symbolization The part will be symbolized with a "XA2" designator on the top surface of the package. Pin Description
Function Base GND & Emitter Collector Base Pin Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Collector Pin Description
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
GND & Emitter Same as Pin 2
Package Dimensions
.161.006 .096.006 .041.006 .008 .059.004 .038.002 .036.002
.048.002 .010.002 TYP(2X)
.016REF .118REF .177.004 .118.003 .059.003 .019 +.003 -.002 .059
.010 .068.004 .034 .016 +.003 -.002
.030.004 .105.002
MARKING AREA
TOP VIEW
DOT DENOTES PIN 1
+3 5 -4 .041REF
.117.002
.024.004 .161 REF
+.002 .015 -.001 TYP(4X)
PCB Pad Layout
Recommended via and mounting hole pattern (For RF Ground and Thermal considerations)
DIMENSIONS ARE IN INCHES [MM]
Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a continuous groundplane on the backside of the board.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101157 Rev D
8


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