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Composite Transistors
XP02501 (XP2501)
Silicon NPN epitaxial planar type
(0.425)
Unit: mm
0.12+0.05 -0.02
For general amplification Features
* Two elements incorporated into one package (Base-coupled transistors) * Reduction of the mounting area and assembly cost by one half
0.200.05 5 4
1.250.10 2.10.1
1
2
3
(0.65) (0.65) 1.30.1 2.00.1 10
Basic Part Number
* 2SD0601A (2SD601A) x 2
0.90.1
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO IC ICP PT Tj Tstg
60 50 7 100 200 150 150 -55 to +150
V V V mA mA mW C C
1: Emitter (Tr1) 2: Base 3: Emitter (Tr2) EIAJ: SC-88A
0 to 0.1
Parameter
Symbol
Rating
Unit
0.9+0.2 -0.1
Absolute Maximum Ratings Ta = 25C
4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package
Marking Symbol: 5W Internal Connection
5 4
Tr1
5
Tr2
1
2
3
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio hFE ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE(Small/
Large)
Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = -2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
Min 60 50 7
Typ
Max
0.1 100 160 0.50 0.99 0.1 150 3.5 0.3 460
VCE(sat) fT Cob
MHz pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2003 SJJ00156BED
0.20.1
Unit V V V A A V
1
XP02501
PT Ta
250
60
IC VCE
Ta = 25C IB = 160 A
IC I B
240 VCE = 10 V Ta = 25C 200
Total power dissipation PT (mW)
Collector current IC (mA)
Collector current IC (mA)
200
50 140 A 40 120 A 100 A 30 80 A 20 60 A 40 A 10 20 A
160
150
120
100
80
50
40
0
0
0
0 2 4 6 8 10
0
40
80
120
160
0
0.2
0.4
0.6
0.8
1.0
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
IB VBE
1.2 VCE = 10 V Ta = 25C 1.0
240
IC VBE
VCE = 10 V
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10
200
Collector current IC (mA)
Base current IB (mA)
10
0.8
160 25C Ta = 75C -25C
0.6
120
1
0.4
80
10-1
25C -25C
Ta = 75C
0.2
40
0
0
0.2
0.4
0.6
0.8
1.0
0
10
-2
0
0.4
0.8
1.2
1.6
2.0
10-1
1
10
102
Base-emitter voltage VBE (V)
Base-emitter voltage VBE (V)
Collector current IC (mA)
hFE IC
600 VCE = 10 V 300
fT I E
240
VCB = 10 V Ta = 25C
NV IC
VCE = 10 V GV = 80 dB 200 Function = FLAT Ta = 25C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
500
240
Noise voltage NV (mV)
400
Ta = 75C 25C
160 Rg = 100 k
180
300
-25C
120
120
200
80
22 k 4.7 k
100
60
40
0 10-1
1
10
102
0 -10-1
-1
-10
-102
0 10
102
103
Collector current IC (mA)
Emitter current IE (mA)
Collector current IC (A)
2
SJJ00156BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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