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| SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2193 (FP12W50VX2) 500V 12A FEATURES Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case :: E-pack Case ITO-3P (Unit : mm) Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter RATINGS Absolute Maximum Ratings Tc = 25 Item Symbol Conditions Storage Temperature Tstg Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain CurrentDC IDP Continuous Drain CurrentPeak) Continuous Source CurrentDC IS Total Power Dissipation PT IAS Single Pulse Avalanche Current Tch = 25 Vdis Terminals to case, AC 1 minute Dielectric Strength TOR Recommended torque : 0.5Nm Mounting Torque Ratings -55150 150 500 30 12 36 12 50 12 2 0.8 Unit V A W A N Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranconductance gfs Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage jc Themal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions 2SK2193( FP12W50VX2 ) Min. 500 Typ. Max. 250 0.1 3.0 2.5 7.6 0.55 3.0 0.7 3.5 1.5 2.5 Unit V A S V / nC pF 130 280 ns ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = 30V, VDS = 0V ID = 6A, VDS = 10V ID = 6A, VGS = 10V ID = 1mA, VDS = 10V IS = 6A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 12A VDS = 10V, VGS = 0V, f = 1MHZ ID = 6A, VGS = 10V, RL = 25 42 1200 90 270 90 190 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2193 25 Tc = -55C Transfer Characteristics 25C 20 Drain Current ID [A] 100C 15 150C 10 5 VDS = 25V pulse test TYP 0 5 10 15 20 0 Gate-Source Voltage VGS [V] 2SK2193 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 1 ID = 6A 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2193 5 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2193 100 Safe Operating Area 10 100s Drain Current ID [A] R DS(ON) limit 1 200s 1ms 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2193 Transient Thermal Impedance 100 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-5 10-3 10-4 10-2 10-1 100 101 102 Time t [s] 2SK2193 Capacitance Ciss 1000 Capacitance Ciss Coss Crss [pF] Coss 100 Crss Tc=25C TYP 10 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2193 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2193 500 Gate Charge Characteristics 20 Drain-Source Voltage VDS [V] 15 VDD = 400V 200V 300 100V 10 VDS 200 VGS 5 100 ID = 12A 0 0 20 40 60 80 0 100 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 |
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