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| AO4918 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4918 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4918 is Pb-free (meets ROHS & Sony 259 specifications). AO4918L is a Green Product ordering option. AO4918 and AO4918L are electrically identical. Features Q1 Q2 VDS (V) = 30V VDS(V) = 30V ID = 9.3A (VGS = 10V) ID=8.3A (VGS = 10V RDS(ON) < 14.5m <18m (VGS = 10V) <27m (VGS = 4.5V) RDS(ON) < 16m SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K D2 Q1 G1 S1 A Q2 G2 S2 SOIC-8 Absolute Maximum Ratings T =25C unless otherwise noted A Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25C A Current ID TA=70C Pulsed Drain Current B Max Q1 30 12 9.3 7.4 40 2 1.28 -55 to 150 Max Q2 30 20 8.3 6.7 40 2 1.28 -55 to 150 Units V V A IDM TA=25C PD TJ, TSTG Symbol VDS TA=25C TA=70C B TA=70C Power Dissipation Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward A Current W C Units V A Maximum Schottky 30 3 2.2 20 2 1.28 -55 to 150 IF IFM PD TJ, TSTG Pulsed Diode Forward Current Power Dissipation A TA=25C TA=70C Junction and Storage Temperature Range W C Alpha & Omega Semiconductor, Ltd. AO4918 Parameter: Thermal Characteristics MOSFET Q1 A t 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Parameter: Thermal Characteristics MOSFET Q2 A t 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A C Steady-State Maximum Junction-to-Lead Thermal Characteristics Schottky A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Symbol RJA RJL Symbol RJA RJL Typ 53 81.9 30.5 Typ 53 81.9 30.5 Max 62.5 110 40 Max 62.5 110 40 Units C/W Units C/W t 10s Steady-State Steady-State RJA RJL 50.4 86 26.6 62.5 110 40 C/W A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev4: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO4918 Q1 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VR=30V VR=30V, TJ=125C VR=30V, TJ=150C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=9.3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=8.8A Forward Transconductance VDS=5V, ID=9.3A 30 Diode+Schottky Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current TJ=125C 0.6 40 11.7 15.4 13.1 37 0.46 0.5 3.5 3740 4488 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 295 186 0.86 30.5 VGS=4.5V, VDS=15V, ID=9.3A 4.5 8.5 6 VGS=10V, VDS=15V, RL=1.6, RGEN=3 IF=9.3A, dI/dt=100A/s IF=9.3A, dI/dt=100A/s 8.2 54.5 10.5 23.5 13.3 9 12 75 15 28 16 1.1 37 14.5 19 16 1.1 Min 30 0.007 0.05 3.2 12 10 20 100 2 mA nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current. (Set by Schottky leakage) Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance (FET + Schottky) Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode + Schottky Reverse Recovery Time Body Diode + Schottky Reverse Recovery Charge 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately Rev4: August 2005. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO4918 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10V 30 ID (A) 4.5V 2.5V 20 VGS=2V 10 ID(A) 30 25 20 15 125C 10 5 25C VDS=5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 0 0.5 1 1.5 2 2.5 VGS (Volts) Figure 2: Transfer Characteristics 14 Normalized On-Resistance 1.8 1.6 1.4 VGS=10V 1.2 1 0.8 0 50 100 150 200 Temperature (C) Figure 4: On resistance vs. Junction Temperature ID=9.3A VGS=4.5V 13 RDS(ON) (m) VGS=4.5V 12 VGS=10V 11 10 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 25 RDS(ON) (m) 20 125C 15 25C 10 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage ID=9.3A IS (A) 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note F) FET+SCHOTTKY 25C 125C Alpha Omega Semiconductor, Ltd. AO4918 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 100 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 10000 VDS=15V ID=9.3A Capacitance (pF) Ciss f=1MHz VGS=0V 1000 Coss FET+SCHOTTKY 100.0 RDS(ON) limited 10.0 ID (A) TJ(Max)=150C, TA=25C 100s 10s Power (W) 40 TJ(Max)=150C TA=25C 30 1ms 10ms 0.1s 20 1.0 1s 10s DC 10 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. AO4918 Q2 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8.3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=7A Forward Transconductance VDS=5V, ID=8.3A Diode+Schottky Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current TJ=125C 1 30 14.9 22 21.6 23 0.45 0.5 3 1040 1250 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 110 0.7 19.2 VGS=10V, VDS=15V, ID=8.3A 9.36 2.6 4.2 5.2 VGS=10V, VDS=15V, RL=1.8, RGEN=3 IF=8.5A, dI/dt=100A/s 2 Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 0.004 1 5 100 A nA V A 1.8 3 18 27 27 m m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 0.85 24 12 nC nC nC nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 7.5 6.5 25 5 21 10 ns ns ns ns ns nC 4.4 17.3 3.3 16.7 6.7 Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev4: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4918 Q2 Electrical Characteristics (TJ=25C unless otherwise noted) 30 25 20 ID (A) 15 10 5 0 0 1 4V 10V 4.5V 3.5V ID(A) 30 25 20 125C 15 10 5 0 2 3 4 5 1 1.5 2 2.5 3 3.5 4 25C VDS=5V VGS=3V VDS (Volts) Fig 1: On-Region Characteristics VGS (Volts) 1040 Figure 2: Transfer Characteristics 26 Normalized On-Resistance VGS=4.5V 22 RDS(ON) (m) 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0 50 ID=8.3A 180 110 0.7 VGS=4.5V VGS=10V 18 VGS=10V 14 10 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 150 200 Temperature (C) Figure 4: On resistance vs. Junction Temperature 60 50 RDS(ON) (m) 40 30 125C 20 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage ID=8.3A 1.0E+01 1.0E+00 1.0E-01 IS (A) 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C Alpha & Omega Semiconductor, Ltd. AO4918 Q2 Electrical Characteristics (TJ=25C unless otherwise noted) 10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=15V ID=8.5A Capacitance (pF) 1250 1000 750 500 250 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1040 Coss Ciss f=1MHz VGS=0V Crss 100.0 RDS(ON) limited TJ(Max)=150C, TA=25C 100s 10s Power (W) 40 180 110 0.7 30 TJ(Max)=150C TA=25C 10.0 ID (A) 1ms 10ms 0.1s 20 1.0 1s 10s DC 10 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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