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| AP9918H/J Advanced Power Electronics Corp. Low on-resistance Capable of 2.5V gate drive Low drive current Surface mount package N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 14m 45A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G DS TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=125 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 20 12 45 20 140 48 0.38 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.6 110 Unit /W /W Data and specifications subject to change without notice 200227032 AP9918H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.1 26 19 1.5 10.5 7.5 83 18 23 500 310 125 Max. Units 14 28 1.2 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=18A VGS=2.5V, ID=9A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125 C) o o VDS=VGS, ID=250uA VDS=10V, ID=18A VDS=20V, VGS=0V VDS=20V ,VGS=0V VGS= 12V ID=18A VDS=20V VGS=5V VDS=10V ID=18A RG=3.3,VGS=5V RD=0.56 VGS=0V VDS=20V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 45 140 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=45A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9918H/J 120 80 T C =25 C o V G =4.5V T C =150 o C V G =4.5V V G =4.0V V G =4.0V ID , Drain Current (A) 80 60 V G =3.5V V G =3.5V ID , Drain Current (A) V G =3.0V 40 V G =3.0V 40 V G =2.5V 20 V G =2.5V 0 0 1 2 3 4 0 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 26 1.8 I D = 18 A 24 I D =18A 1.6 T C =25 C 22 o V G =4.5V 20 Normalized R DS(ON) 1 2 3 4 5 6 1.4 RDS(ON) (m ) 18 1.2 16 1.0 14 0.8 12 10 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP9918H/J 50 60 50 40 ID , Drain Current (A) 40 30 PD (W) 20 10 0 25 50 75 100 125 150 30 20 10 0 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1000 1 DUTY=0.5 Normalized Thermal Response (R thjc) 0.2 100 10us ID (A) 0.1 0.1 0.05 100us 10 0.02 PDM SINGLE PULSE 0.01 t T 1ms T c =25 o C Single Pulse 1 1 10 100 10ms 100ms Duty factor = t/T Peak Tj = P DM x Rthjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP9918H/J 12 10000 f=1.0MHz I D =18A 10 V DS =10V V DS =15V VGS , Gate to Source Voltage (V) 8 V DS =20V C (pF) 1000 Ciss 6 Coss 4 100 Crss 2 0 0 5 10 15 20 25 30 35 10 1 5 9 13 17 21 25 29 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 1.6 1.4 10 1.2 T j =150 o C VGS(th) (V) 1.2 1.6 T j =25 o C IF (A) 1 1 0.8 0.6 0.1 0.4 0.01 0 0.4 0.8 0.2 -50 0 50 100 150 V SD (V) Junction Temperature ( o C ) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP9918H/J RD VDS 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G + 5v - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D G S + RATED VDS QGS QGD VGS I G I D Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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