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| GaAs MMIC GN01100B GaAs IC (with built-in ferroelectric) Unit: mm 0.425 1.250.1 * Super miniature S-Mini 6-pin package (2125 size) * Transmitter amplifier : Wide dynamic range on low operation current : Gain control function built-in R0.2 1 0.65 2 0.65 3 0.425 2.00.1 0.2 6 - 0 to 10 Parameter Power supply voltage Circuit current Gate control voltage Max input power Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDD IDD VAGC PIN PD Topr T stg Ratings 5 80 0 to 3 -5 150 -30 to +90 -40 to +120 Unit V mA V dBm mW C C EIAJ : SC-88 0 to 0.1 1 : RFIN 4 : VDD2 2 : V DD1 5 : GND 3 : VAGC 6 : VREF S Mini Type Package (6-pin) Marking Symbol : HU s Electrical Characteristics VDD1=VDD2=3.0 V, f=906 MHz, Ta=25 C3 C Parameter Circuit current Power gain 1 Power gain 2 *1 *1 *1 Symbol IDD PG1 PG2 DR * 1, 2 Conditions VAGC=2.0 V, PIN=-20 dBm VAGC=2.0 V, PIN=-20 dBm VAGC=0.5 V, PIN=-20 dBm PG1-PG2 Pin=-20 dBm VAGC=2.0 V, POUT=5 dBm IS-95 modulation, 900 kHz Detuning 30 kHz Bandwidth VAGC=2.0 V, Pout=5 dBm IS-95 modulation, 1.98 MHz Detuning 30 kHz Bandwidth min typ 37 0.70.1 0.90.1 s Absolute Maximum Ratings Ta=25 C max 45 -5 Unit mA dB dB dB 20 23 -10 Dynamic range Gain control sensitivity Adjacent channel leakage power (ACP) 1 *1, 3 Adjacent channel leakage power (ACP) 1 *1, 3 30 25 34 49 -54 90 -50 GS ACP1 dB/V dBc ACP2 -74 -65 dBc Note) *1 : Refer to measurement circuit. *2 : {PG(VAGC=1.6V)[dB]-PG(V AGC=1.2V)[dB]/0.4[V] *3 : Design-guaranteed items. 0.20.1 s Features 2.10.1 0.1 For the preamplifier of the transmitting section in a cellular phone Other communication equipment 0.20.05 0.12 +0.05 -0.02 4 6 5 1 GN01100B s Measurement Circuit VREF VDD2 GaAs MMIC 10 nF 33 pF 33 pF 39 nH 5 Out 5 6 1 2 3 4 240 100 pF RFIN 33 pF 4.7 k 10 nF 2 k 10 nH 10 nF 33 nF 10 nF VAGC 2 pF VDD1 2 |
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