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| Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin-offs of our popular SOT-23/SOT-323 three-leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, these devices are ideal for low-power surface mount applications where board space is at a premium. * h FE, 100-300 * Low VCE(sat) , 3 0.4 V * Simplifies Circuit Design * Reduces Board Space See Table * Reduces Component Count * Available in 8 mm, 7-inch/3,000 Unit Tape and Reel MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 6 5 4 1 2 3 SOT-363/SC-88 CASE 419B STYLE 1 6 5 4 6 5 4 6 5 4 Q2 Q1 Q2 Q1 Q2 Q1 1 1 2 3 1 2 3 2 3 MBT3946DW1T1 *Q 1 same as MBT3906DW1T1 Q 2 same as MBT3904DW1T1 MBT3904DW1T1 MAXIMUM RATINGS Rating Collector-Emitter Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Collector-Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Emitter-Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Collector Current -Continuous MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Electrostatic Discharge Symbol V CEO MBT3906DW1T1 Voltage Unit V 40 -40 V CBO 60 -40 V EBO V V 6.0 -5.0 IC 200 -200 HBM>16000, MM>2000 mAdc ESD V THERMAL CHARACTERISTICS Characteristic Total Device Dissipation(1) TA = 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 150 Unit mW ORDERING INFORMATION Device MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 Package SOT-363 SOT-363 SOT-363 Shipping 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel R JA T J , T stg 833 -55 to +150 C/W C 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. MBT3904-1/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (2) V (BR)CEO (I C = 1.0 mAdc, I B = 0) MBT3904DW1T1 (NPN) (I C = -1.0 mAdc, I B = 0) MBT3906DW1T1 (PNP) Collector-Base Breakdown Voltage V (BR)CBO (I C = 10 Adc, I E = 0) MBT3904DW1T1 (NPN) (I C = -10 Adc, I E = 0) MBT3906DW1T1 (PNP) Emitter-Base Breakdown Voltage V (BR)EBO (I E = 10 Adc, I C = 0) MBT3904DW1T1 (NPN) (I E = -10 Adc, I C = 0) MBT3906DW1T1 (PNP) Base Cutoff Current I BL (V CE = 30 Vdc, V EB = 3.0 Vdc) MBT3904DW1T1 (NPN) (V CE = -30 Vdc, V EB = -3.0 Vdc) MBT3906DW1T1 (PNP) Collector Cutoff Current I CEX (V CE = 30 Vdc, V EB = 3.0 Vdc) MBT3904DW1T1 (NPN) (V CE = -30 Vdc, V EB = -3.0 Vdc) MBT3906DW1T1 (PNP) ON CHARACTERISTICS (2) DC Current Gain h FE (I C = 0.1 mAdc, V CE = 1.0 Vdc) MBT3904DW1T1 (NPN) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 50 mAdc, V CE = 1.0 Vdc) (I C = 100 mAdc, V CE = 1.0 Vdc) (I C = -0.1 mAdc, V CE = -1.0 Vdc) MBT3906DW1T1 (PNP) (I C = -1.0 mAdc, V CE = -1.0 Vdc) (I C = -10 mAdc, V CE = -1.0 Vdc) (I C = -50 mAdc, V CE = -1.0 Vdc) (I C = -100 mAdc, V CE = -1.0 Vdc) Collector-Emitter Saturation Voltage V CE(sat) (I C = 10 mAdc, I B = 1.0 mAdc) MBT3904DW1T1 (NPN) (I C = 50 mAdc, I B = 5.0 mAdc) (I C = -10 mAdc, I B = -1.0 mAdc) MBT3906DW1T1 (PNP) (I C = -50 mAdc, I B = -5.0 mAdc) Base-Emitter Saturation Voltage V BE(sat) (I C = 10 mAdc, I B = 1.0 mAdc) MBT3904DW1T1 (NPN) (I C = 50 mAdc, I B = 5.0 mAdc) (I C = -10 mAdc, I B = -1.0 mAdc) MBT3906DW1T1 (PNP) (I C = -50 mAdc, I B = -5.0 mAdc) Min Max Unit Vdc 40 -40 60 -40 6.0 -5.0 -- -- -- -- -- -- Vdc -- -- Vdc -- -- nAdc 50 -50 nAdc 50 -50 Vdc 40 70 100 60 30 60 80 100 60 30 -- -- -- -- 0.65 -- -0.65 -- -- -- -- -- -- -- -- -- -- -- Vdc 0.2 0.3 - 0.25 -0.4 Vdc 0.85 0.95 -0.85 -0.95 MHz 300 250 C obo -- -- C ibo -- -- 8.0 10.0 4.0 4.5 pF -- -- pF SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (I C = 10 mAdc, V CE = 20 Vdc, MBT3904DW1T1 (NPN) f = 100 MHz) (I C = -10 mAdc, V CE = -20 Vdc, MBT3906DW1T1 (PNP) f = 100 MHz) Output Capacitance (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN) (V CB = -5.0 Vdc, I E = 0, MBT3906DW1T1 (PNP) f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN) (V EB = -0.5 Vdc, I C = 0, f = 1.0 MHz) MBT3906DW1T1 (PNP) 2. Pulse Test: Pulse Width < 300 ms; Duty Cycle< 2.0%. fT MBT3904-2/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Input Impedance (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = -10 Vdc, I C = -1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = -10 Vdc, I C = -1.0 mAdc, f = 1.0 kHz) Small-Signal Current Gain (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = -10 Vdc, I C = -1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = -10 Vdc, I C = -1.0 mAdc, f = 1.0 kHz) Noise Figure (V CE = 5.0 Vdc, I C = 100 Adc, R S = 1.0 k W, f = 1.0 kHz) (V CE = -5.0 Vdc, I C = -100 Adc, R S = 1.0 k W, f = 1.0 kHz) Symbol h ie MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) h re MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) h fe MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) h oe MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) NF MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) -- -- 5.0 4.0 1.0 3.0 40 60 dB 100 100 400 400 mhos 0.5 0.1 8.0 10 -- Min 1.0 2.0 Max 10 12 X 10 -4 Unit k SWITCHING CHARACTERISTICS Delay Time (V CC = 3.0 Vdc, V BE = -0.5 Vdc) (V CC = -3.0 Vdc, V BE = 0.5 Vdc) Rise Time (I C = 10 mAdc, I B1 = 1.0 mAdc) (I C = -10 mAdc, I B1 = -1.0 mAdc) Storage Time (V CC = 3.0 Vdc, I C = 10 mAdc) (V CC = -3.0 Vdc, I C = -10 mAdc) Fall Time (I B1 = I B2 = 1.0 mAdc) (I B1 = I B2 = -1.0 mAdc) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) td tr ts tf -- -- -- -- -- -- -- -- 35 35 35 35 200 225 50 70 ns ns ns ns MBT3904-3/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3904DW1T1 (NPN) DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS T J = 25C T J = 125C 10 7.0 5000 3000 2000 CAPACITANCE (pF) 5.0 Q, CHARGE (pC) 0.2 0.3 0.5 0.71.0 2.0 3.0 5.0 7.0 10 20 30 40 1000 700 500 3.0 2.0 300 200 100 1.0 0.1 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Capacitancere Figure 4. Charge Data MBT3904-4/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3904DW1T1 (NPN) 500 300 200 500 300 200 t r , RISE TIME (ns) 100 100 70 50 30 20 10 7 5 TIME(ns) 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn-On Time 500 300 500 300 200 Figure 6. Rise Time t s , STORAGE TIME(ns) 200 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V = 5.0 Vdc, T = 25C, Bandwidth = 1.0 Hz) 12 14 12 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 0.2 0.4 1.0 2.0 4.0 10 20 40 100 10 8 6 4 2 0 0.1 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f,FREQUENCY (kHz) R S , SOURCE RESISTANCE (k) Figure 9. Noise Figure Figure 10. Noise Figure MBT3904-5/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3904DW1T1 (NPN) h PARAMETERS (V CE = 10 Vdc, f = 1.0 kHz, T A = 25C) h oe , OUTPUT ADMITTANCE ( mhos) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 300 100 50 h fe , CURRENT GAIN 200 20 10 5 100 70 50 2 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 30 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. Current Gain h ie , INPUT IMPEDANCE (k OHMS) 20 10 Figure 12. Output Admittance , VOLTAGE FEEDBACK RATIO (x 10-4) re 1.0 7.0 5.0 5.0 3.0 2.0 2.0 1.0 0.5 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) h I C , COLLECTOR CURRENT (mA) Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio MBT3904-6/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3904DW1T1 (NPN) TYPICAL STATIC CHARACTERISTICS h FE , DC CURRENT GAIN (NORMALIZED) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) Figure 15. DC Current Gain h FE , DC CURRENT GAIN (NORMALIZED) 1.0 0.8 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B , BASE CURRENT (mA) Figure 16. Collector Saturation Region V , TEMPERATURE COEFFICIENTS (mV/ C) 1.2 1.0 1.0 0.5 V, VOLTAGE (VOLTS) 0.8 0 0.6 -0.5 0.4 -1.0 0.2 -1.5 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 -2.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients MBT3904-7/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3906DW1T1 (PNP) * Total shunt capacitance of test jig and connectors Figure 19. Delay and Rise Time Equivalent Test Circuit Figure 20. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS T J = 25C T J = 125C 10 7.0 5000 3000 2000 CAPACITANCE (pF) 5.0 Q, CHARGE (pC) 0.2 0.3 0.5 0.71.0 2.0 3.0 5.0 7.0 10 20 30 40 1000 700 500 3.0 2.0 300 200 100 1.0 0.1 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 21. Capacitancere 500 300 200 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 Figure 22. Charge Data 500 300 200 t f , FALL TIME (ns) TIME(ns) 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 23. Turn-On Time Figure 24. Fall Time MBT3904-8/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3906DW1T1 (PNP) TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V = -5.0 Vdc, T = 25C, Bandwidth = 1.0 Hz) 5.0 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 0.2 0.4 1.0 2.0 4.0 10 20 40 100 4.0 10 8 3.0 6 2.0 4 1.0 2 0 0.1 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f,FREQUENCY (kHz) R S , SOURCE RESISTANCE (k) Figure 25. Noise Figure Figure 26. Noise Figure h PARAMETERS (V CE = -10 Vdc, f = 1.0 kHz, T A = 25C) h oe , OUTPUT ADMITTANCE ( mhos) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 300 100 50 h fe , CURRENT GAIN 200 20 10 5 100 70 50 2 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 30 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 27. Current Gain h ie , INPUT IMPEDANCE (k OHMS) 20 10 Figure 28. Output Admittance , VOLTAGE FEEDBACK RATIO (x 10-4) re 1.0 7.0 5.0 5.0 3.0 2.0 2.0 1.0 0.5 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) h I C , COLLECTOR CURRENT (mA) Figure 29. Input Impedance Figure 30. Voltage Feedback Ratio MBT3904-9/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3906DW1T1 (PNP) TYPICAL STATIC CHARACTERISTICS h FE , DC CURRENT GAIN (NORMALIZED) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) Figure 31. DC Current Gain h FE , DC CURRENT GAIN (NORMALIZED) 1.0 0.8 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B , BASE CURRENT (mA) Figure 32. Collector Saturation Region V , TEMPERATURE COEFFICIENTS (mV/ C) 1.0 1.0 0.8 0.5 V, VOLTAGE (VOLTS) 0 0.6 -0.5 0.4 -1.0 0.2 -1.5 0 1.0 2.0 5.0 10 20 50 100 200 -2.0 0 20 40 60 80 100 120 140 160 180 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 33. "ON" Voltages Figure 34. Temperature Coefficients MBT3904-10/12 |
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