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MOSFET MODULE
FEATURES
* Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation
Dual 70A 450V/500V
PD10M441L / PD10M440L
OUTLINE DRAWING
108.0 Dimension(mm)
TYPICAL APPLICATIONS
* Power Supply for the Communications and the Induction Heating
Circuit
MAXMUM RATINGS Ratings
Drain-Source Voltage (VGS=0V) Gate - Source Voltage Continuous Drain Current Duty=50% D.C.
Approximate Weight : 220g
Symbol
VDSS VGSS ID IDM PD Tjw Tstg VISO FTOR
PD10M441L
450 +/ - 20 70 (Tc=25C) 50 (Tc=25C) 140 Tc=25C) 500 Tc=25C) -40 to +150 -40 to +125 2000 3.0 2.0
PD10M440L
500
Unit
V V A A W C C V N*m
Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (@Tc=25C unless otherwise noted) Characteristic Symbol Test Condition
Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time IDSS VGS(th) IGSS rDS(on) gfs Cies Coss Crss td(on) tr td(off) tf VDS=VDSS,VGS=0V Tj=125C, VDS=VDSS,VGS=0V VDS=VGS, ID=1mA VGS=+/- 20V,VDS=0V VGS=10V, ID=40A VDS=15V, ID=40A VDS=25V,VGS=0V,f=1MHz VDD= 1/2VDSS ID=40A VGS= -5V, +10V RG= 7ohm
Min.
2.0 -
Typ.
3.1 75 65 13 2.2 0.45 140 110 300 50
Max.
1.0 4.0 4.0 1.0 85 -
Unit mA V A m-ohm S nF nF nF ns
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Characteristic Symbol Test Condition
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery IS ISM VSD trr Qr D.C. IS=70A IS=70A, -dis/dt=100A/s
Min.
-
Typ.
1100 36
Max.
50 140 2.0 -
Unit A A V ns C Unit C/W
THERMAL CHARACTERISTICS Characteristic Symbol
Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Rth(j-c) Rth(c-f)
Test Condition
MOS FET Diode Mounting surface flat, smooth, and greased
Min.
-
Typ.
-
Max.
0.25 0.25 0.1
PD10M44xL
108.0
PD10M440L/441L, P2H10M440L/441L
Fig.1- Output Characteristics (Typical)
120
Fig.2- Drain to Source On Voltage vs. Gate to Source Voltage (Typical)
TC=25
12
250s PULSE TEST VGE=10V 6V
TC=25 250s PULSE TEST
80
Drain to Source Voltage V DS (V)
100
10
DrainCurrent I D (A)
8
ID=85A
60
6
40
5V
4
ID=40A
2
20
ID=20A
0 0 2 4 6 8
4V
0
10
12
0
2
4
6
8
10
12
14
16
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Fig.3- Drain to Source On Voltage vs. Junction Temperature (Typical)
20
Fig.4- Capacitance vs. Drain to Source Voltage (Typical)
30
VGS=10V 250s PULSE TEST
VGS=0V f=1MHZ TC=25
24
Drain to Source Voltage V DS (V)
16
12
Capacitance C (nF)
ID=85A
18
Ciss
8
ID=40A
12
Coss
6
4
ID=20A
Crss
0 -40 0 40 80 120 160
0 1 3 10 30 100
Junction Temperature Tj ()
Drain to Source Voltage VDS (V)
Fig.5- Gate Charge vs. Gate to Source Voltage (Typical)
16
Fig.6- Series Gate Impedance vs. Switching Time (Typical)
10
ID=50A VDD=100V
14
VDD=250V
Gate to Source Voltage V GS (V)
VDD=250V ID=40A TC=25 80s Pulse Test
10 8 6 4 2 0 0 100 200 300 400 500 600
Switching Time t (s)
12
VDD=400V
3
1
0.3
toff ton
0.1
1
2
5
10
20
50
100
200
Total Gate Charge Qg (nC)
Series Gate Impedance RG ()
PD10M440L/441L,P2H10M440L/441L
Fig.7- Drain Current vs. Switching Time (Typical)
1000
Fig.8- Source to Drain Diode Forward Characteristics (Typical)
120
250s PULSE TEST
td(off)
100
Switching Time t (s)
Source Current I S (A)
300
80
td(on)
100
TJ=125
60
tr
tf
TJ=25
40
30
VDD=250V RG=7 TC=25 80s Pulse Test
2 3 10 30 100 200
20
10
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4
Drain Current ID (A)
Source to Drain Voltage VSD (V)
Fig.9- Reverse Recovery Characteristics (Typical)
2000 500
Fig.10- Maximum Safe Operating Area
Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns)
trr
1000 200 100 500
10s
Drain Current I D (A)
50
100s
200
20 10
Operation in this area is limited by R DS(on) 1ms
100
IRrM
5 2
10ms
50
...IS=40A IS= 70A TJ=150
20 0 100 200 300 400 500 600
1 0.5 1
TC=25 Tj=150MAX Single Pulse
3 10 30 100
DC
441L
440L
300
1000
-dis/dt (A/s)
Drain to Source Voltage V DS (V)
Fig.11- Normalized Transient Thermal Impedance (MOSFET)
Normalized Transient Thermal Impedance [rth (J-C)/Rth (J-C) ]
1x10 1
3
1
3x10 -1
1x10 -1
3x10 -2
1x10 -2 10 -5
Per Unit Base Rth(j-c)= 0.25/W 1 Shot Pulse
10 -4 10 -3 10 -2 10 -1 1 10 1
PULSE DURATION t (s)

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