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| RHRP3060 30A, 600V Hyperfast Diodes April 2005 RHRP3060 30A, 600V Hyperfast Diodes Features * Hyperfast with Soft Recovery ........................ <40ns * Operating Temperature .................................. 175C * Reverse Voltage Up To ..................................600V * Avalanche Energy Rated * Planar Construction Description The RHRP3060 are hypersast diodes with soft recovery characteristics (trr < 40ns). They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA49063. Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Informations Part Number RHRP3060 Package TO-220AC Brand RHRP3060 Note: When opdering, use the entire part number. Packaging Symbol K CATHODE ANODE JEDEC TO-220AC A Absolute Maximum Ratings Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 120C) Repetitive Peak Surge Current (Square Wave, 20KHz) Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation Avalanche Energy (See Figures 10 and 11) Operating and Storage Temperature RHRP3060 600 600 600 30 70 325 125 20 -65 to 175 Units V V V A A A W mJ C (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com RHRP3060 Rev. C RHRP3060 30A, 600V Hyperfast Diodes Electrical Characteristics Symbol VF IR IF = 30A IF = 30A, TC = 150C VR = 400V VR = 600V VR = 400V, TC = 150C VR = 600V, TC = 150C trr ta tb QRR CJ RJC DEFINITIONS TC = 25C unless otherwise noted Test Conditions RHRP3060 Min. - Typ. 22 18 100 85 - Max. 2.1 1.7 250 1.0 40 45 1.2 Units V V A A mA mA ns ns ns ns nC pF C/W IF = 1A, dlF/dt = 200A/s IF = 30A, dlF/dt = 200A/s IF = 30A, dlF/dt = 200A/s IF = 30A, dlF/dt = 200A/s IF = 30A, dlF/dt = 200A/s VR = 600V, IF = 0A VF = Instantaneous forward voltage (pw = 300s, D = 2%) IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = pulse width. D = Duty cycle. RHRP3060 Rev. C 2 www.fairchildsemi.com RHRP3060 30A, 600V Hyperfast Diodes Typical Performance Characteristics Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Currnt vs Reverse Voltage 175C 100C 100C 175C 25C Figure 3. trr, ta and tb Curves vs Forward Current TC = 25C, dlF/dt = 200A/s Figure 4. trr, ta and tb Curves vs Forward Current TC = 100C, dlF/dt = 200A/s trr trr ta tb ta tb Figure 5. trr, ta and tb Curves vs Forward Current Figure 6. Current Derating Curve TC = 175C, dlF/dt = 200A/s trr SQ.WAVE ta tb RHRP3060 Rev. C 3 www.fairchildsemi.com RHRP3060 30A, 600V Hyperfast Diodes Typical Performance Characteristics Figure 7. Junction Capacitance vs Reverse Voltage (Continued) Test Circuit and Waveforms Figure 8. trr Test Circuit VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF Figure 9. trr Waveforms and Definitions L DUT RG VGE t1 t2 CURRENT SENSE + VDD IF 0 dIF dt ta trr tb IGBT - 0.25 IRM IRM Figure 10. Avalanche Energy Test Circuit I = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD Figure 11. Avalanche Current and Voltage Waveforms VAVL IL IV IL - t0 t1 t2 t RHRP3060 Rev. C 4 www.fairchildsemi.com RHRP3060 30A, 600V Hyperfast Diodes TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I15 5 RHRP3060 Rev. C www.fairchildsemi.com |
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