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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 JUNE 94 FEATURES * 60 Volt VDS * RDS(on) = 1 ZVN4206C G D S REFER TO ZVN4206A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-LINE TO92 COMPATIBLE VALUE 60 600 8 20 UNIT V mA A V W C 0.7 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) 300 100 60 20 8 12 12 15 3-387 3 1 1.5 60 1.3 3 100 10 100 MAX. UNIT CONDITIONS. V V nA A A ID=1mA, VGS=0V ID=1mA, VDS= VGS VGS= 20V, VDS=0V VDS=60V, VGS=0 VDS=48V, VGS=0V, T=125C(2) VDS=25V, VGS=10V VGS=10V,ID=1.5A VGS=5V,ID=500mA VDS=25V,ID=1.5A A Forward Transconductance(1)(2gfs ) Input Capacitance (2) Common Source Output Capacitance (2) Ciss Coss mS pF pF pF ns ns ns ns VDS=25V, VGS=0V, f=1MHz Reverse Transfer Capacitance Crss (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) td(on) tr t d(off) tf VDD 25V, ID=1.5A ( |
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