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Bulletin PD-20997 rev. E 12/02
175BGQ030 175BGQ030J
SCHOTTKY RECTIFIER 175 Amp
Major Ratings and Characteristics Characteristics
IF(AV) Rectangular waveform @ TC IDC VRRM IFSM @ tp = 5 s sine VF @175 Apk typical @TJ TJ range Maximum 175BGQ030 175 115 248 30 8000 0.45 150 - 55 to 150
Description/ Features Units
A C A V A V C C The 175BGQ030 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in high current AC/DC power supplies. The proprietary barrier technology allows for reliable operation up to 150C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. 150C TJ operation High Frequency Operation Ultra low forward voltage drop Continuous High Current operation Guard ring for enhanced ruggedness and long term reliability
PowIRtabTM package
Case Styles 175BGQ030 175BGQ030J
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175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) 30 VRWM Max. Working Peak Reverse Voltage (V)
175BGQ030
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current IF(RMS) RMS Forward Current IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current Non-RepetitiveAvalancheEnergy Repetitive Avalanche Current
175BGQ Units
175 248 8000 1500 80 12 A mJ A A A TC = 114C
Conditions
50% duty cycle @ TC = 115C, rectangular wave form 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied
TJ = 25 C, IAS = 12 Amps, L = 1.12 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
VFM Forward Voltage Drop (1) (2)
175BGQ Units
Typ. Max.
Conditions
@ 100A @ 175A @ 100A @ 175A TJ = 25 C TJ = 125C TJ = 125 C TJ = 150 C TJ = TJ max. VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 C Measured from tab to mounting plane TJ = 25 C TJ = 150 C VR = rated VR VR = 15V VR = 30V
0.46 0.48 0.53 0.56 0.35 0.38 0.45 0.49
V V V V mA mA mA mA V m pF nH V/ s
IRM
Reverse Leakage Current (1)
1.3
4.5
450 650 160 220 1400 2000 VF(TO) Threshold Voltage rt CT LS Forward Slope Resistance Max. Junction Capacitance Typical Series Inductance (Rated VR) 0.242 1.4 8500 3.5 10000
dv/dt Max. Voltage Rate of Change
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range
(1) Pulse Width < 300s, Duty Cycle < 2% (2) VFM = VF(TO) + rt x IF
175BGQ Units
-55 to 150 -55 to 150 0.25 0.20 5 (0.18) Min. Max. 1.2 (10) 2.4 (20) C C C/W C/W g (oz.) N*m (Ibf-in) DCoperation
Conditions
RthJC Max. Thermal Resistance Junction to Case RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Case Style
Mounting surface , smooth and greased
PowIRtabTM
2
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175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
1000 10000 1000 100 10 1 0.1 T J = 150C T J = 125C T J = 25C 10000 Junction Capacitance - C T (pF) 0.01 TJ = 150C 125C 100C 75C 50C 25C
Instantaneous Forward Current - I F (A)
100
Reverse Current - I R (mA)
0
5
10
15
20
25
30
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
10
T J = 25C
1
0
0.2
0.4
0.6
0.8
1
1.2
1000
0
5
10
15
20
25
30
35
Forward Voltage Drop - V FM (V)
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1 Thermal Impedance Z thJC (C/W)
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
0.1
D= D= D= D= D=
0.75 0.50 0.33 0.25 0.20 Single Pulse (Thermal Resistance)
PDM
Notes:
t1 t2
1. Duty factor D = t 1/ t 2 2. Peak TJ = PDM x Z thJC+ T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100
t 1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
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175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
150 Allowable Case Temperature - (C) Average Power Loss - (Watts) 140 DC 130 120 110 Square wave (D = 0.50) 80% Rated VR applied 100 90
see note (2)
180 160 140 120 100 80 60 40 20 120 160 200 240 280 0 0 50 100 150 200 250 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMS Limit DC
80
0
40
80
Average Forward Current - I F(AV) (A)
Average Forward Current - I F(AV) (A)
Fig. 5 - Maximum Allowable Case Temperature Vs. Average Forward Current
(A) 10000
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - I
At Any Rated Load Condition And With Rated VRRM Applied Following Surge
FSM
1000 10
100
1000
10000
Square Wave Pulse Duration - t p (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L HIGH-SPEED SWITCH FREE-WHEEL DIODE 40HFL40S02
+
DUT
IRFP460 Rg = 25 ohm
Vd = 25 Volt
CURRENT MONITOR
Fig. 8 - Unclamped Inductive Test Circuit
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
4
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175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Outline Table
Case Style PowIRtabTM Dimensions in millimeters and (inches)
Case Style PowIRtabTM "J" version Dimensions in millimeters and (inches)
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175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Ordering Information Table
Device Code
175 BGQ 030
1 1 2 3 4 6 2 3
J
4
Current Rating Essential Part Number Voltage code: Code = VRRM none = PowIRtabTM standard J = Short Lead Version
*************************************************** This model has been developed by Wizard SPICE MODEL GENERATOR (1999) ( International Rectifier Corporation ) contains Proprietary Information *************************************************** SPICE Model Diode is composed by a simple diode plus paralled VCG2T ***************************************************
This model
.SUBCKT 175bgq30 ANO CAT D1 ANO 1 DMOD (0.24359) *Define diode model . MODEL DMOD D ( IS=1.3875007809205E-04A, N=1.00125798542747, BV=30V, + IBV=0.160931851779476A,RS= 0.0001656412,CJO=5.05942026644635E-08, +VJ=1.99501834690192,XTI=2,EG=0.711439066978857) ***************************************************** * Implementation of VCG2T VX 1 2 DC 0V R1 2 CAT TRES 1E-6 .MODEL TRES RES (R=1, TC1=4.01799427965033) GP1 ANO CAT VALUE= {-ABS (I(VX)) *(EXP((((-3.827089E-03/ 4.017994)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-1))+1)*0.122401*ABS(V(ANO,CAT)))-1)} ***************************************************** .ENDS 175bgq30 Thermal Model Subcircuit .SUBCKT 175bgq30T 5 1 CTHERM1 CTHERM2 CTHERM3 CTHERM4 RTHERM1 RTHERM2 RTHERM3 RTHERM4 5 4 3 2 5 4 3 2 4 3 2 1 4 3 2 1 1.30E+3 2.87E+2 1.56E+4 2.37E+5 3.13E-2 1.42E-1 6.70E-2 1.72E-4
.ENDS 175bgq30T
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175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/02
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