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LESHAN RADIO COMPANY, LTD.
Dual Series Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
BAS70-04LT1
3
1 2
CASE 318-08, STYLE 11 SOT-23 (TO-236AB) * 70V SCHOTTKY BARRIER DIODES
ANODE 1 CATHODE 2
* Extremely Fast Switching Speed * Low Forward Voltage -- 0.75 Volts (Typ)
@ IF = 10 mAdc
3 CATHODE/ANODE
MAXIMUM RATINGS (TJ = 150C unless otherwise noted)
Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Operating Junction and Storage Temperature Range Symbol VR PF Value 70 225 1.8 TJ, Tstg -55 to +150 Unit Volts mW mW/C C
ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 A) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 50 V) (VR = 70V) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 15 mAdc) Symbol V(BR)R CT IR VF VF VF Min 70 -- -- -- -- -- -- Max -- 2.0 0.1 10 410 750 1.0 Unit Volts pF Adc mVdc mVdc Vdc
BAS70-04LT1-1/2
LESHAN RADIO COMPANY, LTD.
BAS70-04LT1
100
100
IR, REVERSE CURRENT ( A)
10
IF, FORWARD CURRENT (mA)
10
1.0
0.1
1.0
0.01
0.1
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5.0 10 15 20 25 30 35 40 45 50
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Typical Forward Current
Figure 2. Reverse Current Versus Reverse Voltage
1.4
1.2
1.0
CT, CAPACITANCE (pF)
0.8
0.6
0.4
0.2
0 0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Current
BAS70-04LT1-2/2

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