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| LESHAN RADIO COMPANY, LTD. Silicon Variable Capacitance Diode * For UHF and TV/TR tuners * Large capacitance ratio, low series resistance 1 BB 535 1 CATHODE 2 ANODE 2 CASE 477- 02, STYLE 1 SOD- 323 MAXIMUM RATINGS Parameter Diode Reverse Voltage Peak reverse voltage ( R > 5k) Forward Current Operating temperature range Storage temperature Symbol VR V RM IF T op T stg Value 30 35 20 - 55 ~ + 125 - 55 ... + 150 Unit V V mA C C THERMAL RESISTANCE Parameter Junction - ambient Symbol R thJA Value <450 Unit K/W DC CHARACTERISTICS Characteristic Reverse current V R = 30 V, T A = 25 C V R = 30 V, T A = 85 C Symbol IR Min - - Typ - - Max 10 200 Unit nA AC CHARACTERISTICS Diode capacitance V R = 1 V, f = 1 MHz V R = 2 V, f = 1 MHz V R = 25 V, f = 1 MHz V R = 28 V, f = 1 MHz Capacitance ratio V R = 2 V, V R = 25 V, f = 1 MHz Capacitance ratio V R = 1 V, V R = 28 V, f = 1 MHz Capacitance matching V R = 1 ... 28 V, f = 1 MHz Series resistance V R = 3 V, f = 470 MHz Series inductance CT 17.5 14.01 2.05 1.9 C T2 / C T25 6 C T1 / C T28 8.2 C T/ C T - r s pF 18.7 15 2.24 2.1 6.7 8.9 - 0.55 2 20 16.1 2.4 2.3 - 7.5 - 9.8 % 2.5 - - 0.65 - nH Ls S6-1/3 LESHAN RADIO COMPANY, LTD. BB 535 Diode capacitance C T = f ( V R ) f = 1MHz 20 18 16 Temperature coefficient of the diodecapacitance T Cc = f ( V R ) f = 1MHz 10 -1 10 -2 14 C T ( pF ) 12 10 8 6 T Cc ( 1/C ) 10 -3 10 -4 4 2 0 0 5 10 15 20 25 30 10 -5 10 0 10 1 10 2 V R( V ) V R( V ) Normalized diode capacitance C (T A) / C (25C) = f ( T A ), f = 1MHz, V R = Parameter 1.06 10 3 Reverse current I R = f ( T A ), V R = 28V 1.04 1V 1.02 2V C TA / C 25 10 2 25V 1.00 I R ( pA ) 10 1 10 0 -10 0.98 0.96 -30 -10 10 30 50 70 90 110 10 30 50 70 90 100 T A ( C ) T A ( C ) S6-2/3 LESHAN RADIO COMPANY, LTD. BB 535 Reverse current I R = f ( V R ), T A = Parameter 10 3 85C 10 2 I R ( pA ) 25C 10 1 10 0 10 -1 10 0 10 1 10 2 V R( V ) S6-3/3 |
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