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DISCRETE SEMICONDUCTORS
DATA SHEET
BFR94A NPN 3.5 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
DESCRIPTION NPN resistance-stabilized transistor in a SOT122E capstan envelope. It features extremely low cross modulation, intermodulation and second order intermodulation distortion. Due to its high transition frequency, it has a high power gain, in conjunction with good wideband properties, and low noise up to high frequencies. It is primarily intended for CATV and MATV applications. The BFR94A is a replacement for the BFR94. The SOT122E footprint is similar to that of the SOT48, used for the BFR94. PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter
1
C
lfpage
BFR94A
4
3
2
MBB904
Fig.1 SOT122E.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot fT F dim d2 PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency noise figure intermodulation distortion second order intermodulation distortion up to Tc = 145 C; f > 1 MHz Ic = 90 mA; VCE = 20 V; f = 500 MHz; Tj = 25 C Ic = 90 mA; VCE = 20 V; f = 200 MHz; Tamb = 25 C Ic = 90 mA; VCE = 20 V; Vo = 60 dBmV; f(p+q-r) = 194.25 MHz Ic = 90 mA; VCE = 20 V; Vo = 48 dBmV; fp + fq = 210 MHz WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. open emitter open base CONDITIONS TYP. - - - - 3.5 8 -63 - MAX. 30 25 150 3.5 - 10 - -56 UNIT V V mA W GHz dB dB dB
September 1995
2
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VCER VEBO IC ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature f > 1 MHz up to Tc = 145 C; f > 1 MHz open base RBE = 100 open collector CONDITIONS open emitter - - - - - - - -65 - MIN.
BFR94A
MAX. 30 25 35 3 150 300 3.5 200 200
UNIT V V V V mA mA W C C
THERMAL RESISTANCE SYMBOL Rth j-c PARAMETER thermal resistance from junction to case THERMAL RESISTANCE 15 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT PARAMETER collector cut-off current DC current gain transition frequency CONDITIONS IE = 0; VCB = 20 V IC = 50 mA; VCE = 20 V IC = 150 mA; VCE = 20 V IC = 90 mA; VCE = 20 V; f = 500 MHz IC = 150 mA; VCE = 20 V; f = 500 MHz Cc Ce Cre Ccs GUM F collector capacitance emitter capacitance feedback capacitance collector-stud capacitance maximum unilateral power gain (note 1) noise figure IE = ie = 0; VCB = 20 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 1 MHz f = 1 MHz IC = 90 mA; VCE = 20 V; f = 500 MHz; Tamb = 25 C IC = 90 mA; VCE = 20 V; f = 200 MHz; Tamb = 25 C IC = 90 mA; VCE = 20 V; f = 500 MHz; Tamb = 25 C dim d2 Vo Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 ------------------------------------------------------------- dB. G UM = 10 log 2 2 1 - S 11 1 - S 22 2. IC = 90 mA; VCE = 20 V; RL = 75 ; Vp = Vo = 60 dBmV at fp = 196.25 MHz; Vq = Vo -6 dB at fq = 203.25 MHz; Vr = Vo -6 dB at fr = 205.25 MHz; measured at f(p+q-r) = 194.25 MHz. 3. IC = 90 mA; VCE = 20 V; fp = 66 MHz; fq = 144 MHz; fp + fq = 210 MHz; Vo = 48 dBmV. 4. dim = -60 dB (DIN 45004B); Ic = 90 mA; VCE = 20 V; RL = 75 ; Tamb = 25 C; Vp = Vo at dim = -60 dB; fp = 495.25 MHz; Vq = Vo -6 dB; fq = 503.25 MHz; Vr = Vo -6 dB; fr = 505.25 MHz; measured at f(p+q-r) = 493.25 MHz.
2
BFR94A
MIN. - 30 30 - - - - - - - - - - - -
TYP. - - - 3.5 3.5 3.5 12 1.3 2 13.5 8 5 -63 - 700
MAX. 50 - - - - - - - - - 10 - - -56 -
UNIT A
GHz GHz pF pF pF pF dB dB dB dB dB mV
intermodulation distortion second order intermodulation distortion output voltage
note 2 note 3 see Fig.2 and note 4
September 1995
4
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
handbook, halfpage
4
MEA496
fT (GHz)
handbook, halfpage
2.2 nF 2.2 nF VCC L2 1.5 k 240 10 nF L1 10 nF 1 nF DUT 1 19
MEA497
3
VBB
2 75
75
0 10
10 2
I C (mA)
10 3
L1 = L2 = 5 H Ferroxcube choke, catalogue number 3122 108 20153.
VCE = 20 V; f = 500 MHz; Tj = 25 C.
Fig.2 Intermodulation distortion MATV test circuit.
Fig.3
Transition frequency as a function of collector current.
MEA495
MEA494
handbook, halfpage
30
d im (dB)
handbook, halfpage
30
d2 (dB)
40
40
50
50
60
60
70
70
80
0
50
100
I C (mA)
150
80
0
50
100
I C (mA)
150
Measured in CATV test circuit. VCE = 20 V; Vo = 60 dBmV; f(p+q-r) = 194. 25 MHz.
Measured in CATV test circuit. VCE = 20 V; Vo = 48 dBmV; f = 210 MHz.
Fig.4
Intermodulation distortion as a function of collector current.
Fig.5
Second order intermodulation distortion as a function of collector current.
September 1995
5
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
handbook, full pagewidth
1 0.5 2
0.2
1000 MHz 800
5 10
+j 0 -j 0.2 0.5 500 10 200 0.2 100 5 1 2 5 10
0.5 1
2
MEA498
IC = 90 mA; VCE = 20 V; Tamb = 25 C. Zo = 50 .
Fig.6 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90 120 60
100 MHz 150 200 30
500 180 20 10 800 1000 0
+ -
150
30
120 90 IC = 90 mA; VCE = 20 V; Tamb = 25 C.
60
MEA900
Fig.7 Common emitter forward transmission coefficient (S21).
September 1995
6
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
handbook, full pagewidth
90 120 60
150 800 500 200 180 0.3 0.2 0.1 100 1000 MHz
30
+
0
-
150
30
120 90 IC = 90 mA; VCE = 20 V; Tamb = 25 C.
60
MEA901
Fig.8 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
1 0.5 2
0.2
5 10
+j 0 -j 1000 500 0.2 200 100 MHz 5 10 0.2 0.5 1 2 5 10
0.5 1 IC = 90 mA; VCE = 20 V; Tamb = 25 C. Zo = 50 .
2
MEA499
Fig.9 Common emitter output reflection coefficient (S22).
September 1995
7
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
BFR94A
SOT122E
D ceramic BeO A Q N1 D1 N2 N D2 A w1 M A M W metal c
N3 M1
X H b2 b
detail X
L
4
3 H 1
C
b1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.80 b 1.05 0.73 b1 b2 c D 7.50 7.23 D1 6.46 6.25 D2 H L M 3.18 2.92 M1 N N1 max. N2 8.89 7.36 N3 3.68 2.92 Q 3.38 2.79 W w1
90
10.75 14.25 0.18 10.43 13.94 0.14
7.19 27.56 6.84 6.93 25.78 5.30
1.63 11.82 1.02 1.42 11.04
8-32 0.381 UNC
OUTLINE VERSION SOT122E
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
September 1995
8
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFR94A
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1995
9

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