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| MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-HB * * * * * IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 80 20 20 20 E2B2 3-M5 B2 E2 4 18 34 13 C1 4 C2E1 2- 6.5 20 4 E2 C1 B1E1 C2E1 E2 7 16 4 20 Tab#110, t=0.5 6.5 E1 B1 31 LABEL (8) 22.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 30 30 250 1.8 300 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=30A, IB=40mA -IC=30A (diode forward voltage) IC=30A, VCE=2.5V Min. -- -- -- -- -- -- 750 -- VCC=300V, IC=30A, IB1=60mA, IB2=-0.6A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 60 2.5 3.0 1.8 -- 2.0 8.0 3.0 0.5 2.0 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 Tj=25C 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C COLLECTOR CURRENT IC (A) 60 IB=0.5A A IB=200m DC CURRENT GAIN hFE 80 VCE=5.0V 40 IB=100mA VCE=2.5V IB=20mA 20 IB=10mA 0 0 1 2 3 4 5 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 2.2 2.6 3.0 3.4 3.8 4.2 VCE=2.5V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 BASE CURRENT IB (A) VBE(sat) BASE-EMITTER VOLTAGE VBE (V) SATURATION VOLTAGE 10 0 VCE(sat) 7 5 4 3 IB=40mA 2 Tj=25C Tj=125C -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 Tj=25C Tj=125C SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 ts tf 3 IC=30A 2 IC=10A IC=20A SWITCHING TIME ton, ts, tf (s) 1 VCC=300V IB1=60mA IB2=-0.6A ton Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 10 -1 10 0 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 REVERSE BIAS SAFE OPERATING AREA 80 ts, tf (s) ts tf COLLECTOR CURRENT IC (A) 70 60 50 40 30 20 10 Tj=125C IB2=-0.6A SWITCHING TIME IB2=-3.0A VCC=300V IB1=60mA IC=30A Tj=25C Tj=125C 2 3 4 5 7 10 0 10 -1 2 3 4 5 7 10 1 0 0 100 200 300 400 500 600 700 800 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 100 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 10 0 50 0 S 10 0 7 5 3 TC=25C 2 NON-REPETITIVE 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 7 10 2 0.5 0.4 D C S 1m S 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) Zth (j-c) (C/ W) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 0.3 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 10 0 0.4 0.8 1.2 1.6 Tj=25C Tj=125C 2.0 2.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 500 400 Irr (A), Qrr (c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 10 2 7 VCC=300V 5 IB1=60mA 3 IB2=-0.6A 2 10 1 7 5 3 2 Irr 10 1 trr (s) FORWARD CURRENT IF (A) Feb.1999 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 0 Qrr 10 0 7 5 3 trr Tj=25C 2 Tj=125C -1 10 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 2.0 1.6 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) |
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