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| SI6954ADQ New Product Vishay Siliconix N-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.053 @ VGS = 10 V 0.075 @ VGS = 4.5 V ID (A) 3.4 2.9 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 SI6954ADQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 3.4 2.7 20 0.83 1.0 0.96 Steady State Unit V 3.1 2.5 A 0.69 0.83 0.53 -55 to 150 _C W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71130 S-00013--Rev. A, 24-Jan-00 www.siliconix.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 90 126 65 Maximum 125 150 80 Unit _C/W 1 SI6954ADQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 3.4 A VGS = 4.5 V, ID = 2.9 A VDS = 15 V, ID = 3.4 A IS = 0.83 A, VGS = 0 V 20 0.044 0.062 10 0.8 1.2 0.053 0.075 S V 1 100 1 10 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.83 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 10 V RG = 6 W A V, VDS = 10 V, VGS = 10 V ID = 3.4 A V V, 34 8 1.4 1.2 12 10 23 8 25 20 20 45 15 40 ns 16 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 5 V 16 4V I D - Drain Current (A) 12 I D - Drain Current (A) 12 16 20 Transfer Characteristics 8 8 4 3V 4 TC = 125_C 25_C -55_C 0 0 1 2 3 4 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.siliconix.com S FaxBack 408-970-5600 2 Document Number: 71130 S-00013--Rev. A, 24-Jan-00 SI6954ADQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.15 r DS(on) - On-Resistance ( W ) 600 Vishay Siliconix Capacitance C - Capacitance (pF) 0.12 500 Ciss 400 0.09 VGS = 4.5 V 0.06 300 VGS = 10 V 200 Coss 100 Crss 0 6 12 18 24 30 0.03 0 0 4 8 12 16 20 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 3.4 A 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.4 A r DS(on) - On-Resistance (W) (Normalized) 4 6 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 2 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.15 On-Resistance vs. Gate-to-Source Voltage 0.12 0.09 ID = 3.4 A 0.06 TJ = 25_C 0.03 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Document Number: 71130 S-00013--Rev. A, 24-Jan-00 www.siliconix.com S FaxBack 408-970-5600 3 SI6954ADQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 30 25 ID = 250 mA -0.0 Power (W) 20 Single Pulse Power, Junction-to-Ambient 0.2 V GS(th) Variance (V) -0.2 15 -0.4 10 -0.6 5 -0.8 -50 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 126_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.siliconix.com S FaxBack 408-970-5600 4 Document Number: 71130 S-00013--Rev. A, 24-Jan-00 |
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