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| S amHop Microelectronics C orp. S T S 2300 MAR . 10 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 3.8A R DS (ON) S uper high dense cell design for low R DS (ON). 40 @ V G S = 4.5V 60 @ V G S = 2.5V 75 @ V G S = 1.8V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S AB S OL UTE MAXIMUM R ATING (TA=25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 20 10 3.8 15 1.25 1.25 -55 to 150 Unit V V A A A W C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R thJA 100 C /W 1 S T S 2300 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) VGS = 0V, ID = 250uA VDS = 20V, VGS =0V VGS = 10V, VDS = 0V VDS = VGS, ID = 250uA VGS = 4.5V, ID =5.0A VGS = 2.5V, ID =4.0A VGS = 1.8V, ID =1.0A On-S tate Drain Current Forward Transconductance ID(ON) g FS c S ymbol Condition Min Typ C Max Unit 20 1 100 0.6 0.78 1.5 32 50 62 18 5 888 144 115 40 60 75 V uA nA V m-ohm m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance VDS = 5V, VGS = 4.5V VDS = 5V, ID = 5A A S DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance CISS COSS CRSS c VDS = 15V, VGS = 0V f =1.0MHZ PF PF PF S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGS = 4.5V, R L = 10 ohm R GE N = 6 ohm VDS = 10V, ID = 3.5A, VGS = 4.5V 31.8 14.5 50.3 31.9 16.8 2.5 5.4 ns ns ns ns nC nC nC 2 S T S 2300 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =1.25A Min Typ Max Unit 0.825 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 10 V G S =10.5~2.5V 25 25 C 20 -55 C 8 ID, Drain C urrent(A) ID, Drain C urrent (A) T j=125 C 15 6 4 2 0 V G S =1.5V 10 5 0 0.0 0 1 2 3 4 5 6 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics R DS (ON), On-R es is tance(Ohms ) 2.2 1.8 1.4 1.0 0.6 0.2 0 F igure 2. Trans fer C haracteris tics V G S =4.5V ID=5A 1000 C , C apacitance (pF ) 800 C is s 600 400 200 0 C os s C rs s 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T S 2300 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 30 F igure 6. B reakdown V oltage V ariation with T emperature 20 gFS , T rans conductance (S ) 20 15 10 5 0 0 5 10 15 V DS =5V 20 25 Is , S ource-drain current (A) 25 10 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 25 ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 V G S , G ate to S ource V oltage (V ) 20 15 10 5 0 0 VDS =10V ID=3.5A 10 R (O DS N) L im it 10 10 0m s ms 11 DC 1s 0.1 0.03 VGS =4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 5 10 15 20 25 30 35 40 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T S 2300 V DD ton V IN D VG S R GE N G 90% 5 toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit 10 F igure 12. S witching Waveforms Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 on 0.1 0.1 0.05 0.02 1. 2. 3. 4. t2 0.01 0.00001 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T S 2300 A L G F M J B C I H E D (TYP .) 2. 70 2. 40 1. 40 0. 35 0 3. 10 2. 80 1. 60 0. 50 0. 10 0. 55 1. 30 0. 20 1. 15 10X 0. 106 0. 094 0. 055 0. 014 0 0. 122 0. 110 0. 063 0. 020 0. 004 F G 0. 45 1. 90 R F. E 1. 00 0. 10 0. 40 0. 45 0X 0. 022 0. 018 0. 075 R EF. 0. 039 0. 004 0. 016 0. 033 0X 0. 051 0. 008 0. 045 10X I J L M 6 S T S 2300 SOT-23 Tape and Reel Data SOT-23 Carrier Tape UNIT:P PACKAGE SOT-23 A0 3.20 O 0.10 B0 3.00 O 0.10 K0 1.33 O 0.10 D0 i 1.00 +0.25 D1 i 1.50 +0.10 E 8.00 +0.30 -0.10 E1 1.75 O 0.10 E2 3.50 O 0.05 P0 4.00 O 0.10 P1 4.00 O 0.10 P2 2.00 O 0.05 T 0.20 O 0.02 SOT-23 Reel UNIT:P TAPE SIZE 8P REEL SIZE i 178 M i 178 O 1 N i 60 O 1 W 9.00 O 0.5 W1 12.00 O 0.5 H i 13.5 O 0.5 K 10.5 S 2.00 O 0.5 G i 10.0 R 5.00 V 18.00 7 |
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