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APL502J
500V 52A 0.090
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec).
G
S D
S
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
* Higher FBSOA
* Popular SOT-227 Package
G
D
* Higher Power Dissipation
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
S
All Ratings: TC = 25C unless otherwise specified.
APL502J UNIT Volts Amps
500 52 208 30 40 568 4.55 -55 to 150 300 52 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 52 0.09 25
(VDS > I D(ON) x R DS(ON) Max, VGS = 12V)
2
Drain-Source On-State Resistance
(VGS = 12V, 26A)
Ohms A
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
250 100 2 4
nA
8-2003 050-5897 Rev B
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = 52A @ 25C RG = 0.6 MIN TYP MAX
APL502J
UNIT
7600 1280 620 13 24 58 14
9000 1810 930 26 48 87 17
ns pF
THERMAL CHARACTERISTICS
Symbol Characteristic RJC RJA Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
.22 40 2500 10
Volts lb*in
VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations.
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.22mH, R = 25, Peak I = 52A j G L
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
ZJC, THERMAL IMPEDANCE (C/W)
0.20
0.9
0.7 0.15 0.5 0.10 0.3
t2
Note:
PDM t1
0.05 0.1 0 10-5 0.05 10-4 SINGLE PULSE
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
RC MODEL Junction temp. ( "C) 0.0520 0.0261F
10
Power (Watts)
0.155
0.423F
8-2003
0.0126 Case temperature
67.451F
050-5897 Rev B
FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL
Typical Performance Curves
120
ID, DRAIN CURRENT (AMPERES)
APL502J
120 VGS=10, 15V
ID, DRAIN CURRENT (AMPERES)
VGS=10V, 15 V
100 8V 80 7.5 V 60 40 7V 6.5 V 6V 5.5 V 0
100 8V 80 7.5 V 60 7V 40 20 0 6.5 V 6V 5.5 V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW OUTPUT CHARACTERISTICS 1.30
NORMALIZED TO = 10V @ 26A V
GS
20
80
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH OUTPUT CHARACTERISTICS
1.20 1.10 VGS=10V
60
40
1.00
0.90 VGS=20V
20
TJ = +125C TJ = -55C TJ = +25C
0.80 0.70
0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
0
20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
60
ID, DRAIN CURRENT (AMPERES)
1.15
50
1.10
40
1.05
30 20
1.00
10 0
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
0.90 -50
0 50 100 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
050-5897 Rev B
8-2003
Typical Performance Curves
2.5
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
I V
D
APL502J
1.2
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
= 26A = 12V
GS
2.0
1.1 1.0 0.9
1.5
1.0
0.8 0.7 0.6 -50 -25
0.5
0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 208 100
OPERATION HERE LIMITED BY RDS (ON)
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 30,000 100S
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
50
10,000 5,000
Ciss
10 5
1mS 10mS 100mS
Coss 1,000 500 Crss
1 TC =+25C TJ =+150C SINGLE PULSE .1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
DC Line 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193)
8-2003
1.95 (.077) 2.14 (.084)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
38.0 (1.496) 38.2 (1.504)
* Source Dimensions in Millimeters and (Inches)
Gate
050-5897 Rev B
ISOTOP(R) is a Registered Trademark of SGS Thomson.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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