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TYPICAL PERFORMANCE CURVES (R)
APT15GT60BRDQ1 APT15GT60BRDQ1G*
APT15GT60BRDQ1(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Thunderbolt IGBT(R)
The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * RBSOA and SCSOA Rated * High Freq. Switching to 150KHz * Ultra Low Leakage Current
G
TO -2 47
C
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT15GT60BRDQ1(G) UNIT Volts
600 30 42 20 45 45A @ 600V 184 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500A) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) MIN TYP MAX Units
600 3 1.6 4 2.0 2.8 50
2
5 2.5
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES
A nA
12-2005 052-6284 Rev A
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
1500 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT15GT60BRDQ1(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 15A TJ = 150C, R G = 10, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V RG = 10 I C = 15A VGE = 15V MIN TYP MAX UNIT pF V nC
830 120 50 7.5 75 6 34 45 6 8 105 55 150 195 215 6 8 125 100 150 325 325 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V RG = 10 I C = 15A
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.68 1.35 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6284
Rev A
12-2005
TYPICAL PERFORMANCE CURVES
45 40 IC, COLLECTOR CURRENT (A) 35 30 25 20 15 10 5 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
V
GE
= 15V
100 90 IC, COLLECTOR CURRENT (A)
APT15GT60BRDQ1(G)
15V
TJ = -55C
80 70 60 50 40 30 20 10 0
13V
TJ = 25C TJ = 125C
10V 9V 8V 7V
6V
45 40 IC, COLLECTOR CURRENT (A) 35 30 25 20 15 10
FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 15A C T = 25C
J
0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
TJ = -55C
VCE = 120V VCE = 300V
8 6 4 2 0 0 10 20 30 40 50 60 GATE CHARGE (nC) FIGURE 4, Gate Charge 70 80
VCE = 480V
TJ = 25C TJ = 125C
5 0 0
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
IC = 30A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 25
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 30A
IC = 15A
IC = 15A
IC = 7.5A
IC = 7.5A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
0
6
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 60
IC, DC COLLECTOR CURRENT(A)
1.10 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.05 1.00 0.95 0.90 0.85 0.80 0.75
50 40 30 20 10 0 -50 12-2005 052-6284 Rev A
0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
10 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
160 140 120 100 80 60 40
V = 400V 20 RCE= 10 G VGE =15V,TJ=125C
APT15GT60BRDQ1(G)
8 VGE = 15V 6
4
VGE =15V,TJ=25C
2 VCE = 400V
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
30 25 20
TJ = 25 or 125C,VGE = 15V RG = 10, L = 100H, VCE = 400V
0
TJ = 25C, or 125C RG = 10 L = 100H
0
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
250
RG = 10, L = 100H, VCE = 400V
0
L = 100H
0
200 tf, FALL TIME (ns)
TJ = 125C, VGE = 15V
tr, RISE TIME (ns)
150
15 10 5 0
100
50
TJ = 25C, VGE = 15V
0 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
1000 EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 10
G
0 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
600 500 400 300 200 100 0
V = 400V CE V = +15V GE R = 10
G
0
800
TJ = 125C
TJ = 125C
600
400
TJ = 25C
200
TJ = 25C
0 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
1200 SWITCHING ENERGY LOSSES (J) 1000 800
Eoff,30A
V = 400V CE V = +15V GE T = 125C
J
0
0 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
1000
V = 400V CE V = +15V GE R = 10
G
Eon2,30A
SWITCHING ENERGY LOSSES (J)
Eon2,30A
800
600
Eoff,30A Eoff,15A
600
Eon2,15A
400
12-2005
400 200 0
Eoff,7.5A Eon2,7.5A
Eoff,15A
200
Eon2,15A Eon2,7.5A
Eoff,7.5A
Rev A
052-6284
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
TYPICAL PERFORMANCE CURVES
2,000 1,000 C, CAPACITANCE ( F) 500 IC, COLLECTOR CURRENT (A) Cies
50 45 40 35 30 25 20 15 10 5
APT15GT60BRDQ1(G)
P
100 50
Coes Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.3 SINGLE PULSE D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.7
0.5
Note:
PDM
t1 t2
0.1 0.05 10-5 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
180 FMAX, OPERATING FREQUENCY (kHz)
100
50
TJ (C)
0.243 Dissipated Power (Watts) 0.0013 0.00675 0.0969 0.165
TC (C)
0.271
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = 400V CE R = 10
G
F
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
ZEXT
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5 10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
0
052-6284
Rev A
12-2005
APT15GT60BRDQ1(G)
APT15DQ60
10%
Gate Voltage TJ = 125C
V CC
IC
V CE
td(on) tr Collector Current 90% 5% Collector Voltage
A D.U.T.
Switching Energy
10%
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) tf 90% Collector Voltage
TJ = 125C
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6284
Rev A
12-2005
TYPICAL PERFORMANCE CURVES
APT15GT60BRDQ1(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 129C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 15A Forward Voltage IF = 30A IF = 15A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT15GT60BRDQ1(G) UNIT Amps
15 30 110
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.0 2.5 1.5
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.40 ZJC, THERMAL IMPEDANCE (C/W) 1.20 1.00 0.80 0.60 0.40 0.20 0 0.3 D = 0.9
15 19 21 2 105 250 5 55 420 15 -
IF = 15A, diF/dt = -200A/s VR = 400V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 15A, diF/dt = -200A/s VR = 400V, TC = 125C
IF = 15A, diF/dt = -1000A/s VR = 400V, TC = 125C
0.7
0.5
Note:
PDM
t1 t2
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
0.583 Dissipated Power (Watts) 0.0022 0.060
TC (C)
0.767
ZEXT
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6284
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Rev A
12-2005
60 50 IF, FORWARD CURRENT (A) TJ = 175C 40 30 20 10 0 TJ = 125C trr, REVERSE RECOVERY TIME (ns)
140 120 30A 100 80 60 40 20 0 15A
APT15GT60BRDQ1(G)
T =125C J V =400V
R
7.5A
TJ = -55C 0
TJ = 25C
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage
T =125C J V =400V
R
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change 25 IRRM, REVERSE RECOVERY CURRENT (A)
T =125C J V =400V
R
700 Qrr, REVERSE RECOVERY CHARGE (nC) 600 500 400 300 200 100 0
30A
20
30A
15
15A
10
15A 7.5A
7.5A
5
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 35 30 25
Duty cycle = 0.5 T =175C
J
0
1.2
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
1.0 0.8 IRRM 0.6 trr 0.4 0.2 0.0 Qrr
trr
Qrr
IF(AV) (A)
20 15 10 5
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
90
CJ, JUNCTION CAPACITANCE (pF)
80 70 60 50 40 30 20 10
10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
Rev A
12-2005
0
1
052-6284
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT6017LLL
APT15GT60BRDQ1(G)
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6284
Dimensions in Millimeters and (Inches)
Rev A
Gate Collector (Cathode) Emitter (Anode)
12-2005
19.81 (.780) 20.32 (.800)

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